Structure of uniform and high-quality Al-doped ZnO films by magnetron sputter deposition at low temperatures

2018 ◽  
Vol 665 ◽  
pp. 109-116 ◽  
Author(s):  
Fanping Meng ◽  
Shou Peng ◽  
Genbao Xu ◽  
Yun Wang ◽  
Fangfang Ge ◽  
...  
1992 ◽  
Vol 258 ◽  
Author(s):  
A. Nuruddin ◽  
J. R. Doyle ◽  
J. R. Abelson

ABSTRACTUsing a “macro-trench” technique, the surface reaction probabilities β of the a-Si:H growth precursors for remote hollow cathode silane discharge (HC) and reactive magnetron sputter deposition (RMS) are measured. Both deposition methods produce state of the art photo-electronic quality a-Si:H. For the HC case, β= 0.28 ± 0.05, whereas for RMS deposition β ≈ 0.97 ± 0.05. We conclude that β is not universally correlated with film quality, and discuss mitigating factors present in RMS deposition that permit high quality film to be deposited despite the high film precursor reactivity.


1991 ◽  
Vol 137-138 ◽  
pp. 783-786 ◽  
Author(s):  
Alan M. Myers ◽  
James R. Doyle ◽  
G. Jeff Feng ◽  
Nagi Maley ◽  
David L. Ruzic ◽  
...  

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