Effects of electron beam irradiation on a Ag/AsS2 bilayer using conductive atomic force microscopy

2021 ◽  
pp. 138747
Author(s):  
Jānis Sniķeris ◽  
Vjaceslavs Gerbreders
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

Iron related precipitates in multicrystalline silicon by conductive atomic force microscopy

2021 ◽  
Vol 129 ◽  
pp. 105789
Author(s):  
Pierpaolo Vecchi ◽  
Giovanni Armaroli ◽  
Marisa Di Sabatino ◽  
Daniela Cavalcoli
Keyword(s):  
Atomic Force Microscopy ◽  
Multicrystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

2015 ◽  
Vol 54 (5S) ◽  
pp. 05EB02 ◽  
Author(s):  
Li Zhang ◽  
Masayuki Katagiri ◽  
Taishi Ishikura ◽  
Makoto Wada ◽  
Hisao Miyazaki ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force

Switching of nanosized filaments in NiO by conductive atomic force microscopy

2012 ◽  
Vol 112 (6) ◽  
pp. 064310 ◽  
Author(s):  
F. Nardi ◽  
D. Deleruyelle ◽  
S. Spiga ◽  
C. Muller ◽  
B. Bouteille ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

A Novel Cell Co-Culture Method Utilizing Thermo-Responsive Surface

2007 ◽  
Vol 342-343 ◽  
pp. 221-224
Author(s):  
Jin Suk Bae ◽  
Ga Young Jun ◽  
Akihiko Kikuchi ◽  
Teruo Okano ◽  
Chang Hyun Ahn ◽  
...  
Keyword(s):  
Contact Angle ◽  
Electron Spectroscopy ◽  
Electron Beam Irradiation ◽  
Culture Method ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Beam Irradiation ◽  
Cover Glass ◽  
Force Microscopy ◽  
Atomic Force

In this work, we developed a novel patterned co-culture method with thermo-responsive poly(N-isopropylacrylamide) (PIPAAm) and poly(N-ρ-vinylbenzyl-Ο-β-D-galactopyranosyl-(1→ 4)-D-gluconamide) (PVLA) inducing active hepatocyte attachment. Patterned graft of PIPAAm onto PS dishes was carried out by electron beam irradiation using cover-glass as a photomask. PVLA was only coated onto PIPAAm-ungrafted domain because of hydrated hydrophilic property of PIPAAm at below the LCST. Analysis by attenuated total reflection-Fourier transform infrared and electron spectroscopy for chemical analysis revealed that PIPAAm and PVLA were successfully grafted and coated on surfaces of PS dishes. PIPAAm-grafted surface exhibited decreasing contact angle by changing temperature from 37 to 20°C, while PVLA-coated PS and non-treated PS had negligible contact angle changes with temperature alternation. Atomic force microscopy (AFM) results showed that PIPAAm-grafted and PVLA-coated PS had smoother surfaces than that of ungrafted PS dishes. After culture for 12 hours, hepatocytes were well attached on PVLA-coated domain. Hepatocytes adherent on PIPAAm-grafted domain were detached by decreasing temperature. And then, fibroblasts were seeded onto PIPAAm pattern-grafted domain. Fibroblasts were only attached and spread onto PIPAAm-grafted domain. Co-cultured hepatocytes showed better differentiated function of albumin expression compared to homotypic hepatocyte culture

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