Physical and Electrical Characteristics of Ho2O3 Thin Film Based on 4H-SiC Wide Bandgap Semiconductor

2021 ◽  
pp. 138997
Author(s):  
Kazeem Olabisi Odesanya ◽  
Tahsin Ahmed Mozaffor Onik ◽  
Roslina Ahmad ◽  
Andri Andriyana ◽  
S. Ramesh ◽  
...  
Keyword(s):  
Thin Film ◽  
Wide Bandgap ◽  
Electrical Characteristics ◽  
Wide Bandgap Semiconductor

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

scholarly journals Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Sensors ◽  
2006 ◽  
Vol 6 (6) ◽  
pp. 643-666 ◽  
Author(s):  
Byoung Kang ◽  
Hung-Ta Wang ◽  
Li- Chia Tien ◽  
Fan Ren ◽  
Brent Gila ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Sensors ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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