Combining high temperature sample preparation and in-situ magnetic fields in XPEEM

2020 ◽  
Vol 214 ◽  
pp. 113010
Author(s):  
Anna Mandziak ◽  
Juan de la Figuera ◽  
Jose Emilio Prieto ◽  
Jordi Prat ◽  
Michael Foerster ◽  
...  
Keyword(s):  
High Temperature ◽  
Magnetic Fields ◽  
Sample Preparation ◽  
Temperature Sample

Design of a compact and versatile radiation heater with an additively manufactured Nb radiation shield for UHV high-temperature sample preparation

2021 ◽  
Vol 92 (2) ◽  
pp. 025111
Author(s):  
T. Schmidt ◽  
D. Schlander ◽  
V. Jüchter ◽  
J. Baranyai ◽  
F. Neuberger ◽  
...  
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Radiation Shield ◽  
Temperature Sample

Sample Preparation of Aluminum Bridge Test Vehicles for Tem In-Situ Crystallographic Studies of Electromigration

1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Circuit Reliability ◽  
Test Vehicle ◽  
Aluminum Films ◽  
Current Densities ◽  
Integrated Circuit Reliability ◽  
A Current

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.

scholarly journals High temperature sample environment upgrade of ISIS engineering materials in-situ diffraction experiment

2019 ◽  
Vol 68 (13) ◽  
pp. 132901
Author(s):  
Xia Zhan ◽  
Kelleher Joe ◽  
Jian-Bo Gao ◽  
Yan-Ling Ma ◽  
Ming-Qiang Chu ◽  
...  
Keyword(s):  
High Temperature ◽  
Diffraction Experiment ◽  
Engineering Materials ◽  
Temperature Sample ◽  
Sample Environment

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

Tuning the Magnetic Alignment of Cellulose Nanocrystals from Perpendicular to Parallel Using Lepidocrocite Nanoparticles

2019 ◽  
Author(s):  
Valentina Guccini ◽  
Sugam Kumar ◽  
Yulia Trushkina ◽  
Gergely Nagy ◽  
Christina Schütz ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Cellulose Nanocrystals ◽  
Small Angle Neutron Scattering ◽  
Lower Amount ◽  
Magnetic Alignment ◽  
Polarized Optical Microscopy ◽  
Parallel Orientation ◽  
Weak Magnetic Fields

The magnetic alignment of cellulose nanocrystals (CNC) and lepidocrocite nanorods (LpN), pristine and in hybrid suspensions has been investigated using contrast-matched small-angle neutron scattering (SANS) under in situ magnetic fields (0 – 6.8 T) and polarized optical microscopy. The pristine CNC (diamagnetic) and pristine LpN (paramagnetic) align perpendicular and parallel to the direction of field, respectively. The alignment of both the nanoparticles in their hybrid suspensions depends on the relative amount of the two components (CNC and LpN) and strength of the applied magnetic field. In the presence of 10 wt% LpN and fields < 1.0 T, the CNC align parallel to the field. In the hybrid containing lower amount of LpN (1 wt%), the ordering of CNC is partially frustrated in all range of magnetic field. At the same time, the LpN shows both perpendicular and parallel orientation, in the presence of CNC. This study highlights that the natural perpendicular ordering of CNC can be switched to parallel by weak magnetic fields and the incorporation of paramagnetic nanoparticle as LpN, as well it gives a method to influence the orientation of LpN.<br>

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

In-Situ Mechanical Sample Preparation of Selected Sites and Components on Large Modules and Boards

2016 ◽  
Author(s):  
Jim Colvin ◽  
Timothy Hazeldine ◽  
Heenal Patel
Keyword(s):  
Sample Preparation ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Tilt Table ◽  
Standard Requirement ◽  
Open Design ◽  
Bga Packages ◽  
Silicon Thickness ◽  
Board Level

Abstract The standard requirement for FA Engineers needing to remove components from a board, prior to decapsulation or sample preparation, is shown to be greatly reduced, by the methods discussed here. By using a mechanical selected area preparation system with an open-design it is possible to reach all required areas of a large printed circuit board (PCB) or module to prepare a single component ‘in situ’. This makes subsequent optical or electrical testing faster and often more convenient to accomplish. Electronic End-pointing and 3D curvature compensation methods can often be used in parallel with sample prep techniques to further improve the consistency and efficacy of the decapsulation and thinning uniformity and final remaining silicon thickness (RST). Board level prep eliminates the worry of rework removal of BGA packages and the subsequent risk of damage to the device. Since the entire board is mounted, the contamination is restricted to the die surface and can be kept from the underside ball connections unlike current liquid immersion methods of package thinning or delayering. Since the camera is in line with the abrasion interface, imaging is real time during the entire milling and thinning process. Recent advances in automated tilt-table design have meant that a specific component’s angular orientation can be optimized for sample preparation. Improved tilt table technology also allows for improved mounting capability for boards of many types and sizes. The paper describes methods for decapsulation, thinning and backside polishing of a part ‘in situ’ on the polishing machine and allows the system to operate as a probe station for monitoring electrical characteristics while thinning. Considerations for designing board-level workholders are described – for boards that that are populated with components on one or even both sides. Using the techniques described, the quality of sample preparation and control is on a par with the processing of single package-level devices.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

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