Order of magnitude enhancement of inherently selective atomic layer deposition of zirconia on silicon without deposition on copper: The role of precursor

Vacuum ◽  
2021 ◽  
pp. 110686
Author(s):  
Soumya Saha ◽  
Gregory Jursich ◽  
Abhijit H. Phakatkar ◽  
Tolou Shokuhfar ◽  
Christos G. Takoudis
2021 ◽  
Author(s):  
Matthias Marcus Minjauw ◽  
Ji-Yu Feng ◽  
Timo Sajavaara ◽  
Christophe Detavernier ◽  
Jolien Dendooven

In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts...


2019 ◽  
Vol 35 (7) ◽  
pp. 720-731 ◽  
Author(s):  
Jonathan Guerrero-Sánchez ◽  
Bo Chen ◽  
Noboru Takeuchi ◽  
Francisco Zaera

Abstract


2020 ◽  
Vol 1004 ◽  
pp. 547-553
Author(s):  
A.B. Renz ◽  
Oliver J. Vavasour ◽  
Peter M. Gammon ◽  
Fan Li ◽  
Tian Dai ◽  
...  

A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O), inert (Ar) and reducing (H2:N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour. Electrical characterisation results show that the forming gas treatment at 1100°C reduces the flatband voltage to 0.23 V from 10 V for as-deposited SiO2 layers. The density of interface traps (DIT) was also reduced by one order of magnitude to 2×1011 cm-2 eV-1 at EC-ET = 0.2 eV. As an indicator of the improvement, characterisation by x-ray photoelectron spectroscopy (XPS) showed that silicon enrichment present in as-deposited layers was largely reduced by the forming gas anneal, improving the stoichiometry. Time-dependent dielectric breakdown (TDDB) results showed that the majority of forming gas annealed samples broke down at breakdown fields of 12.5 MV × cm-1, which is about 2.5 MV × cm-1 higher than for thermally oxidised samples.


Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1496 ◽  
Author(s):  
Dominik Benz ◽  
Hao Van Bui ◽  
Hubertus T. Hintzen ◽  
Michiel T. Kreutzer ◽  
J. Ruud van Ommen

Photocatalysts for water purification typically lack efficiency for practical applications. Here we present a multi-component (Pt:SiO2:TiO2(P25)) material that was designed using knowledge of reaction mechanisms of mono-modified catalysts (SiO2:TiO2, and Pt:TiO2) combined with the potential of atomic layer deposition (ALD). The deposition of ultrathin SiO2 layers on TiO2 nanoparticles, applying ALD in a fluidized bed reactor, demonstrated in earlier studies their beneficial effects for the photocatalytic degradation of organic pollutants due to more acidic surface Si–OH groups which benefit the generation of hydroxyl radicals. Furthermore, our investigation on the role of Pt on TiO2(P25), as an improved photocatalyst, demonstrated that suppression of charge recombination by oxygen adsorbed on the Pt particles, reacting with the separated electrons to superoxide radicals, acts as an important factor for the catalytic improvement. Combining both materials into the resulting Pt:SiO2:TiO2(P25) nanopowder exceeded the dye degradation performance of both the individual SiO2:TiO2(P25) (1.5 fold) and Pt:TiO2(P25) (4-fold) catalysts by 6-fold as compared to TiO2(P25). This approach thus shows that by understanding the individual materials’ behavior and using ALD as an appropriate deposition technique enabling control on the nano-scale, new materials can be designed and developed, further improving the photocatalytic activity. Our research demonstrates that ALD is an attractive technology to synthesize multicomponent catalysts in a precise and scalable way.


Author(s):  
Mohammad Alwazzan ◽  
Karim Egab ◽  
Pengtao Wang ◽  
Zeyu Shang ◽  
Xinhua Liang ◽  
...  

2019 ◽  
Vol 11 (29) ◽  
pp. 26277-26287 ◽  
Author(s):  
Jakob Kuhs ◽  
Andreas Werbrouck ◽  
Natalia Zawacka ◽  
Emile Drijvers ◽  
Philippe F. Smet ◽  
...  

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