Uniform formation process of self-organized InAs quantum dots

2002 ◽  
Vol 237-239 ◽  
pp. 1301-1306 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Toshiyuki Kaizu ◽  
Kunihiko Yujobo ◽  
Yoshikuni Saito
2003 ◽  
Vol 794 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.


2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy

1999 ◽  
Vol 197 (1-2) ◽  
pp. 372-375 ◽  
Author(s):  
Haijun Zhu ◽  
Zhiming Wang ◽  
Hui Wang ◽  
Liqiu Cui ◽  
Songlin Feng

2000 ◽  
Vol 29 (9) ◽  
pp. 1110-1110
Author(s):  
Shigeru Kohmoto ◽  
Hitoshi Nakamura ◽  
Tomonori Ishikawa ◽  
Kiyoshi Asakawa

1999 ◽  
Vol 201-202 ◽  
pp. 1202-1204 ◽  
Author(s):  
A.Yu. Egorov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
M.V. Maksimov ◽  
...  

2007 ◽  
Vol 204 (9) ◽  
pp. 3121-3125
Author(s):  
Chang-Sik Son ◽  
Mustuo Ogura ◽  
Yun Mo Sung ◽  
Si Jong Leem ◽  
Tae Geun Kim

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