Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
◽
pp. 1228-1231
◽
Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231
2018 ◽
Vol 31
(3)
◽
pp. 20
2016 ◽
Vol 100
◽
pp. 468-473
◽
Keyword(s):
2019 ◽
Vol 7
(3)
◽
pp. 1045-1054
◽
2018 ◽
Vol 88
◽
pp. 239-249
◽
Keyword(s):
2012 ◽
Vol 36
(1)
◽
pp. 97-107
◽