Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates

2000 ◽  
Vol 116 (3) ◽  
pp. 163-166 ◽  
Author(s):  
T.W Kim ◽  
S.Y Han ◽  
H.L Park
Keyword(s):  
Space Charge ◽  
Temperature Coefficient ◽  
Doping Concentration ◽  
Ge Doping

On the role of Ge-doping concentration in the refractive index rollover and thermal annealing characteristics of type IIa fiber Bragg gratings

2014 ◽  
Vol 53 (11) ◽  
pp. 117103
Author(s):  
Jitendra Kumar ◽  
Om Prakash ◽  
Ramakant Mahakud ◽  
Sachin Kumar Agrawal ◽  
Sudhir K. Dixit ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Annealing ◽  
Doping Concentration ◽  
Fiber Bragg Gratings ◽  
Bragg Gratings ◽  
Ge Doping

scholarly journals Thermal neutron transmutation doping of GaN semiconductors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
R. Barber ◽  
Q. Nguyen ◽  
J. Brockman ◽  
J. Gahl ◽  
J. Kwon
Keyword(s):  
Doping Concentration ◽  
Gamma Ray ◽  
High Quality ◽  
Neutron Transmutation Doping ◽  
Transmutation Doping ◽  
Sims Analysis ◽  
Neutron Transmutation ◽  
First Time ◽  
Ge Doping ◽  
Uniform Doping

Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

2011 ◽  
Vol 178-179 ◽  
pp. 347-352 ◽  
Author(s):  
Aurimas Uleckas ◽  
Eugenijus Gaubas ◽  
Joan Marc Rafi ◽  
Jiahe Chen ◽  
De Ren Yang ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Carrier Lifetime ◽  
Isothermal Annealing ◽  
Defect Formation ◽  
Si Substrates ◽  
Thermal Donor ◽  
Donor Formation ◽  
Radiation Treatments ◽  
Lifetime Studies ◽  
Ge Doping

Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.

Electron holography of interfaces in electroceramics

1993 ◽  
Vol 51 ◽  
pp. 1088-1089
Author(s):  
Vinayak P. Dravid ◽  
V. Ravikumar ◽  
Richard Plass
Keyword(s):  
Space Charge ◽  
Direct Evidence ◽  
Materials Science ◽  
Theoretical Work ◽  
Electron Holography ◽  
Resolution Limit ◽  
Interference Phenomenon ◽  
X Ray ◽  
Electron Sources ◽  
Science Community

With the advent of coherent electron sources with cold field emission guns (cFEGs), it has become possible to utilize the coherent interference phenomenon and perform “practical” electron holography. Historically, holography was envisioned to extent the resolution limit by compensating coherent aberrations. Indeed such work has been done with reasonable success in a few laboratories around the world. However, it is the ability of electron holography to map electrical and magnetic fields which has caught considerable attention of materials science community.There has been considerable theoretical work on formation of space charge on surfaces and internal interfaces. In particular, formation and nature of space charge have important implications for the performance of numerous electroceramics which derive their useful properties from electrically active grain boundaries. Bonnell and coworkers, in their elegant STM experiments provided the direct evidence for GB space charge and its sign, while Chiang et al. used the indirect but powerful technique of x-ray microchemical profiling across GBs to infer the nature of space charge.

Sign in / Sign up

Export Citation Format

Share Document