Use of SEM CL spectra to determine local variations in Ge doping concentration in LEC InP ingots

2020 ◽  
pp. 321-326
Author(s):  
C A Warwick ◽  
G R Booker
Keyword(s):  
Doping Concentration ◽  
Ge Doping

On the role of Ge-doping concentration in the refractive index rollover and thermal annealing characteristics of type IIa fiber Bragg gratings

2014 ◽  
Vol 53 (11) ◽  
pp. 117103
Author(s):  
Jitendra Kumar ◽  
Om Prakash ◽  
Ramakant Mahakud ◽  
Sachin Kumar Agrawal ◽  
Sudhir K. Dixit ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Annealing ◽  
Doping Concentration ◽  
Fiber Bragg Gratings ◽  
Bragg Gratings ◽  
Ge Doping

scholarly journals Thermal neutron transmutation doping of GaN semiconductors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
R. Barber ◽  
Q. Nguyen ◽  
J. Brockman ◽  
J. Gahl ◽  
J. Kwon
Keyword(s):  
Doping Concentration ◽  
Gamma Ray ◽  
High Quality ◽  
Neutron Transmutation Doping ◽  
Transmutation Doping ◽  
Sims Analysis ◽  
Neutron Transmutation ◽  
First Time ◽  
Ge Doping ◽  
Uniform Doping

Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

2011 ◽  
Vol 178-179 ◽  
pp. 347-352 ◽  
Author(s):  
Aurimas Uleckas ◽  
Eugenijus Gaubas ◽  
Joan Marc Rafi ◽  
Jiahe Chen ◽  
De Ren Yang ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Carrier Lifetime ◽  
Isothermal Annealing ◽  
Defect Formation ◽  
Si Substrates ◽  
Thermal Donor ◽  
Donor Formation ◽  
Radiation Treatments ◽  
Lifetime Studies ◽  
Ge Doping

Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Impact of co-doping concentration in copolymer network liquid crystals

2019 ◽  
Vol 46 (10) ◽  
pp. 1485-1493 ◽  
Author(s):  
Fatemeh Jahanbakhsh ◽  
Alexander Lorenz
Keyword(s):  
Liquid Crystals ◽  
Doping Concentration ◽  
Co Doping ◽  
Copolymer Network

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

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