Characterization of titanium nitride (TiN) films on various substrates using spectrophotometry, beam profile reflectometry, beam profile ellipsometry and spectroscopic beam profile ellipsometry

ABSTRACTTitanium (Ti) and titanium nitride (TiN) films are widely used as barrier stack to prevent junction spiking. It is also an important material for an anti-reflection coating (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. Secondary Ion Mass Spectrometry (SIMS) is proven to be very powerful analytical technique for the semiconductor materials. However, quantitative analysis of very thin structures using SIMS constitutes an ultimate challenge since a large fraction of the profile is located in the transient region where a stable concentration of primary beam species has not been established.This paper reports a SIMS technique for advanced characterization of very thin titanium and titanium nitride layers. Improvements in depth resolution were achieved by reducing the angle of incidence and the impact energy maintaining enhanced ionization yield associated with oxygen bombardment. Significant improvements in characterization of the film surface were developed by using oxygen flooding technique. Optimized oxygen pressure was used to achieve a stable ion yield due to the complete surface oxidation of titanium and titanium nitride layers during the analysis. The method was employed in the SIMS characterization of multiple Ti/TiN films deposited on silicon substrate. The example presents dramatic enhancement in depth resolution due to minimized matrix related ion yield variations at the interfaces.

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Characterization of Iron Doped Titanium Nitride Thin Films Prepared by Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.47-50.1093 ◽

2008 ◽

Vol 47-50 ◽

pp. 1093-1096

Author(s):

Wen Song Lin ◽

Jing Chen ◽

Ji Zhou

Keyword(s):

Magnetron Sputtering ◽

Titanium Nitride ◽

Electric Resistance ◽

X Ray Diffraction ◽

Ferromagnetic Property ◽

Tin Films ◽

Glass Substrates ◽

Iron Doped ◽

Deposited Films

Iron-doped titanium nitride films deposed on glass substrates were prepared by magnetron sputtering technique. X-ray diffraction (XRD) was employed to analyze the phases existed in the films. Investigations have shown that as-deposited films were XRD-amorphous, and the TiN phase was formed in the film after additional annealing. It was found that iron-doped TiN films preserved the same crystal structure as TiN. The ferromagnetic properties of iron doped TiN films have been measured using vibrating sample magnetometer (VSM), and the electric resistances of the films were also determined by IR four-probe methods. The experiment results proved that the iron-doped TiN films possessed ferromagnetic property with low electric resistance at room temperature. It was investigated that the saturation magnetization was about 2.21×108 A/m, the coercivity about 23 kA/m, and the electric resisitivity 1.401×10-6 3•m for typical Fe-doped-TiN-films sample.

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Characterization of Titanium Nitride Coatings Deposited by Metal Plasma Ion Pre-Implantation and Cathodic Arc Evaporation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2009.c102 ◽

2009 ◽

Vol 9 (2) ◽

pp. 1127-1132 ◽

Cited By ~ 1

Author(s):

Ko-Wei Weng ◽

Ya-Chi Chen ◽

Tai-Nan Lin ◽

Da-Yun Wang

Keyword(s):

Titanium Nitride ◽

Metal Plasma ◽

Nitride Coatings ◽

Cathodic Arc Evaporation ◽

Arc Evaporation ◽

Cathodic Arc

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Mechanical characterization of reactively magnetron-sputtered TiN films

Surface and Coatings Technology ◽

10.1016/s0257-8972(03)00711-4 ◽

2003 ◽

Vol 174-175 ◽

pp. 375-382 ◽

Cited By ~ 40

Author(s):

F Vaz ◽

P Machado ◽

L Rebouta ◽

P Cerqueira ◽

Ph Goudeau ◽

...

Keyword(s):

Mechanical Characterization ◽

Tin Films

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ChemInform Abstract: Characterization of TiN Films Prepared by Electron Shower, Arc Ion- Plating and Sputtering Methods.

ChemInform ◽

10.1002/chin.199547308 ◽

2010 ◽

Vol 26 (47) ◽

pp. no-no

Author(s):

H. YUMOTO ◽

K. KANEKO ◽

M. ISHIHARA ◽

K. AKASI ◽

T. KANEKO

Keyword(s):

Arc Ion Plating ◽

Tin Films ◽

Ion Plating ◽

Abstract Characterization ◽

Electron Shower

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Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

Scientific Reports ◽

10.1038/s41598-019-51236-3 ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 8

Author(s):

Chun-Chieh Chang ◽

John Nogan ◽

Zu-Po Yang ◽

Wilton J. M. Kort-Kamp ◽

Willard Ross ◽

...

Keyword(s):

Titanium Nitride ◽

Room Temperature ◽

Atomic Layer ◽

Deposition Process ◽

Attractive Alternative ◽

Tin Films ◽

Periodic Arrays ◽

Alternative Material ◽

Tin Thin Films ◽

Temperature Deposition

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.

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