Effect of DC voltage on the microstructure and electrical properties of stabilized-zirconia1

1997 ◽  
Vol 99 (1-2) ◽  
pp. 143-151 ◽  
Author(s):  
Xin Guo
Keyword(s):  
Electrical Properties ◽  
Dc Voltage

scholarly journals Corrugated Photoactive Thin Films for Flexible Strain Sensor

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1970 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Tensile Strain ◽  
Strain Sensor ◽  
Strain Sensors ◽  
Optical And Electrical Properties ◽  
Strain Sensing ◽  
Dc Voltage ◽  
Flexible Strain Sensor

In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.

Polarity Effect and Dielectric Breakdown of Composite Ferroelectric Films as the Dielectric for Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 598-603 ◽  
Author(s):  
Wei Qiang Wang ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Film ◽  
Ferroelectric Films ◽  
Dc Voltage ◽  
Voltage Polarity ◽  
Voltage Frequency

In this paper, we study the electrical properties and breakdown phenomena of BaTiO3/Teflon composite ferroelectric thin film in electrowetting systems. The experimental results showed that the electrowetting effect and the breakdown voltage depend on DC voltage polarity, and this polarity dependence is closely related to the thickness of the ferroelectric film. Under AC voltages, the breakdown voltage increased directly with voltage frequency. These results are useful for designing reliable EWOD devices with low operation voltages and high robustness.

scholarly journals Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage

2017 ◽  
Vol 122 (24) ◽  
pp. 244101 ◽  
Author(s):  
T. J. M. Bayer ◽  
J. J. Carter ◽  
Jian-Jun Wang ◽  
Andreas Klein ◽  
Long-Qing Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ionic Conductors ◽  
Dc Voltage

Electrical Properties of Nanocomposite Fibers Under Various Loads and Temperatures

2009 ◽  
Author(s):  
W. Khan ◽  
R. Asmatulu ◽  
M. M. El-Tabey ◽  
J. Ho ◽  
H. Hamdeh
Keyword(s):  
Carbon Nanotube ◽  
Electrical Properties ◽  
Electrical Resistance ◽  
Mechanical Load ◽  
Charge Carriers ◽  
Dc Voltage ◽  
Polarization Effects ◽  
Pump Speed ◽  
Electrospinning Method ◽  
Nanocomposite Fibers

Multi-wall carbon nanotube (MWCNT) based nanocomposite fibers were fabricated using electrospinning method, and their electrical properties were investigated under various loads and temperatures. MWCNTs were initially dispersed into polyvinylpyrrolidone (PVP) and electrospun at various spinning conditions, including DC voltage, pump speed, concentration and distance. When the mechanical load was applied to a film of PVP nanocomposite fibers, the contact resistance, separation between sites and jumping distance of the charge carriers were gradually reduced, thus likely enhancing the electrical conduction. Additionally, as the temperature increased from 20 to 90 °C, the electrical resistance drastically decreased. These behaviors may be a consequence of conductivity and polarization effects of the nanoscale inclusions in the fibers.

scholarly journals Electric degradation in PZT piezoelectric ceramics under a DC bias

2020 ◽  
Vol 27 (1) ◽  
pp. 464-468
Author(s):  
Jing Zhang ◽  
Pinghua Pan ◽  
Ping Jiang ◽  
Jie Qin ◽  
Jiansong Hu
Keyword(s):  
Electrical Properties ◽  
Service Life ◽  
Degradation Rate ◽  
Piezoelectric Ceramics ◽  
Degradation Process ◽  
Ion Transfer ◽  
Pzt Ceramics ◽  
Dc Voltage ◽  
Surrounding Environment ◽  
Dc Bias

AbstractIn order to accurately evaluate the service life and failure mechanism of the PZT piezoelectric ceramics, the electric degradation process of the PZT ceramics with and sans doping under a DC voltage of 380V, in a surrounding environment of 90∘C and 85% RH has been investigated using a self-made device. The experimental results show that the degradation rate of the pure PZT ceramic is lower than that of ceramics with doping in the same condition. Furthermore, the electrical properties of the ceramics tend to decrease during the electric degradation. The doping increases the defects of ceramics, resulting in that the silver ion transfer from the anode to the cathode under the continuous DC bias, which can further form a metal band, increasing the conductivity, but deteriorating the service life.

scholarly journals Corrugated Photoactive Thin Films for Flexible Strain Sensor

2018 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Tensile Strain ◽  
Strain Sensor ◽  
Strain Effect ◽  
Optical And Electrical Properties ◽  
Strain Sensing ◽  
Dc Voltage ◽  
Flexible Strain Sensor

In this study, a flexible strain sensor is devised using corrugated poly(3-hexylthiophene) (P3HT) thin film. In the previous studies, the P3HT-based photoactive thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to relatively more brittle thin film constituent—poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS) conductive thin film as a bottom electrode. To address this issue, it is aimed to design mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to optimize design of the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS thin film affect the optical and electrical properties. Also, pre-strain effect on light absorptivity of the corrugated P3HT-based thin films was studied. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and DC voltage strain sensing capability was validated. As a result, flexible strain sensor exhibited tensile strain sensing range up to 5% at frequency up to 15 Hz with maximum gage factor ~7.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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