The Palladium Alumina System: Influence Of The Preparation Procedures On The Structure Of The Metallic Phase

1983 ◽  
pp. 463-471 ◽  
Author(s):  
S. Vasudevan ◽  
J. Cosyns ◽  
E. Lesage ◽  
E. Freund ◽  
H. Dexpert
Keyword(s):  
Metallic Phase

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Metallic phase stabilization and phase diagram of (ET)3(HSO4)2

1991 ◽  
Vol 1 (10) ◽  
pp. 1365-1370 ◽  
Author(s):  
N. D. Kush ◽  
V. N. Laukhin ◽  
A. I. Schegolev ◽  
E. B. Yagubskii ◽  
E. Yu. Alikberova ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Metallic Phase ◽  
Phase Stabilization

DEGREE OF VALENCE MIXING IN THE METALLIC PHASE OF SmS AND IN TmSe

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-267-C4-270 ◽  
Author(s):  
B. BATLOGG ◽  
A. SCHLEGEL ◽  
P. WACHTER
Keyword(s):  
Metallic Phase ◽  
Valence Mixing

Thermally stable fishnet-like 1T-MoS2/CNTs heterostructures with improved electrode performance

2020 ◽  
Author(s):  
Zhendong Lei ◽  
Xue Yu ◽  
Jing Zhan ◽  
Yong Zhang
Keyword(s):  
Energy Storage ◽  
Molybdenum Disulfide ◽  
Metallic Phase ◽  
Thermally Stable ◽  
Electrode Performance ◽  
Energy Storage Applications

1T-MoS2 is the metallic phase of molybdenum disulfide (MoS2), which has obvious advantages in energy storage applications compared with the 2H phase. However, the 1T phase is inherently unstable and...

scholarly journals Robust anomalous metallic states and vestiges of self-duality in two-dimensional granular In-InOx composites

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Xinyang Zhang ◽  
Bar Hen ◽  
Alexander Palevski ◽  
Aharon Kapitulnik
Keyword(s):  
Magnetic Field ◽  
Metallic Phase ◽  
Broadband Noise ◽  
Two Dimensional ◽  
Conventional Theory ◽  
Logarithmic Divergence ◽  
Self Duality ◽  
Low Field ◽  
Wide Range ◽  
Low Temperature Resistance

AbstractMany experiments investigating magnetic-field tuned superconductor-insulator transition (H-SIT) often exhibit low-temperature resistance saturation, which is interpreted as an anomalous metallic phase emerging from a ‘failed superconductor’, thus challenging conventional theory. Here we study a random granular array of indium islands grown on a gateable layer of indium-oxide. By tuning the intergrain couplings, we reveal a wide range of magnetic fields where resistance saturation is observed, under conditions of careful electromagnetic filtering and within a wide range of linear response. Exposure to external broadband noise or microwave radiation is shown to strengthen the tendency of superconductivity, where at low field a global superconducting phase is restored. Increasing magnetic field unveils an ‘avoided H-SIT’ that exhibits granularity-induced logarithmic divergence of the resistance/conductance above/below that transition, pointing to possible vestiges of the original emergent duality observed in a true H-SIT. We conclude that anomalous metallic phase is intimately associated with inherent inhomogeneities, exhibiting robust behavior at attainable temperatures for strongly granular two-dimensional systems.

STRUCTURAL AND ELECTRONIC PROPERTIES OF THE Li/Si(001) SURFACE

1996 ◽  
Vol 03 (03) ◽  
pp. 1487-1494
Author(s):  
J.W. CHUNG
Keyword(s):  
Electronic Properties ◽  
Binding Sites ◽  
Room Temperature ◽  
Structural Models ◽  
Metallic Phase ◽  
Surface Band ◽  
Ordered Structures ◽  
Initial Stage ◽  
Structural And Electronic Properties ◽  
Characteristic Features

Atomic arrangements and electronic properties of the Li-adsorbed Si(001) surface are briefly reviewed. Characteristic features of a series of ordered structures with increasing Li coverage at room temperature are described. Structural models invoking a dimer flipping mechanism are discussed for the first two ordered structures, (2×2)-Li and (2×1)-Li, which are proposed as reconstructions of the silicon substrate. It is shown that the metallic phase found at an initial stage of adsorption is a result of substrate metallization, which explains the presence of an intraband surface plasmon. The features of the surface band structures for the first two ordered structures are discussed in terms of variation of the binding sites with coverage. All the unique features of the Li/Si(001) surface essentially exhibit the size effects of Li.

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