STRUCTURAL AND ELECTRONIC PROPERTIES OF THE Li/Si(001) SURFACE

1996 ◽  
Vol 03 (03) ◽  
pp. 1487-1494
Author(s):  
J.W. CHUNG
Keyword(s):  
Electronic Properties ◽  
Binding Sites ◽  
Room Temperature ◽  
Structural Models ◽  
Metallic Phase ◽  
Surface Band ◽  
Ordered Structures ◽  
Initial Stage ◽  
Structural And Electronic Properties ◽  
Characteristic Features

Atomic arrangements and electronic properties of the Li-adsorbed Si(001) surface are briefly reviewed. Characteristic features of a series of ordered structures with increasing Li coverage at room temperature are described. Structural models invoking a dimer flipping mechanism are discussed for the first two ordered structures, (2×2)-Li and (2×1)-Li, which are proposed as reconstructions of the silicon substrate. It is shown that the metallic phase found at an initial stage of adsorption is a result of substrate metallization, which explains the presence of an intraband surface plasmon. The features of the surface band structures for the first two ordered structures are discussed in terms of variation of the binding sites with coverage. All the unique features of the Li/Si(001) surface essentially exhibit the size effects of Li.

Structural and Electronic Properties of the Iron(II) and Nickel(II) Bis(ligand) Complexes of 6-(5-Methyl-1,2,4-oxadiazol-3-yl)-2,2′-bipyridine— a Terpyridine-Based Tridentate

1999 ◽  
Vol 52 (7) ◽  
pp. 673 ◽  
Author(s):  
Bradley J. Childs ◽  
Marcia L. Scudder ◽  
Donald C. Craig ◽  
Harold A. Goodwin
Keyword(s):  
Electronic Properties ◽  
Spectroscopic Data ◽  
Room Temperature ◽  
Spin Transition ◽  
Iron Complex ◽  
Ligand Field ◽  
Monoclinic Space Group ◽  
Space Group ◽  
C 23 ◽  
Structural And Electronic Properties

Iron(II) and nickel(II) bis(ligand) complexes of 6-(5-methyl-1,2,4-oxadiazol-3-yl)-2,2′-bipyridine (L) are described. The ligand field in the iron complex is close to that at the singlet ( 1 A1) ? quintet ( 5 T2) crossover and magnetic and Mössbauer spectral evidence indicates that a spin transition occurs in salts of the iron complex but is centred above room temperature. The structures of [FeL2] [CF3SO3]2.CH3CN and [NiL2] [BF4]2.CH3CN were determined and both are very similar to the structures of the corresponding terpyridine complexes. Spectroscopic data indicate that for the iron complex π-interaction between the metal and the ligand is less than that in the terpyridine system. [FeL2] [CF3SO3]2.CH3CN is monoclinic, space group P 21/c; a 8 . 232(5), b 25 . 273(10), c 17 . 306(10) Å, β 92 . 37(3)°, Z 4; [NiL2] [BF4]2.CH3CN is monoclinic, space group P 21/c; a 8 . 136(2), b 17 . 558(2), c 23 . 783(7) Å, β 109 . 32(1)°, Z 4.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
High Performance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Structural And Electronic Properties

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

Towards an electronic grade nanoparticle-assembled silicon thin film by ballistic deposition at room temperature: the deposition method, and structural and electronic properties

2017 ◽  
Vol 5 (15) ◽  
pp. 3725-3735 ◽  
Author(s):  
Giorgio Nava ◽  
Francesco Fumagalli ◽  
Salvatore Gambino ◽  
Isabella Farella ◽  
Giorgio Dell'Erba ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electronic Properties ◽  
High Throughput ◽  
Room Temperature ◽  
Plasma Synthesis ◽  
Deposition Method ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Structural And Electronic Properties

High-throughput plasma synthesis of highly crystalline nanoparticle-assembled silicon thin films.

Pressure Dependence of the Structural and Electronic Properties of Organic Superconductors

1989 ◽  
Vol 173 ◽  
Author(s):  
D. Chasseau ◽  
J. Gaultier ◽  
H. Houbib ◽  
M. Rahal ◽  
L. Ducasse ◽  
...  
Keyword(s):  
Bulk Modulus ◽  
Electronic Properties ◽  
Pressure Dependence ◽  
Pressure Range ◽  
Room Temperature ◽  
Organic Superconductors ◽  
Cell Parameters ◽  
Transfer Integrals ◽  
Structural And Electronic Properties ◽  
Experimental Pressure

ABSTRACTThe pressure dependence (≤12 × 102 MPa) of the cell parameters of (TMTSF)2 - C104 and κ - (BEDT-TTF)2 - Cu(NCS)2 has been measured at room temperature. The magnitudes of the principal compressibilities calculated and the bulk modulus (B) do not vary all over the experimental pressure range for (TMTSF)2 - C104, while ki decrease slightly for κ - (ET)2 - Cu(NCS)2 and its Dulk modulus strongly increases. The directions of the principal compressibilities strongly varywith pressure for the former salt; in the latter case, the projections of the directions of the smallest and of the largest principal compressibilities remain parallel and perpendicular to the long molecular axis respectively whereas the intermediate is along the monoclinic b axis.The crystal structures have been refined at 4 × 102 ,6 × 102 and 9.5 × 102 MPa (R = 0.05) for (TMTSF)2 - C104 and at 7 × 102 MPa (R = 0.095) for κ - (ET)2 - Cu(NCS)2. The transfer integrals have been calculated for the two compounds. In (TMTSF)2 - C104, both normal and transverse overlaps strongly increase with pressure; the dimerization is reduced under pressure and the two largest transverse interactions become identical. In κ - (ET)2 - Cu(NCS)2, the intra-dimer interaction strongly increases whereas the variations of the inter-dimer interactions may be very different.

scholarly journals Structural and Electronic Properties of GaN (0001)/α-Al2O3(0001) Interface

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
M. B. Pereira ◽  
E. M. Diniz ◽  
S. Guerini
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Formation Energy ◽  
Structural Models ◽  
Interface Region ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structural And Electronic Properties ◽  
Strong Hybridization ◽  
Α Al2o3

Structural and electronic properties of the interface betweenα-Al2O3(0001) and GaN (0001) surfaces are investigated throughab initiocalculations within the density functional theory. Two different structural models have been investigated interface N(Ga)-terminated. The interface N-terminated GaN surface seems to exhibit the lowest formation energy. The studied interface models are metallic, with the levels at energy spatially confined in the interface region. Our calculations show strong hybridization between atoms in the interface region.

First-Principles Study of Structural and Electronic Properties of MoS1.5Se0.5 Alloy

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940006
Author(s):  
J. Gusakova ◽  
B. K. Tay ◽  
V. Gusakov
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Room Temperature ◽  
Band Gaps ◽  
Monomolecular Layer ◽  
Optical Band Gaps ◽  
First Principles Study ◽  
Structural And Electronic Properties ◽  
Probable Distribution ◽  
Good Agreement

The effects of relative positions of Se atoms in a monomolecular layer of MoS[Formula: see text]Se[Formula: see text] have been studied. It is demonstrated that the distribution of Se atoms between top and bottom chalcogen planes is most energetically favorable. For a more probable distribution of Se atoms this monolayer alloy is a direct semiconductor with the fundamental bandgap of 2.35[Formula: see text]eV. We have also evaluated the optical band gaps of the alloy at 77[Formula: see text]K (1.86[Formula: see text]eV) and room temperature (1.80[Formula: see text]eV), which are in a good agreement with the experimentally measured bandgap of 1.79[Formula: see text]eV.

Structural and Electronic Properties of Bis[2-(pyrazin-2-ylamino)-4-(pyridin-2-yl)thiazolato]iron(II) and Its Solvated Derivatives

1994 ◽  
Vol 47 (5) ◽  
pp. 891 ◽  
Author(s):  
BJ Childs ◽  
DC Craig ◽  
KA Ross ◽  
ML Scudder ◽  
HA Goodwin
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Singlet State ◽  
Methanol Solution ◽  
Monoclinic Space Group ◽  
Deprotonated Form ◽  
Complex Molecules ◽  
Quintet State ◽  
Structural And Electronic Properties ◽  
Continuous Temperature

The uncharged complex [Fe( pzapt )2] [ pzapt is the deprotonated form of 2-(pyrazin-2-ylamino)-4-(pyridin-2-yl) thiazole ] crystallizes with varying degrees of solvation , depending on the solvent. The electronic properties of the solvates differ. For all of them temperature dependence of the magnetic moment is observed, associated with a continuous temperature-induced singlet (1A1) ↔ quintet (5T2) transition. The transition is centred below room temperature for the benzene solvates but the unsolvated and chloroform solvate complexes exist predominantly in a singlet low-spin state. Overall the stabilization of the singlet state is greater in this system than in the previously studied [Fe( papt )2] [ paptH = 2-(pyridin-2-ylamino)-4-(pyridin-2-yl) thiazole ]. A spin equilibrium has been characterized for both [Fe( pzapt )2] and [Fe( papt )2] in methanol solution. The crystal structure of [Fe( pzapt )2].3/2C6H6 reveals Fe-N bond lengths consistent with both singlet and quintet state iron(II) being present. The benzene molecules are incorporated into the lattice as groups of three by occupying channels created by the packing of the complex molecules. Bis [2-(pyrazin-2-ylamino)-4-(pyridin-2-yl) thiazole ]iron(II) sesquibenzene solvate: monoclinic, space group P 21/c, a 14.894(7), b 12.601(2), c 16.777(8) Ǻ, β 94.57(2)°, Z 4.

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

Sign in / Sign up

Export Citation Format

Share Document