Electron beam facility in polymer research: radiation induced functionalization of polytetrafluoroethylene

Author(s):  
H Dorschner ◽  
U Lappan ◽  
K Lunkwitz
1997 ◽  
Vol 2 (1) ◽  
Author(s):  
A. K. Pikaev ◽  
S. A. Kabakchi ◽  
A. V. Putilov ◽  
L. I. Kaipov ◽  
B. M. Vanyushkin

AbstractThe paper is a review of the results obtained in our laboratories from the study on the mechanism and technology of combined electron-beam and biological purification of industrial wastewater from non-biodegradable hard surfactants. They are a mixture of isomeric isobutylnaphthalene sulfonates which is known as nekal and is utilized as an emulsifier in the production of synthetic rubber, for example, at the Voronezh plant in Russia. The electron irradiation is used for the conversion of nekal to biodegradable products by the removal of alkyl or sulfonate groups from the molecule (with the formation of naphthalene sulfonate, alkyl naphthalenes and naphthalene). Different experimental techniques were applied to elucidate the mechanism of the respective radiation-induced processes. For example, it was found by pulse radiolysis that


2015 ◽  
Vol 17 (16) ◽  
pp. 11053-11061 ◽  
Author(s):  
Apurav Guleria ◽  
Ajay K Singh ◽  
Soumyakanti Adhikari

The optical properties of electron beam irradiated RTILs revealed significant changes in the molecular rearrangements and realignment of bonding interactions. This study could be useful for comprehensively understanding the radiation driven effects in the ILs.


1989 ◽  
Vol 148 ◽  
Author(s):  
C. W. Nieh ◽  
T. L. Lin ◽  
R. W. Fathauer

ABSTRACTWe report electron-radiation-induced epitaxial growth of CoSi2 on Si(111) from an amorphous Co/Si 1:2 mixture with epitaxial CoSi2 nuclei. Under the electron beam of a Philips EM430 electron microscope, the epitaxial nuclei grow parallel to the surface with a growth rate orders of magnitude higher than that for thermally activated growth. The substrate temperature during irradiation and the electron energy dependence were studied. Electron-radiation-induced growth shows very weak temperature dependence in the temperatures between 100°K and 300°K and the activation energy is 0.03 eV. The growth rate increases significantly as the electron energy increased to 200 KeV which is about the threshold energy for displacing Si atoms.


1998 ◽  
Vol 520 ◽  
Author(s):  
O.L. Khasanov ◽  
Yu.P. Pokholkov ◽  
A.L. Bondarenko ◽  
V.P. Krivobokov

ABSTRACTThe mechanisms of radiation-induced desorption (RID) from the nanodispersed powder (NDP) surface under the impulse excitation of heavy-current electron beam (HCEB) were studied. Electron-induced desorption (EID); temperature-induced desorption (TID) as a result of radiation heating of the adsorbent; radiation-induced diffusion of the adsorbed atoms; re-adsorption were considered.It was shown that radiation-induced desorption was observed during the first two pulses. The main mechanism of this process was electron-induced desorption (EID).


2013 ◽  
Vol 41 (12) ◽  
pp. 3520-3525 ◽  
Author(s):  
Rachelle Hanna ◽  
Thierry Paulmier ◽  
Philippe Molinie ◽  
Mohamed Belhaj ◽  
Bernard Dirassen ◽  
...  

2016 ◽  
Vol 2 (1) ◽  
pp. 1247607
Author(s):  
Yogish Somayaji T ◽  
Vidya V ◽  
Vishakh R ◽  
Jayarama Shetty ◽  
Alex John Peter ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7523
Author(s):  
Daniel Söderström ◽  
Heikki Kettunen ◽  
Adriana Morana ◽  
Arto Javanainen ◽  
Youcef Ouerdane ◽  
...  

Radiation-induced emission of doped sol-gel silica glass samples was investigated under a pulsed 20-MeV electron beam. The studied samples were drawn rods doped with cerium, copper, or gadolinium ions, which were connected to multimode pure-silica core fibers to transport the induced luminescence from the irradiation area to a signal readout system. The luminescence pulses in the samples induced by the electron bunches were studied as a function of deposited dose per electron bunch. All the investigated samples were found to have a linear response in terms of luminescence as a function of electron bunch sizes between 10−5 Gy/bunch and 1.5×10−2 Gy/bunch. The presented results show that these types of doped silica rods can be used for monitoring a pulsed electron beam, as well as to evaluate the dose deposited by the individual electron bunches. The electron accelerator used in the experiment was a medical type used for radiation therapy treatments, and these silica rod samples show high potential for dosimetry in radiotherapy contexts.


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