Nucleation and growth of diamond films on single crystal and polycrystalline tungsten substrates

2000 ◽  
Vol 9 (3-6) ◽  
pp. 262-268 ◽  
Author(s):  
Michael D. Whitfield ◽  
James A. Savage ◽  
Richard B. Jackman
Keyword(s):  
Single Crystal ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Polycrystalline Tungsten

Field ion microscope investigations of atomic processes at surfaces

1989 ◽  
Vol 47 ◽  
pp. 228-229
Author(s):  
G. L. Kellogg ◽  
P. R. Schwoebel
Keyword(s):  
Single Crystal ◽  
Crystal Surface ◽  
Linear Chain ◽  
Atom Probe ◽  
Nucleation And Growth ◽  
Single Atom ◽  
Initial Structure ◽  
Atomic Processes ◽  
Single Crystal Surfaces ◽  
Field Ion Microscope

Although no longer unique in its ability to resolve individual single atoms on surfaces, the field ion microscope remains a powerful tool for the quantitative characterization of atomic processes on single-crystal surfaces. Investigations of single-atom surface diffusion, adatom-adatom interactions, surface reconstructions, cluster nucleation and growth, and a variety of surface chemical reactions have provided new insights to the atomic nature of surfaces. Moreover, the ability to determine the chemical identity of selected atoms seen in the field ion microscope image by atom-probe mass spectroscopy has increased or even changed our understanding of solid-state-reaction processes such as ordering, clustering, precipitation and segregation in alloys. This presentation focuses on the operational principles of the field-ion microscope and atom-probe mass spectrometer and some very recent applications of the field ion microscope to the nucleation and growth of metal clusters on metal surfaces.The structure assumed by clusters of atoms on a single-crystal surface yields fundamental information on the adatom-adatom interactions important in crystal growth. It was discovered in previous investigations with the field ion microscope that, contrary to intuition, the initial structure of clusters of Pt, Pd, Ir and Ni atoms on W(110) is a linear chain oriented in the <111> direction of the substrate.

Polycrystalline Diamond Films and Single Crystal Diamonds Grown by Combustion Synthesis

CIRP Annals ◽  
1990 ◽  
Vol 39 (1) ◽  
pp. 585-588 ◽  
Author(s):  
R. Komanduri ◽  
L.L. Fehrenbacher ◽  
L.M. Hanssen ◽  
A. Morrish ◽  
K.A. Snail ◽  
...  
Keyword(s):  
Single Crystal ◽  
Combustion Synthesis ◽  
Diamond Films ◽  
Polycrystalline Diamond

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Single Crystal CVD Diamond Nuclear Detectors

2006 ◽  
Vol 48 ◽  
pp. 103-112 ◽  
Author(s):  
Claudio Manfredotti
Keyword(s):  
Single Crystal ◽  
Time Derivative ◽  
Diamond Films ◽  
Radiation Detectors ◽  
Cvd Diamond ◽  
High Energy ◽  
Neutron Spectrometry ◽  
Free Standing ◽  
Wide Range ◽  
Nuclear Detectors

CVD diamond films have reached in recent years superlative improvements in their “ detector grade “ quality, with a time derivative which was never registered for other similar frontier materials. The basic properties of high quality CVD diamond films make them very interesting for a wide range of radiation detectors : they provide fast signals with very low leakage currents, they are very radiation resistant, they have excellent thermal properties and they can be manufactured as free-standing detectors. The recent availability of single crystal CVD diamond samples of extreme good quality, suitable thickness and surface area has opened new application fields in nuclear detection and dosimetry, such as, for instance, hadron therapy and neutron spectrometry in fusion reactors. At the same time, strip and pixel detectors of unprecedented performances have been successfully realized and exploited in the framework of high energy physics experiments. The paper will review the more recent history of CVD diamond nuclear detectors with respect to material quality, with a particular emphasis on epitaxial single crystals diamond, and the achievements in terms of applications in some different fields.

Diamond nucleation on nickel substrates seeded with non-diamond carbon

1994 ◽  
Vol 9 (5) ◽  
pp. 1063-1066 ◽  
Author(s):  
P.C. Yang ◽  
W. Zhu ◽  
J.T. Glass
Keyword(s):  
Single Crystal ◽  
High Temperatures ◽  
Atomic Hydrogen ◽  
Diamond Films ◽  
Nucleation Mechanism ◽  
Diamond Nucleation ◽  
Carbon Species ◽  
Nickel Substrates

Oriented diamond films have been nucleated on single crystal nickel substrates seeded with non-diamond carbon and annealed at high temperatures in atomic hydrogen. The non-diamond carbon seeds included graphite powders, fullerene (60) powders, and gaseous carbon species. It was found that these different non-diamond carbon powders or species were effective in the enhancement of oriented nucleation of diamond. The morphologies of diamond films were similar regardless of the types of carbon used, suggesting a common nucleation mechanism involved. Based on the experimental observations, a revised model was developed for the oriented nucleation of diamond on Ni.

The Nucleation and Growth of Nanocrystalline Diamond Films in Millimeter-Wave CVD Reactor

2012 ◽  
Vol 20 (4-7) ◽  
pp. 600-605 ◽  
Author(s):  
V. V. Chernov ◽  
A. L. Vikharev ◽  
A. M. Gorbachev ◽  
A. V. Kozlov ◽  
A. Ya. Vul' ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

scholarly journals Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Fei Peng ◽  
Shuang-Jiao Qin ◽  
Yu Zhao ◽  
Ge-Bo Pan
Keyword(s):  
Single Crystal ◽  
Electrochemical Techniques ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Nucleation ◽  
Instantaneous Nucleation ◽  
Nucleation And Growth Mechanism ◽  
Transient Measurements

The electrochemical deposition of zinc on single-crystaln-type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized by means of scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of −1.12 V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ~0.132 mA cm−2was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10 mM ZnSO4+ 0.5 M Na2SO4+ 0.5 M H3BO3(pH = 4).

Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique

1996 ◽  
Vol 458 ◽  
Author(s):  
Seung-Joon Jeon ◽  
Arun Kumar Chawla ◽  
Young-Joon Baik ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Three Dimensional ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Texture Formation ◽  
Tem Characterization ◽  
Nucleation And Growth Mechanism

ABSTRACTHighly oriented diamond films were deposited on a (001) silicon substrate by bias enhanced MPCVD technique. Three-dimensional TEM characterizations were carried out to understand the nucleation and growth mechanism of diamond grains. The surface morphology, defects, and misorientations of diamond films were compared as a function of synthesizing temperatures and thickness of the films. From our experimental results the texture formation mechanism of diamond films is discussed.

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