Pulsed Ion Beam Induced Silicide Formation

1981 ◽  
Vol 39 ◽  
pp. 166-167
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Metal Film ◽  
Ion Beam ◽  
Radial Profile ◽  
Marx Generator ◽  
Silicide Formation ◽  
Thin Foils ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Transmission Electron Microscope Study ◽  
Electron Microscopes

Metal silicides have found increasing use in microelectronic industry as contact material as well as interconnect between devices. Silicide formation is based on the reaction between metal film and substrate silicon. Thermal, laser, electron beam and ion-mixing induced silicide formation have been widely studied. Recently both scanning and pulsed ion beams have been used to anneal semiconductors. In this presentation, we report pulsed ion beam induced silicide formation.Ni films, 300 and 400 Å thick, were e-gun deposited on (001) oriented, 2 Ω-cm, n-type silicon with substrate temperature maintained at 150°C. A magnetically insulated diode driven by a Marx generator, constructed and run by J. Neri and D. Hammer of Laboratory for Plasma Studies at Cornell in conjunction with J. E. E. Baglin of IBM Research was used to produce pulsed proton and barium beams. Samples were irradiated with about 200 nsec, 200-300 keV, 10-100 A/cm2 ion pulses. A Gaussian-type radial profile was generally obtained. Thin foils for transmission electron microscope study were then chemically polished from silicon side. JEOL 100B and Siemens 102 electron microscopes were used to investigate microstructural changes.

scholarly journals Computer-Controlled Polishing System For Preparing Multiple Pre-FIB TEM Specimens

2007 ◽  
Vol 15 (6) ◽  
pp. 38-39
Author(s):  
D. J. MacMahon ◽  
E. Raz-Moyal
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Product Yield ◽  
Interface Layer ◽  
Ex Situ ◽  
Advantages And Disadvantages ◽  
Transmission Electron ◽  
Invaluable Tool ◽  
Electron Microscopes

Semiconductor manufacturers are increasingly turning to Transmission Electron Microscopes (TEMs) to monitor product yield and process control, analyze defects, and investigate interface layer morphology. To prepare TEM specimens, Focused Ion Beam (FIB) technology is an invaluable tool, yielding a standard milled TEM lamella approximately 15 μm wide, 5 μm deep and ~100 nm thick. Several techniques have been developed to extract these tiny objects from a large wafer and view it in the TEM. These techniques, including ex-situ lift-out, H-bar, and in-situ lift-out, have different advantages and disadvantages, but all require painstaking preparation of one specimen at a time.

Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging

2008 ◽  
Author(s):  
R.J. Young ◽  
A. Buxbaum ◽  
B. Peterson ◽  
R. Schampers
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques

Abstract Scanning transmission electron microscopy with scanning electron microscopes (SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques.

Ion-Beam-Induced Silicide Formation in Nickel Thin Films on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
C. Y. Hou
Keyword(s):  
Thin Films ◽  
Driving Force ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Critical Value ◽  
Silicide Formation ◽  
Nickel Thin Films ◽  
Transmission Electron ◽  
Post Implantation

As+-ion-induced silicide formation in nickel thin films on silicon was investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The emphasis was on the study of ion-beam-induced microstructural changes.For 160 keV As+ implantation, amorphization of the interface occurred at a dose of 5 × 1014 cm−2. Ni2Si was found together with an amorphous layer after a 1 × 1015 cm−2 bombardment. For Ni/Si(100) the surface layer became completely amorphous after implantation to 5×1015 cm−2. Silicides were found after a 1×1016 cm−2 irradiation. The amorphous layer was not stable enough to withstand the enormous chemical driving force causing the formation of crystalline silicides as the composition ratio Nsi/NNi reached a critical value. A similar trend for ion-beam-induced reactions was found for 190 keV As+ implantation on Ni/Si(111) as for 160 keV implantation.The results of post-implantation annealing showed major differences from those obtained for directly annealed samples.

Interfacial Reactions during Explosive Bonding

2014 ◽  
Vol 783-786 ◽  
pp. 1476-1481 ◽  
Author(s):  
Henryk Paul
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Structure ◽  
Energy Dispersive Spectrometry ◽  
Ion Beam ◽  
Intermetallic Phases ◽  
Thin Foils ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Beam Technique

The layers near the interface of explosively welded plates were investigated by means of microscopic observations, mostly with the use of transmission electron microscopy (and Focus Ion Beam technique for the thin foils preparation) equipped with energy dispersive spectrometry. The metal compositions based on steels and Ti, Zr, Ta or Cu, were analyzed. The study was focused on the identification of the intermetallic phases inside the melted zones, the possible interdiffusion between the bonded metals and the changes in the dislocation structure.

The relevance of local lattice parameter measurements using CBED

1988 ◽  
Vol 46 ◽  
pp. 1006-1007
Author(s):  
Hamish L. Fraser
Keyword(s):  
Materials Science ◽  
Lattice Parameter ◽  
Physical Situation ◽  
Thin Foils ◽  
Transmission Electron ◽  
Local Lattice ◽  
The Subject ◽  
Electron Microscopes ◽  
Convergent Beam ◽  
Made In

Since the development of transmission electron microscopes in which the electron beam may be caused to be incident on the sample in the form of a convergent probe, much work has been aimed at the use of convergent beam electron diffraction (CBED) in materials science. One of the techniques afforded by CBED permits the measurement of lattice parameters on a scale more or less defined by the diameter of the probe at the sample, and so a powerful means of determining local distortions has become available. While this technique appears to be very exciting, as is shown below, the necessary use of thin foils results in the possibility of surface relaxations modifying the stress fields of a given distortion, and this raises the question of the relevance of measurements made in thin foils to the physical situation in the bulk. This question is the subject of this paper.

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