Characterization of Ga Implantation during Focused Ion-Beam Milling

2001 ◽  
Vol 7 (S2) ◽  
pp. 954-955
Author(s):  
D. J. Larson ◽  
R. J. Kvitek
Keyword(s):  
Grain Growth ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
High Energy ◽  
Dislocation Motion ◽  
Material Deposition ◽  
Transmission Electron ◽  
Growth Dislocation ◽  
Beam Currents

In recent years, the use of the focused-ion beam (FIB) microscope has become widespread in the areas of materials processing and materials characterizaation. Although initial commercialization of FIB instruments was driven by applications in the semiconductor industry, recently the FIB has emerged as a broad characterization tool capable of imaging, material removal and material deposition. This combination makes it a useful instrument for applications ranging from site-specific sample preparation for transmission electron microscopy1 to thin-film head manufacturing. However, since the interaction of a high-energy ion beam (e.g., 30 keV Ga) with a solid inevitably produces implantation damage and the possibility of other effects such as grain growth, dislocation motion or degradation of magnetic properties , it is important to quantify to what extent the material under examination has been modified. Simple TRIM simulations may provide an estimation of the implantation level and depth to which ions will travel into a solid, but these results may not be accurate because FIB milling is not a static situation.In order to investigate Ga implantation depth, concentration and possible grain growth effects, three circular regions on a 500 nm thick electroplated Ni-80 at.% Fe film were milled using 30 keV Ga ions at three different beam currents, Fig. 1.

Direct Insights on Flax Fiber Structure by Focused Ion Beam Microscopy

2010 ◽  
Vol 16 (2) ◽  
pp. 175-182 ◽  
Author(s):  
Bernadette Domenges ◽  
Karine Charlet
Keyword(s):  
Electron Microscopy ◽  
Cell Wall ◽  
Cross Sections ◽  
Secondary Cell Wall ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Flax Fibers ◽  
Transmission Electron ◽  
Transition Modes ◽  
Beam Currents

AbstractIn this article, it is shown that focused ion beam (FIB) systems can be used to study the inner structure of flax fibers, the use of which as a reinforcing material in polymer composites still draws much interest from multiple disciplines. This technique requires none of the specific preparations necessary for scanning electron microscopy or transmission electron microscopy studies. Irradiation experiments performed on FIB prepared cross sections with very low Ga+ion beam currents revealed the softer material components of fibers. Thus, it confirmed the presence of pectin-rich layers at the interfaces between the fibers of a bundle, but also allowed the precise localization of such layers within the secondary cell wall. Furthermore, it suggested new insights on the transition modes between the sublayers of the secondary cell wall.

Alleviating Sample Charging during FIB Operation

2015 ◽  
Author(s):  
Q. Liu ◽  
H.B. Kor ◽  
Y.W. Siah ◽  
C.L. Gan
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Milling Process ◽  
Front Side ◽  
Dual Beam ◽  
Transmission Electron

Abstract Dual-beam focused ion beam (DB-FIB) system is widely used in the semiconductor industry to prepare cross-sections and transmission electron microscopy (TEM) lamellae, modify semiconductor devices and verify layout. One of the factors that limits its success rate is sample charging, which is caused by a lack of conductive path to discharge the accumulated charges. In this paper, an approach using an insitu micromanipulator was investigated to alleviate the charging effects. With this approach, a simple front side semiconductor device modification was carried out and the corresponding stage current was monitored to correlate to the milling process.

Application of Focused Ion Beam to Atom Probe Tomography Specimen Preparation from Mechanically Alloyed Powders

2007 ◽  
Vol 13 (5) ◽  
pp. 347-353 ◽  
Author(s):  
Pyuck-Pa Choi ◽  
Tala'at Al-Kassab ◽  
Young-Soon Kwon ◽  
Ji-Soon Kim ◽  
Reiner Kirchheim
Keyword(s):  
Atom Probe Tomography ◽  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
High Energy ◽  
Specimen Preparation ◽  
Mechanically Alloyed ◽  
Cross Sectional ◽  
Beam Currents

Focused ion-beam milling has been applied to prepare needle-shaped atom probe tomography specimens from mechanically alloyed powders without the use of embedding media. The lift-out technique known from transmission electron microscopy specimen preparation was modified to cut micron-sized square cross-sectional blanks out of single powder particles. A sequence of rectangular cuts and annular milling showed the highest efficiency for sharpening the blanks to tips. First atom probe results on a Fe95Cu5 powder mechanically alloyed in a high-energy planetary ball mill for 20 h have been obtained. Concentration profiles taken from this powder sample showed that the Cu distribution is inhomogeneous on a nanoscale and that the mechanical alloying process has not been completed yet. In addition, small clusters of oxygen, stemming from the ball milling process, have been detected. Annular milling with 30 keV Ga ions and beam currents ≥50 pA was found to cause the formation of an amorphous surface layer, whereas no structural changes could be observed for beam currents ≤10 pA.

scholarly journals Thickness Control and Targeting in Large Scale Automated XTEM Lamella Preparation

2021 ◽  
Author(s):  
Vikas Dixit ◽  
Bryan Gauntt ◽  
Taehun Lee
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Key Factors ◽  
Thickness Control ◽  
Precise Control ◽  
Transmission Electron ◽  
Thin Lamella

Abstract The automation of both, transmission electron microscopy (TEM) imaging and lamella preparation using focused ion beam (FIB) has gathered an enormous momentum in last few years, especially in the semiconductor industry. The process development of current and future microprocessors requires a precise control on the patterning of a multitude of ultrafine layers, several of which are in the order of nanometers. The statistical accuracy and reliability of TEM based metrology and failure analysis of such complex and refined structures across the wafer needs a large-scale sampling, which is feasible only with an automation. An inherent requirement of automating TEM sample preparation entails a need of a robust and repeatable methodology that provides both, a good thickness control and an accurate targeting, on the intended feature in the ultra-thin lamella. In this work, key factors that impact both these aspects of a TEM lamella preparation will be discussed. In addition, steps needed to ensure that FIB toolsets consistently and reliably produce high quality samples, will be highlighted.

Automatic TEM Sample Preparation

1999 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Kim Kisslinger ◽  
Ron Oviedo ◽  
Efrat M. Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Target Area ◽  
Transmission Electron ◽  
Sample Edge ◽  
Added Benefit ◽  
Specific Distance

Abstract The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation may be difficult and time-consuming, and depending on the operator may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB processing, and the need to characterize specific devices requires a pre-FIB preparation method to isolate specific regions on the wafer. An innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent thinning by FIB has been developed. Based on controlled microcleaving technology, the system automatically performs the pre-FIB preparation in less than 30 minutes. An important added benefit is that the target area to be analyzed can be positioned at a specific distance from the sample edge, thereby facilitating the final FIB milling stage. The thinned specimen is automatically packaged for subsequent FIB processing and TEM. Details of the method and examples showing TEM results from tungsten filled vias are presented.

scholarly journals Automated TEM Sample Preparation

2000 ◽  
Vol 8 (5) ◽  
pp. 14-19 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Efrat Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Milling Time ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Sample Edge ◽  
Specific Distance

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation can be difficult and time-consuming, and, depending on the operator, may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB and the need to characterize specific devices requires a pre-FIB preparation method that can target specific features on the wafer. We will discuss an innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent FIB thinning. The complete pre-FIB preparation takes less than 30 minutes and yields a sample in which the targeted feature is positioned a specific distance from the sample edge, thereby minimizing final FIB milling time. The output specimen is automatically packaged for FIB milling and TEM analysis. We also present drawings of the process flow and examples showing TEM results from tungsten filled vias.

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE

2015 ◽  
Vol 821-823 ◽  
pp. 965-969
Author(s):  
Fernando Lloret ◽  
D. Araujo ◽  
M.P. Villar ◽  
L. Liu ◽  
Konstantinos Zekentes
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Si Nanowires ◽  
Transmission Electron ◽  
Set Up

Si nanowires (NWs) samples have been converted to silicon carbide (SiC) NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular beam epitaxy (MBE) set-up. Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED) have been in-situ carried out to control the growth process. Scanning electron microscopy (SEM) and conventional transmission electron microscopy (CTEM) have been used to characterize the resulting nanostructures. In addition, the samples have been prepared by focused ion beam (FIB) in order to have electron-transparently lamellas for TEM with the interface nanowire-substrate. SiC/Si shell/core NWs free of planar defects have been obtained for conversion tmpratures lower than 800oC.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

Redeposition Effects During the FIB Milling of Silicon

2001 ◽  
Vol 7 (S2) ◽  
pp. 956-957
Author(s):  
S. Rubanov ◽  
P.R. Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Target Material ◽  
Ion Source ◽  
Cross Sectional ◽  
Damage Layer ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Milled Material ◽  
Beam Currents

The technique for the preparation of specimens for transmission electron microscopy (TEM) using the focused ion beam (FIB) miller typically consists of a series of milling steps performed over both sides of an area of interest until an electron transparent membrane is achieved [1]. This process is often accompanied by the formation of damage layers on the surfaces of the specimen. The origins of any damage layer are still not clear. On one hand the process of amorphisation of the target material by the highly energetic ion beam is well known. Alternatively, other workers have reported that this damage layer can be connected with redeposition of milled material. [2,3]. in this paper we have studied redeposition effects during FIB milling of silicon TEM specimens.A FEI xP200 FIB system with a Ga+ ion source operating at 30 kV was used in this work. to study redeposition effects a row of trenches on a silicon specimen was milled under different beam currents ranging from 1000 to 6600 pA. The size of such trenches was 15x10 μm wide and 1 μm deep. The specimen was then removed from the FIB and sputter coated with a ∼50-100 nm thick Au film to preserve the trench surfaces from further damage during subsequent milling. The specimen was then placed back in the FIB system and a second set of trenches 5×8 μm wide and 0.6 μm deep was milled on the bottom of first set of trenches (Fig. 1a). The specimens were sputter coated with Au again and were placed back in the FIB system and the trenches were then covered with 1 μ thick Pt strips using the metal deposition facility of the FIB. The presence of these protection layers (Au and Pt) ensures that the final TEM specimen have unmodified original damage layers resulting from the initial milling steps. Cross-sectional TEM specimens of the trench walls were then prepared using normal FIB procedures (Fig. 1b) [2].

scholarly journals Depth distribution profile of martensite phase observed by transmission electron microscope in ion implanted metals

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
Dwi Gustiono
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Depth Distribution ◽  
Ion Beam ◽  
Thin Foil ◽  
High Energy ◽  
Martensite Phase ◽  
Distribution Profile ◽  
Transmission Electron ◽  
Simulation Based

In this work, transmission electron microscopy (TEM) observation results from a depth distribution profile of the nano-martensite occuring in titanium implanted austenitic stainless steel is presented. The thickness of 200 keV high-energy ion implantation induced layer until 150 nm as calculated by the TRIM computer simulation based on the Monte-Carlo program. After the implantation, the specimens were attached to thin foil ring to be milled by focused ion beam (FIB). TEM observation on the ion implantation induced layer reveled that nano-martensite is distributed until80 nm under surface. the nano-martensite mostly nucleated at the region near the surface occurred the higher concentration gradient of implanted ion, namely higher stress concentration takes place so that this stress introduced due to the implanted ions act as a driving force for the transformation.

Sign in / Sign up

Export Citation Format

Share Document