scholarly journals Thickness Control and Targeting in Large Scale Automated XTEM Lamella Preparation

2021 ◽  
Author(s):  
Vikas Dixit ◽  
Bryan Gauntt ◽  
Taehun Lee
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Key Factors ◽  
Thickness Control ◽  
Precise Control ◽  
Transmission Electron ◽  
Thin Lamella

Abstract The automation of both, transmission electron microscopy (TEM) imaging and lamella preparation using focused ion beam (FIB) has gathered an enormous momentum in last few years, especially in the semiconductor industry. The process development of current and future microprocessors requires a precise control on the patterning of a multitude of ultrafine layers, several of which are in the order of nanometers. The statistical accuracy and reliability of TEM based metrology and failure analysis of such complex and refined structures across the wafer needs a large-scale sampling, which is feasible only with an automation. An inherent requirement of automating TEM sample preparation entails a need of a robust and repeatable methodology that provides both, a good thickness control and an accurate targeting, on the intended feature in the ultra-thin lamella. In this work, key factors that impact both these aspects of a TEM lamella preparation will be discussed. In addition, steps needed to ensure that FIB toolsets consistently and reliably produce high quality samples, will be highlighted.

Alleviating Sample Charging during FIB Operation

2015 ◽  
Author(s):  
Q. Liu ◽  
H.B. Kor ◽  
Y.W. Siah ◽  
C.L. Gan
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Milling Process ◽  
Front Side ◽  
Dual Beam ◽  
Transmission Electron

Abstract Dual-beam focused ion beam (DB-FIB) system is widely used in the semiconductor industry to prepare cross-sections and transmission electron microscopy (TEM) lamellae, modify semiconductor devices and verify layout. One of the factors that limits its success rate is sample charging, which is caused by a lack of conductive path to discharge the accumulated charges. In this paper, an approach using an insitu micromanipulator was investigated to alleviate the charging effects. With this approach, a simple front side semiconductor device modification was carried out and the corresponding stage current was monitored to correlate to the milling process.

Automatic TEM Sample Preparation

1999 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Kim Kisslinger ◽  
Ron Oviedo ◽  
Efrat M. Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Target Area ◽  
Transmission Electron ◽  
Sample Edge ◽  
Added Benefit ◽  
Specific Distance

Abstract The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation may be difficult and time-consuming, and depending on the operator may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB processing, and the need to characterize specific devices requires a pre-FIB preparation method to isolate specific regions on the wafer. An innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent thinning by FIB has been developed. Based on controlled microcleaving technology, the system automatically performs the pre-FIB preparation in less than 30 minutes. An important added benefit is that the target area to be analyzed can be positioned at a specific distance from the sample edge, thereby facilitating the final FIB milling stage. The thinned specimen is automatically packaged for subsequent FIB processing and TEM. Details of the method and examples showing TEM results from tungsten filled vias are presented.

scholarly journals Automated TEM Sample Preparation

2000 ◽  
Vol 8 (5) ◽  
pp. 14-19 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Efrat Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Milling Time ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Sample Edge ◽  
Specific Distance

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation can be difficult and time-consuming, and, depending on the operator, may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB and the need to characterize specific devices requires a pre-FIB preparation method that can target specific features on the wafer. We will discuss an innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent FIB thinning. The complete pre-FIB preparation takes less than 30 minutes and yields a sample in which the targeted feature is positioned a specific distance from the sample edge, thereby minimizing final FIB milling time. The output specimen is automatically packaged for FIB milling and TEM analysis. We also present drawings of the process flow and examples showing TEM results from tungsten filled vias.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method

1997 ◽  
Vol 480 ◽  
Author(s):  
H. Kimura ◽  
K. Shimizu
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Source Region ◽  
Preparation Technique ◽  
Dopant Distribution ◽  
Sample Preparation Technique ◽  
Transmission Electron ◽  
Tem Method

AbstractWe present a sample preparation technique for using transmission electron microscopy (TEM) to profile the dopant in a specified doped region of a very large scale integrated (VLSI) devices. This technique is based on preferential etching of the doped region in silicon. Because the rate at which silicon is etched depends on the dopant concentration, the dopant distribution can be inferred by observing the thickness fringe. Using two-beam approximation and information on the dependence of the etching rate on the concentration, we calculated the intensity of the transmitted electron beam and found that the results agreed well with the observed fringes. In addition, by using a focused ion beam (FIB), we could also observe the dopant distribution in a specified source region of a VLSI device.

Defect Analysis and Process Development of Microelectronics Devices Using Focused Ion Beam and Energy Filtering Transmission Electron Microscopy.

1999 ◽  
Vol 5 (S2) ◽  
pp. 900-901
Author(s):  
R. Pantel ◽  
G. Mascarin ◽  
G. Auvert
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Preparation Technique ◽  
Defect Analysis ◽  
Tem Analysis ◽  
Energy Filtering ◽  
Transmission Electron

1. Introduction.With continuing reductions in semiconductor device dimensions high spatial resolution physical and chemical analysis techniques will be more and more required for defect analysis and process development in the microelectronics field. Transmission Electron Microscopy (TEM) analysis is now extensively used thanks to the fast Focused Ion Beam (FIB) specimen preparation technique which has furthered its development. Recently, we have shown the advantages of adding Electron Energy Loss Spectroscopy (EELS) to FIB-TEM analysis for semiconductor process characterization. In this paper we extend the EELS technique using FIB sample preparation to Energy Filtering TEM (EFTEM) observations. The EFTEM analysis allows high-resolution compositional mapping using spectroscopic imaging of core level ionization edges3. We show some applications of FIB-EFTEM to defect analysis and process development.2. Experimental details.The FIB system is a MICRION model 9500 EX using a gallium ion beam of 50 keV maximum energy with a 5 nm minimum spot diameter.

scholarly journals Material Contrast of Scanning Electron and Ion Microscope Images of Metals

2008 ◽  
Vol 16 (1) ◽  
pp. 6-11 ◽  
Author(s):  
T. Suzuki ◽  
M. Kudo ◽  
Y. Sakai ◽  
T. Ichinokawa
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Source ◽  
Transmission Electron ◽  
Material Contrast ◽  
Ion Microscopy ◽  
Ion Impact ◽  
Object Of Study ◽  
Scanning Electron

The rapid technical development of FIM (Focused Ion Beam) technology has spawned an increase in spatial resolution capability in scanning ion microscopy (SIM) technology. Furthermore, FIM has been used for preparation of thin specimens in transmission electron microscopy and micro-fabrication of electronic devices in the semiconductor industry. Recently, a scanning ion microscope with a helium field ion source has been developed. Thus, the contrast formation of emission electron images in scanning ion microscopy has been the object of study for analyzing images of materials specimens, similar to the theory behind scanning electron microscope (SEM) contrast formation. Furthermore, whether the electron emission yield γ induced by ion impact is periodic or non-periodic as a function of Z2 (the atomic number of the target) has not been well studied in the low energy region from several keV to the several tens of keV values used in SIM.

Characterization of Ga Implantation during Focused Ion-Beam Milling

2001 ◽  
Vol 7 (S2) ◽  
pp. 954-955
Author(s):  
D. J. Larson ◽  
R. J. Kvitek
Keyword(s):  
Grain Growth ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
High Energy ◽  
Dislocation Motion ◽  
Material Deposition ◽  
Transmission Electron ◽  
Growth Dislocation ◽  
Beam Currents

In recent years, the use of the focused-ion beam (FIB) microscope has become widespread in the areas of materials processing and materials characterizaation. Although initial commercialization of FIB instruments was driven by applications in the semiconductor industry, recently the FIB has emerged as a broad characterization tool capable of imaging, material removal and material deposition. This combination makes it a useful instrument for applications ranging from site-specific sample preparation for transmission electron microscopy1 to thin-film head manufacturing. However, since the interaction of a high-energy ion beam (e.g., 30 keV Ga) with a solid inevitably produces implantation damage and the possibility of other effects such as grain growth, dislocation motion or degradation of magnetic properties , it is important to quantify to what extent the material under examination has been modified. Simple TRIM simulations may provide an estimation of the implantation level and depth to which ions will travel into a solid, but these results may not be accurate because FIB milling is not a static situation.In order to investigate Ga implantation depth, concentration and possible grain growth effects, three circular regions on a 500 nm thick electroplated Ni-80 at.% Fe film were milled using 30 keV Ga ions at three different beam currents, Fig. 1.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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