Alleviating Sample Charging during FIB Operation

2015 ◽  
Author(s):  
Q. Liu ◽  
H.B. Kor ◽  
Y.W. Siah ◽  
C.L. Gan
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Milling Process ◽  
Front Side ◽  
Dual Beam ◽  
Transmission Electron

Abstract Dual-beam focused ion beam (DB-FIB) system is widely used in the semiconductor industry to prepare cross-sections and transmission electron microscopy (TEM) lamellae, modify semiconductor devices and verify layout. One of the factors that limits its success rate is sample charging, which is caused by a lack of conductive path to discharge the accumulated charges. In this paper, an approach using an insitu micromanipulator was investigated to alleviate the charging effects. With this approach, a simple front side semiconductor device modification was carried out and the corresponding stage current was monitored to correlate to the milling process.

Transmission Electron Microscopy Sample Preparation By Design-Based Recipe Writing in a DBFIB

2018 ◽  
Author(s):  
J. Demarest ◽  
B. Austin ◽  
J. Arjavac ◽  
M. Breton ◽  
M. Bergendahl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
State Of The Art ◽  
Ion Beam ◽  
Critical Dimension ◽  
Pattern Match ◽  
Dual Beam ◽  
Transmission Electron

Abstract Transmission electron microscopy (TEM) sample can be routinely made at a sub 30nm thickness and specific features in semiconductor device design are on the order of 30nm and smaller. As a result, small changes in pattern match registration can significantly influence the success or failure of proper TEM sample placement as an approximately 15nm shift in lamella placement can easily cause the sample to be off the feature of interest. To address this issue, design based recipe writing is being developed on a dual beam focused ion beam platform. The intent is to have the tool read a GDS file and pattern match the design information to physical wafer images in a similar fashion to state-of-the-art critical dimension scanning electron microscopy operation. While the results are very encouraging, more work needs to be done to ensure a TEM sample of approximately 30nm thickness is placed at the desired location.

Direct Insights on Flax Fiber Structure by Focused Ion Beam Microscopy

2010 ◽  
Vol 16 (2) ◽  
pp. 175-182 ◽  
Author(s):  
Bernadette Domenges ◽  
Karine Charlet
Keyword(s):  
Electron Microscopy ◽  
Cell Wall ◽  
Cross Sections ◽  
Secondary Cell Wall ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Flax Fibers ◽  
Transmission Electron ◽  
Transition Modes ◽  
Beam Currents

AbstractIn this article, it is shown that focused ion beam (FIB) systems can be used to study the inner structure of flax fibers, the use of which as a reinforcing material in polymer composites still draws much interest from multiple disciplines. This technique requires none of the specific preparations necessary for scanning electron microscopy or transmission electron microscopy studies. Irradiation experiments performed on FIB prepared cross sections with very low Ga+ion beam currents revealed the softer material components of fibers. Thus, it confirmed the presence of pectin-rich layers at the interfaces between the fibers of a bundle, but also allowed the precise localization of such layers within the secondary cell wall. Furthermore, it suggested new insights on the transition modes between the sublayers of the secondary cell wall.

Transmission electron microscopy of semiconductor devices

1986 ◽  
Vol 44 ◽  
pp. 722-723
Author(s):  
J. M. Brown
Keyword(s):  
Electron Microscopy ◽  
Cross Sections ◽  
New Technologies ◽  
Semiconductor Device ◽  
Semiconductor Industry ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Silicon Device ◽  
Design And Manufacture ◽  
Preparation Techniques

The search for further miniaturization in the semiconductor industry has resulted in the reduction in the dimensions of devices to a size which can no longer be effectively seen by the conventional methods of light microscopy. The use of both transmission and scanning electron microscopy in the field of silicon device characterization has now become an essential ingredient of the design and manufacture of new technologies. It is often the only way in which a device designer can know for certain whether the manufacturing process is producing the required structure. Cross-sectional TEM has therefore become an integral part of both quality control and development.One of the most important areas which resulted in the increased importance of TEM in the semiconductor device field was the development of sample preparation techniques which enable cross-sections through layers of widely differing compositions that are found in the devices structures.

The Effect of Moore&s Law on the Growing Role of Transmission Electron Microscopy in the Semiconductor Industry

2001 ◽  
Vol 7 (S2) ◽  
pp. 510-511
Author(s):  
John Mardinly
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Semiconductor Device ◽  
Semiconductor Industry ◽  
Radius Of Curvature ◽  
Transmission Electron ◽  
Frequency Of Use ◽  
Pass Through

TEM has been used for semiconductor device characterization since the 1980's, when Marcus and Cheng first demonstrated the feasibility and utility of applying TEM to semiconductors. The frequency of use of TEM has accelerated briskly due to the continual shrinkage of devices as predicted by Gordon Moore and now documented in the SIA roadmap (http://public.itrs.net/Home.htm). TEM use has also grown due to application of FIB techniques which make possible high precision cross-sections of specific structures. This relentless shrinking has resulted in difficulties in preparing suitable specimens. Many of the features and interfaces in a device may be curved rather than planar, and as the radius of curvature begins to approach the thickness of a TEM specimen, it can result in “geometrical blurring” of features, both for imaging and microanalysis. The origin of this blurring is illustrated in Figure 1, where it can be seen that a single electron may pass through two different features, and as a result, they are not resolved.

scholarly journals Focused Ion Beam in the Study of Biomaterials and Biological Matter

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Kathryn Grandfield ◽  
Håkan Engqvist
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Life Sciences ◽  
X Ray ◽  
The Past ◽  
Biological Matter ◽  
Dual Beam ◽  
Transmission Electron ◽  
Environmental Sem

The application of focused ion beam (FIB) techniques in the life sciences has progressed by leaps and bounds over the past decade. A once dedicated ion beam instrument, the focused ion beam today is generally coupled with a plethora of complementary tools such as dual-beam scanning electron microscopy (SEM), environmental SEM, energy dispersive X-ray spectroscopy (EDX), or cryogenic possibilities. All of these additions have contributed to the advancement of focused ion beam use in the study of biomaterials and biological matter. Biomaterials, cells, and their interfaces can be routinely imaged, analyzed, or prepared for techniques such as transmission electron microscopy (TEM) with this comprehensive tool. Herein, we review the uses, advances, and challenges associated with the application of FIB techniques to the life sciences, with particular emphasis on TEM preparation of biomaterials, biological matter, and their interfaces using FIB.

Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

2001 ◽  
Vol 16 (12) ◽  
pp. 3347-3350 ◽  
Author(s):  
S. J. Lloyd ◽  
J. M. Molina-Aldareguia ◽  
W. J. Clegg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Amorphous Material ◽  
Face Centered Cubic ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Face Centered

Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.

Local impedance and microchemical analysis of electrical heterogeneities in multilayer electroceramic devices

2007 ◽  
Vol 22 (12) ◽  
pp. 3507-3515 ◽  
Author(s):  
G.Y. Yang ◽  
P.J. Moses ◽  
E.C. Dickey ◽  
C.A. Randall
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Potential ◽  
Experimental Methodology ◽  
Electrical Measurements ◽  
Dual Beam ◽  
Transmission Electron ◽  
Voltage Contrast ◽  
Electron Energy Loss

We present an experimental methodology for locating and studying local failure sites in multilayer electroceramic devices at the submicron-length scale. In particular, the inhomogeneous degradation of multilayer ceramic capacitors is studied using a judicious combination of scanning electron microscopy (SEM), local-probe electrical measurements, focused ion beam (FIB) extraction, and transmission electron microscopy (TEM). Voltage-contrast SEM permits the identification of regions of different electrical potential within degraded multilayer devices. The local impedance from specific regions is measured in situ between a tungsten probe and the internal device electrodes, while impedance spectra are extracted for more detailed analysis. Because implementation occurs in dual-beam FIB/SEM, these locally defective sites can be extracted and thinned to electron transparency for further investigation by TEM. In this study, degraded sites in BaTiO3 multilayer capacitors are found to be associated with local oxygen deficiencies in BaTiO3, as measured by electron energy loss spectroscopy.

Sign in / Sign up

Export Citation Format

Share Document