Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/SiGe/Si Heterostructures

AbstractWe demonstrate the combined use of large area depth-profiling dislocation imaging and quantitative composition and strain measurement for a strained Si/SiGe/Si sample based on nondestructive techniques of electron beam-induced current (EBIC) and X-ray diffraction reciprocal space mapping (XRD RSM). Depth and improved spatial resolution is achieved for dislocation imaging in EBIC by using different electron beam energies at a low temperature of ~7 K. Images recorded clearly show dislocations distributed in three regions of the sample: deep dislocation networks concentrated in the “strained” SiGe region, shallow misfit dislocations at the top Si/SiGe interface, and threading dislocations connecting the two regions. Dislocation densities at the top of the sample can be measured directly from the EBIC results. XRD RSM reveals separated peaks, allowing a quantitative measurement of composition and strain corresponding to different layers of different composition ratios. High-resolution scanning transmission electron microscopy cross-section analysis clearly shows the individual composition layers and the dislocation lines in the layers, which supports the EBIC and XRD RSM results.

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Nano-Scale Residual Stress Profiling in Thin Multilayer Films with Non-Equibiaxial Stress State

Nanomaterials ◽

10.3390/nano10050853 ◽

2020 ◽

Vol 10 (5) ◽

pp. 853 ◽

Cited By ~ 1

Author(s):

Marco Sebastiani ◽

Edoardo Rossi ◽

Muhammad Zeeshan Mughal ◽

Alessandro Benedetto ◽

Paul Jacquet ◽

...

Keyword(s):

Residual Stress ◽

Focused Ion Beam ◽

Ion Beam ◽

Depth Profiling ◽

Strain Analysis ◽

Depth Resolution ◽

Image Correlation ◽

Nano Scale ◽

Unique Method ◽

The Individual

Silver-based low-emissivity (low-E) coatings are applied on architectural glazing to cost-effectively reduce heat losses, as they generally consist of dielectric/Ag/dielectric multilayer stacks, where the thin Ag layer reflects long- wavelength infrared (IR), while the dielectric layers both protect the Ag and act as an anti-reflective barrier. The architecture of the multilayer stack influences its mechanical properties and it is strongly dependent on the residual stress distribution in the stack. Residual stress evaluation by combining focused ion beam (FIB) milling and digital image correlation (DIC), using the micro-ring core configuration (FIB-DIC), offers micron-scale lateral resolution and provides information about the residual stress variation with depth, i.e., it allows depth profiling for both equibiaxial and non-equibiaxial stress distributions and hence can be effectively used to characterize low-E coatings. In this work, we propose an innovative approach to improve the depth resolution and surface sensitivity for residual stress depth profiling in the case of ultra-thin as-deposited and post-deposition annealed Si3N4/Ag/ZnO low-E coatings, by considering different fractions of area for DIC strain analysis and accordingly developing a unique influence function to maintain the sensitivity of the technique at is maximum during the calculation. Residual stress measurements performed using this novel FIB-DIC approach revealed that the individual Si3N4/ZnO layers in the multilayer stack are under different amounts of compressive stresses. The magnitude and orientation of these stresses changes significantly after heat treatment and provides a clear explanation for the observed differences in terms of scratch critical load. The results show that the proposed FIB-DIC combined-areas approach is a unique method for accurately probing non-equibiaxial residual stresses with nano-scale resolution in thin films, including multilayers.

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Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique

Applied Physics Letters ◽

10.1063/1.1734688 ◽

2004 ◽

Vol 84 (17) ◽

pp. 3316-3318 ◽

Cited By ~ 17

Author(s):

X. L. Yuan ◽

T. Sekiguchi ◽

S. G. Ri ◽

S. Ito

Keyword(s):

Electron Beam ◽

Misfit Dislocations ◽

Induced Current ◽

Strained Si ◽

Current Technique ◽

Electron Beam Induced Current

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Electron-Beam-Induced-Current (EBIC) Imaging of Defects in Si1−xGeX Multilayer Structures

MRS Proceedings ◽

10.1557/proc-148-341 ◽

1989 ◽

Vol 148 ◽

Author(s):

J.C. Sturm ◽

X. Xiao ◽

P.M. Garone ◽

P.V. Schwartz

Keyword(s):

Electron Beam ◽

Misfit Dislocations ◽

Induced Current ◽

High Quality ◽

Strained Si ◽

Density Of Dislocations ◽

Interface Defects ◽

Line Defects ◽

Electron Beam Induced Current ◽

Reaction Processing

ABSTRACTThe electron-beam-induced-current (EBIC) technique has been used to image dislocations and other defects at strained Si: Sil−xGex epitaxial interfaces and in overlying epitaxial layers grown by Limited Reaction Processing. Depending upon the bias conditions and test structure, one can distinguish between interface defects and those in overlying films. We have found that for a low density of misfit dislocations, a high quality (defect-free) overlying epitaxial layer can be grown, but for a high density of dislocations certain line defects propagate upwards in the overlying layers.

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Large area electron beam pumped krypton fluoride laser amplifier

Review of Scientific Instruments ◽

10.1063/1.1148118 ◽

1997 ◽

Vol 68 (6) ◽

pp. 2357-2366 ◽

Cited By ~ 37

Author(s):

J. D. Sethian ◽

S. P. Obenschain ◽

K. A. Gerber ◽

C. J. Pawley ◽

V. Serlin ◽

...

Keyword(s):

Electron Beam ◽

Laser Amplifier ◽

Large Area ◽

Krypton Fluoride

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Composition Quantification of Microelectronics Multilayer Thin Films by EDX: Toward Small Scale Analysis

MRS Proceedings ◽

10.1557/proc-1184-hh08-08 ◽

2009 ◽

Vol 1184 ◽

Cited By ~ 4

Author(s):

Thierry Conard ◽

Kai Arstila ◽

Thomas Hantschel ◽

Alexis Franquet ◽

Wilfried Vandervorst ◽

...

Keyword(s):

Gate Dielectric ◽

Small Scale ◽

Quantitative Composition ◽

Composition Analysis ◽

Multilayer Thin Films ◽

Large Area ◽

Fast Analysis ◽

Metal Gates ◽

High K ◽

High K Materials

AbstractIn order to continuously improve the performances of microelectronics devices through scaling, SiO2 is being replaced by high-k materials as gate dielectric; metal gates are replacing poly-Si. This leads to increasingly more complex stacks. For future generations, the replacement of Si as a substrate by Ge and/or III/V material is also considered. This also increases the demand on the metrology tools as a thorough characterization, including composition and thickness is thus needed. Many different techniques exist for composition analysis. They usually require however large area for the analysis, complex instrumentation and can be time consuming. EDS (Energy Dispersive Spectroscopy) when coupled to Scanning Electron Microscopy (SEM) has the potential to allow fast analysis on small scale areas.In this work, we evaluate the possibilities of EDS for thin film analysis based on an intercomparison of composition analysis with different techniques. We show that using proper modeling, high quality quantitative composition and thickness of multilayers can be achieved.

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Prediction of rounding phenomenon at corner tips in large-area electron beam irradiation

International Journal of Machine Tools and Manufacture ◽

10.1016/j.ijmachtools.2016.08.002 ◽

2016 ◽

Vol 110 ◽

pp. 18-26 ◽

Cited By ~ 3

Author(s):

Togo Shinonaga ◽

Akira Okada ◽

Tomoaki Miyoshi

Keyword(s):

Electron Beam ◽

Electron Beam Irradiation ◽

Beam Irradiation ◽

Large Area

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Interdiffusion in MBE-Grown Symmetrically and Asymmetrically Strained Si/Si1−xGex Superlattices Investigated by Ion Scattering

MRS Proceedings ◽

10.1557/proc-263-255 ◽

1992 ◽

Vol 263 ◽

Author(s):

B. Holländer ◽

R. Butz ◽

S. Mantl

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Rutherford Backscattering Spectrometry ◽

Buffer Layers ◽

Arrhenius Law ◽

Ion Scattering ◽

Strained Si ◽

The Individual ◽

Interdiffusion Coefficients ◽

Fourier Algorithm

ABSTRACTThe interdiffusion in MBE-grown Si/Si1−xGex superlattices was measured by Rutherford backscattering spectrometry. The superlattices consisted of 5 periods of 100 !A Si and 100 !A Si1−xGex layers with Ge concentrations, x, between 0.20 and 0.70. Both, asymmetrically strained superlattices, grown on Si(100), as well as symmetrically strained superlattices, grown on relaxed Si1−y.Gey buffer layers were investigated. Rapid thermal annealing in the temperature range between 900°C and 1125°C leads to significant interdiffusion between the individual layers, indicated by a decrease of the amplitudes of the backscattering spectra. Interdiffusion coefficients were deduced using a Fourier algorithm. The interdiffusion coefficients follow an Arrhenius law for a given Ge concentration. The interdiffusivity increases significantly with increasing Ge concentration.

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The effect of large-area pulsed electron beam melting on the corrosion and microstructure of a Ti6Al4V alloy

Applied Surface Science ◽

10.1016/j.apsusc.2014.05.105 ◽

2014 ◽

Vol 311 ◽

pp. 534-540 ◽

Cited By ~ 25

Author(s):

J.C. Walker ◽

J.W. Murray ◽

M. Nie ◽

R.B. Cook ◽

A.T. Clare

Keyword(s):

Electron Beam ◽

Electron Beam Melting ◽

Ti6al4v Alloy ◽

Large Area ◽

Pulsed Electron Beam

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Electron Microprobe and Photoluminescence Analysis of Europium-Doped Gallium Nitride Light Emitters

MRS Proceedings ◽

10.1557/proc-743-l6.15 ◽

2002 ◽

Vol 743 ◽

Cited By ~ 2

Author(s):

R. W. Martin ◽

S. Dalmasso ◽

K. P. O'Donnell ◽

Y. Nakanishi ◽

A. Wakahara ◽

...

Keyword(s):

Electron Beam ◽

Rare Earth ◽

Visible Region ◽

Depth Profiling ◽

Luminescence Spectra ◽

Light Emitters ◽

Doping Density ◽

Annealing Conditions ◽

Electron Transitions ◽

Doped Glass

ABSTRACTRare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014 – 1015 cm−2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which “heal” defects visible in the electron micrographs.

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