Characterization of Sputtered CdTe Thin Films with Electron Backscatter Diffraction and Correlation with Device Performance

2015 ◽  
Vol 21 (4) ◽  
pp. 927-935 ◽  
Author(s):  
Matthew M. Nowell ◽  
Michael A. Scarpulla ◽  
Naba R. Paudel ◽  
Kristopher A. Wieland ◽  
Alvin D. Compaan ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Electron Backscatter Diffraction ◽  
Electrical Performance ◽  
Poor Correlation ◽  
Twin Boundaries ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractThe performance of polycrystalline CdTe photovoltaic thin films is expected to depend on the grain boundary density and corresponding grain size of the film microstructure. However, the electrical performance of grain boundaries within these films is not well understood, and can be beneficial, harmful, or neutral in terms of film performance. Electron backscatter diffraction has been used to characterize the grain size, grain boundary structure, and crystallographic texture of sputtered CdTe at varying deposition pressures before and after CdCl2 treatment in order to correlate performance with microstructure. Weak fiber textures were observed in the as-deposited films, with (111) textures present at lower deposition pressures and (110) textures observed at higher deposition pressures. The CdCl2-treated samples exhibited significant grain recrystallization with a high fraction of twin boundaries. Good correlation of solar cell efficiency was observed with twin-corrected grain size while poor correlation was found if the twin boundaries were considered as grain boundaries in the grain size determination. This implies that the twin boundaries are neutral with respect to recombination and carrier transport.

Grain-size distributions and grain boundaries of chalcopyrite-type thin films

2007 ◽  
Vol 40 (5) ◽  
pp. 841-848 ◽  
Author(s):  
D. Abou-Ras ◽  
S. Schorr ◽  
H. W. Schock
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundaries ◽  
Electron Backscatter Diffraction ◽  
Distribution Functions ◽  
Size Distributions ◽  
Twin Boundaries ◽  
Solar Absorbers ◽  
Grain Size Distributions ◽  
Backscatter Diffraction

CuInSe2, CuGaSe2, Cu(In,Ga)Se2and CuInS2thin-film solar absorbers in completed solar cells were studied in cross section by means of electron-backscatter diffraction. From the data acquired, grain-size distributions were extracted, and also the most frequent grain boundaries were determined. The grain-size distributions of all chalcopyrite-type thin films studied can be described well by lognormal distribution functions. The most frequent grain-boundary types in these thin films are 60°−〈221〉tetand 71°−〈110〉tet(near) Σ3 twin boundaries. These results can be related directly to the importance of {112}tetplanes during the topotactical growth of chalcopyrite-type thin films. Based on energetic considerations, it is assumed that the most frequent twin boundaries exhibit a 180°−〈221〉tetconstellation.

scholarly journals Coupling Automated Electron Backscatter Diffraction with Transmission Electron and Atomic Force Microscopies

2000 ◽  
Vol 6 (S2) ◽  
pp. 940-941
Author(s):  
A.J. Schwartz ◽  
M. Kumar ◽  
P.J. Bedrossian ◽  
W.E. King
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Thermomechanical Processing ◽  
Electron Backscatter Diffraction ◽  
Grain Boundary Character Distribution ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Network Engineering ◽  
Backscatter Diffraction

Grain boundary network engineering is an emerging field that encompasses the concept that modifications to conventional thermomechanical processing can result in improved properties through the disruption of the random grain boundary network. Various researchers have reported a correlation between the grain boundary character distribution (defined as the fractions of “special” and “random” grain boundaries) and dramatic improvements in properties such as corrosion and stress corrosion cracking, creep, etc. While much early work in the field emphasized property improvements, the opportunity now exists to elucidate the underlying materials science of grain boundary network engineering. Recent investigations at LLNL have coupled automated electron backscatter diffraction (EBSD) with transmission electron microscopy (TEM)5 and atomic force microscopy (AFM) to elucidate these fundamental mechanisms.An example of the coupling of TEM and EBSD is given in Figures 1-3. The EBSD image in Figure 1 reveals “segmentation” of boundaries from special to random and random to special and low angle grain boundaries in some grains, but not others, resulting from the 15% compression of an Inconel 600 polycrystal.

Electron backscatter diffraction investigation of local misorientations and orientation gradients in connection with evolution of grain boundary structures in deformed and annealed zirconium. A new approach in grain boundary analysis

2013 ◽  
Vol 46 (2) ◽  
pp. 483-492 ◽  
Author(s):  
Mariusz Jedrychowski ◽  
Jacek Tarasiuk ◽  
Brigitte Bacroix ◽  
Sebastian Wronski
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Grain Orientation ◽  
Electron Backscatter Diffraction ◽  
Lattice Defect ◽  
Line Segments ◽  
Compression Direction ◽  
Electron Backscatter ◽  
Grain Orientation Spread ◽  
Backscatter Diffraction

The main aim of the present work is to study the relation between microstructural features – such as local misorientations, grain orientation gradients and grain boundary structures – and thermomechanical treatment of hexagonal zirconium (Zr702α). Electron backscatter diffraction (EBSD) topological maps are used to analyze the aforementioned material parameters at the early stages of plastic deformation imposed by channel-die compression, as well as at a partial recrystallization state achieved by brief annealing. The evolution of local misorientations and orientation gradients is investigated using the so-called kernel average misorientation (KAM) and grain orientation spread (GOS) statistics implemented in the TSLOIMdata analysis software [TexSEM Laboratories (2004), Draper, UT, USA]. In the case of grain boundaries (GBs) a new method of analysis is presented. As an addition to the classical line segments method, where the grain boundary is represented by line segments that separate particular pairs of neighboring points, an approach that focuses on grain boundary areas is proposed. These areas are represented by sets of EBSD points, which are specially selected from a modified calculation procedure for the KAM. Different evolution mechanisms of intragranular boundaries, low-angle grain boundaries and high-angle grain boundaries are observed depending on the compression direction. The observed differences are consistent with the results obtained from KAM and GOS analysis. It is also concluded that the proposed method of grain boundary characterization seems to be promising, as it provides new and interesting analysis tools such as textures, absolute fractions and other EBSD statistics of the GB areas. This description may be more compatible with a real deformed microstructure, especially for grain boundaries with very small misorientation, which are indeed clustered areas of lattice defect accumulation.

Morphology Evolution of Grain Boundary Carbides in Highly Twinned Inconel Alloy 600

2016 ◽  
Vol 879 ◽  
pp. 1111-1116 ◽  
Author(s):  
Hui Li ◽  
Jiao Rong Ma ◽  
Xin Rong Liu ◽  
Shuang Xia ◽  
Wen Qing Liu ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Aging Time ◽  
Electron Backscatter Diffraction ◽  
Coincidence Site Lattice ◽  
Morphology Evolution ◽  
Alloy 600 ◽  
Inconel Alloy ◽  
Electron Backscatter ◽  
Backscatter Diffraction

The effects of grain boundary characters on the morphology evolution of grain boundary carbides in Inconel Alloy 600 with high proportional low Σ coincidence site lattice (CSL) boundaries aged at 715 oC for 1-100 h were investigated by scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD). During the aging process, the carbides precipitated at coherent twin (Σ3) boundaries are very few and finest within all the aging time. Bar like carbides precipitated near both sides of the incoherent twin (Σ3) boundaries, and bigger carbides than that of coherent Σ3 boundaries had been found on the incoherent Σ3 boundaries. Bar like carbides precipitated near only one side of Σ9 boundaries, and much bigger carbides than that of Σ3 boundaries have been found on the Σ9 boundaries. The morphology of carbides precipitated at Σ27 and random grain boundaries are similar, and is bigger than that of precipitated at other grain boundaries. The carbides precipitated at grain boundaries with all types grow bigger with the aging time prolonging, but their growth rates are different.

In Situ Electron Backscatter Diffraction Investigation of Recrystallization in a Copper Wire

2013 ◽  
Vol 19 (4) ◽  
pp. 969-977 ◽  
Author(s):  
François Brisset ◽  
Anne-Laure Helbert ◽  
Thierry Baudin
Keyword(s):  
Grain Boundaries ◽  
High Temperatures ◽  
Electron Backscatter Diffraction ◽  
Copper Wire ◽  
High Mobility ◽  
Energy Difference ◽  
Twin Boundaries ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractThe microstructural evolution of a cold drawn copper wire (reduction area of 38%) during primary recrystallization and grain growth was observed in situ by electron backscatter diffraction. Two thermal treatments were performed, and successive scans were acquired on samples undergoing heating from ambient temperature to a steady state of 200°C or 215°C. During a third in situ annealing, the temperature was continuously increased up to 600°C. Nuclei were observed to grow at the expense of the deformed microstructure. This growth was enhanced by the high stored energy difference between the nuclei and their neighbors (driving energy in recrystallization) and by the presence of high-angle grain boundaries of high mobility. In the early stages of growth, the nuclei twin and the newly created orientations continue to grow to the detriment of the strained copper. At high temperatures, the disappearance of some twins was evidenced by the migration of the incoherent twin boundaries. Thermal grooving of grain boundaries is observed at these high temperatures and affects the high mobile boundaries but tends to preserve the twin boundaries of lower energy. Thus, grooving may contribute to the twin vanishing.

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

scholarly journals Diffracting-grain identification from electron backscatter diffraction maps during residual stress measurements: a comparison between the sin2ψ and cosα methods

2019 ◽  
Vol 52 (4) ◽  
pp. 828-843 ◽  
Author(s):  
Dorian Delbergue ◽  
Damien Texier ◽  
Martin Lévesque ◽  
Philippe Bocher
Keyword(s):  
Residual Stress ◽  
Grain Size ◽  
Tilt Angle ◽  
Measurement Errors ◽  
Electron Backscatter Diffraction ◽  
Measurement Techniques ◽  
Single Exposure ◽  
X Ray ◽  
Electron Backscatter ◽  
Backscatter Diffraction

X-ray diffraction (XRD) is a widely used technique to evaluate residual stresses in crystalline materials. Several XRD measurement methods are available. (i) The sin2ψ method, a multiple-exposure technique, uses linear detectors to capture intercepts of the Debye–Scherrer rings, losing the major portion of the diffracting signal. (ii) The cosα method, thanks to the development of compact 2D detectors allowing the entire Debye–Scherrer ring to be captured in a single exposure, is an alternative method for residual stress measurement. The present article compares the two calculation methods in a new manner, by looking at the possible measurement errors related to each method. To this end, sets of grains in diffraction condition were first identified from electron backscatter diffraction (EBSD) mapping of Inconel 718 samples for each XRD calculation method and its associated detector, as each method provides different sets owing to the detector geometry or to the method specificities (such as tilt-angle number or Debye–Scherrer ring division). The X-ray elastic constant (XEC) ½S 2, calculated from EBSD maps for the {311} lattice planes, was determined and compared for the different sets of diffracting grains. It was observed that the 2D detector captures 1.5 times more grains in a single exposure (one tilt angle) than the linear detectors for nine tilt angles. Different XEC mean values were found for the sets of grains from the two XRD techniques/detectors. Grain-size effects were simulated, as well as detector oscillations to overcome them. A bimodal grain-size distribution effect and `artificial' textures introduced by XRD measurement techniques are also discussed.

Sign in / Sign up

Export Citation Format

Share Document