UV Photodissociation of Halothane in a Focused Molecular Beam: Space-Speed Slice Imaging of Competitive Bond Breaking into Spin–Orbit-Selected Chlorine and Bromine Atoms

2020 ◽  
Vol 124 (26) ◽  
pp. 5288-5296
Author(s):  
Dock-Chil Che ◽  
Masaaki Nakamura ◽  
Hsiu-Pu Chang ◽  
King-Chuen Lin ◽  
Toshio Kasai ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Bond Breaking ◽  
Spin Orbit ◽  
Slice Imaging

Mixed transitions in the UV photodissociation of propargyl chloride revealed by slice imaging and multireference ab initio calculations

2018 ◽  
Vol 20 (43) ◽  
pp. 27474-27481 ◽  
Author(s):  
Casey D. Foley ◽  
Baptiste Joalland ◽  
S. Tahereh Alavi ◽  
Arthur G. Suits
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
Multiphoton Ionization ◽  
Spin Orbit ◽  
Slice Imaging

Resonance-enhanced multiphoton ionization (REMPI) and DC slice imaging were used to detect photoproducts Cl (2P3/2), spin–orbit excited Cl* (2P1/2), and C3H3 in the photodissociation of propargyl chloride at 212 and 236 nm.

scholarly journals Исследование методом спектроскопии фотоотражения слоев LT-GaAs, выращенных на подложках Si и GaAs

2018 ◽  
Vol 52 (7) ◽  
pp. 708
Author(s):  
Л.П. Авакянц ◽  
П.Ю. Боков ◽  
И.П. Казаков ◽  
М.А. Базалевский ◽  
П.М. Деев ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Spectral Line ◽  
Charge Carrier ◽  
Surface Charge ◽  
Conduction Band ◽  
Molecular Beam ◽  
Spin Orbit ◽  
Split Valence ◽  
Lt Gaas

AbstractThe mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition ( E _ g ) and the transition between the conduction band and spin-orbit-split valence subband ( E _ g + Δ_ SO ) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz–Keldysh oscillations).

Probing of the hot-band excitations in the photodissociation of OCS at 288 nm by DC slice imaging

2004 ◽  
Vol 82 (6) ◽  
pp. 880-884 ◽  
Author(s):  
Myung Hwa Kim ◽  
Wen Li ◽  
Suk Kyoung Lee ◽  
Arthur G Suits
Keyword(s):  
Cross Section ◽  
Molecular Beam ◽  
Potential Surface ◽  
Imaging Technique ◽  
Branching Ratio ◽  
Translational Energy ◽  
Hot Band ◽  
Anisotropy Parameters ◽  
Slice Imaging ◽  
Central Slice

The photodissociation dynamics of OCS at 288 nm has been investigated using the DC (direct current) slice imaging technique, which is a recently developed high-resolution "slicing" approach that directly measures the central slice of the photofragment distribution in imaging experiments. By analyzing a DC sliced image of S(1D2) photofragments we observe dissociation originating from OCS molecules excited up to v2 = 4 in the molecular beam. The measured translational energy distribution was used to determine the branching ratio for the contribution from each initial bending state (0 v2 0) of OCS and relative photodissociation cross section ratios compared to v2 = 1. Large negative anisotropy parameters determined as a function of the S(1D2) fragment recoil speed indicate that the photodissociation of OCS at 288 nm occurs exclusively from the 11A′′(1Σ–) bending excited potential surface that can be accessed through a perpendicular transition.Key words: DC slicing imaging, OCS, photodissociation, hot-band excitation.

Rotational analysis of the BaI C2Π–X2Σ+ (0,0) band

1984 ◽  
Vol 62 (12) ◽  
pp. 1467-1477 ◽  
Author(s):  
Mark A. Johnson ◽  
Chifuru Noda ◽  
John S. McKillop ◽  
Richard N. Zare
Keyword(s):  
Significant Interaction ◽  
Molecular Beam ◽  
Band System ◽  
Spectroscopic Techniques ◽  
Spin Orbit ◽  
Rotational Analysis ◽  
Local Perturbations ◽  
State Spin ◽  
Laser Spectroscopic ◽  
Π State

Rotational analysis of the BaI C2Π–X2Σ+ (0,0) band system has been performed using molecular beam and laser spectroscopic techniques. This band is free from local perturbations, although significant interaction of the C2Π state with several other 2Σ+ states is indicated. The spin-orbit ordering of the C state is confirmed to be regular, while the Λ-doubling parameters p and q are opposite in sign. Apparent anomalies in the line strengths of various rotational branches in the two spin-orbit sub-bands are related to observed differences in the hyperfine structure of the C-state spin-orbit components.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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