Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Langmuir ◽

10.1021/acs.langmuir.0c00741 ◽

2020 ◽

Vol 36 (44) ◽

pp. 13144-13154

Author(s):

Li Zheng ◽

Wei He ◽

Valentina Spampinato ◽

Alexis Franquet ◽

Stefanie Sergeant ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Passivation Layer ◽

Layer Deposition ◽

Octadecyl Silane

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Atomic layer deposition technique refining oxygen vacancies in TiO2 passivation layer for photoelectrochemical ammonia synthesis

Composites Communications ◽

10.1016/j.coco.2021.101037 ◽

2021 ◽

pp. 101037

Author(s):

Mengqiu Xu ◽

Fuchun Xu ◽

Kaili Zhu ◽

Xudong Xu ◽

Ping Deng ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Oxygen Vacancies ◽

Ammonia Synthesis ◽

Atomic Layer ◽

Passivation Layer ◽

Deposition Technique ◽

Layer Deposition ◽

Atomic Layer Deposition Technique

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Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.032303 ◽

2016 ◽

Vol 55 (3) ◽

pp. 032303 ◽

Author(s):

Mohammad Maksudur Rahman ◽

Akio Higo ◽

Halubai Sekhar ◽

Mohd Erman Syazwan ◽

Yusuke Hoshi ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Quantum Dot ◽

High Efficiency ◽

Atomic Layer ◽

Passivation Layer ◽

Si Quantum Dot ◽

High Efficiency Solar Cells ◽

Layer Deposition

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Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.047 ◽

2010 ◽

Vol 256 (16) ◽

pp. 5021-5024 ◽

Author(s):

Edward Sun ◽

Fu-Hsiang Su ◽

Ching-Huang Chen ◽

Miin-Jang Chen

Keyword(s):

Atomic Layer Deposition ◽

Surface Passivation ◽

Atomic Layer ◽

Passivation Layer ◽

Photoluminescence Intensity ◽

Layer Deposition

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AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

IEEE Electron Device Letters ◽

10.1109/led.2008.2000949 ◽

2008 ◽

Vol 29 (8) ◽

pp. 838-840 ◽

Author(s):

Yuanzheng Yue ◽

Yue Hao ◽

Jincheng Zhang ◽

Jinyu Ni ◽

Wei Mao ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Passivation Layer ◽

Layer Deposition

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Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires

Journal of Luminescence ◽

10.1016/j.jlumin.2013.07.076 ◽

2014 ◽

Vol 145 ◽

pp. 307-311 ◽

Author(s):

Jeong-Gyu Song ◽

Jusang Park ◽

Jaehong Yoon ◽

Hwangje Woo ◽

Kyungyong Ko ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Magnesium Oxide ◽

Atomic Layer ◽

Zno Nanowires ◽

Passivation Layer ◽

Enhanced Photoluminescence ◽

Layer Deposition

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Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer

Journal of The Electrochemical Society ◽

10.1149/1.3250936 ◽

2010 ◽

Vol 157 (1) ◽

pp. K10 ◽

Author(s):

Elina Färm ◽

Marianna Kemell ◽

Eero Santala ◽

Mikko Ritala ◽

Markku Leskelä

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Passivation Layer ◽

Vinyl Pyrrolidone ◽

Selective Area ◽

Layer Deposition ◽

Poly Vinyl Pyrrolidone

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Performance Variations of Amorphous-In2Ga2ZnO7 Thin-Film Transistors According to Thin Al2O3 Passivation Layer Deposited by Atomic Layer Deposition

ECS Meeting Abstracts ◽

10.1149/ma2012-02/42/3077 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Passivation Layer ◽

Layer Deposition ◽

Performance Variations

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Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2018.12.016 ◽

2019 ◽

Vol 358 ◽

pp. 968-975 ◽

Author(s):

Chia-Hsun Hsu ◽

Chun-Wei Huang ◽

Yun-Shao Cho ◽

Wan-Yu Wu ◽

Dong-Sing Wuu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Aluminum Oxide ◽

Atomic Layer ◽

Passivation Layer ◽

Efficiency Improvement ◽

Post Annealing ◽

Layer Deposition

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