AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition
2008 ◽
Vol 29
(8)
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pp. 838-840
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2011 ◽
Vol 14
(5)
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pp. G27
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Keyword(s):
2016 ◽
Vol 55
(3)
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pp. 032303
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2010 ◽
Vol 256
(16)
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pp. 5021-5024
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2014 ◽
Vol 145
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pp. 307-311
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2010 ◽
Vol 157
(1)
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pp. K10
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Keyword(s):
2019 ◽
Vol 358
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pp. 968-975
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Keyword(s):