AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

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Yue Hao ◽  
Jincheng Zhang ◽  
Jinyu Ni ◽  
Wei Mao ◽  
...  
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2020 ◽  
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Author(s):  
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Wei He ◽  
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Alexis Franquet ◽  
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2010 ◽  
Vol 157 (1) ◽  
pp. K10 ◽  
Author(s):  
Elina Färm ◽  
Marianna Kemell ◽  
Eero Santala ◽  
Mikko Ritala ◽  
Markku Leskelä

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