Secondary Structure-Dominated Layer-by-Layer Growth Mode of Protein Coatings

Langmuir ◽  
2021 ◽  
Author(s):  
Ruofei Lu ◽  
Xiaoqiang Zhang ◽  
Xinxiu Cheng ◽  
Xingjie Zan ◽  
Wujun Geng
Keyword(s):  
Secondary Structure ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Protein Coatings

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

scholarly journals Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 291
Author(s):  
Alberto Perrotta ◽  
Julian Pilz ◽  
Roland Resel ◽  
Oliver Werzer ◽  
Anna Maria Coclite
Keyword(s):  
Atomic Layer ◽  
Layer Growth ◽  
Growth Mode ◽  
Ex Situ ◽  
Native Oxide ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
X Ray ◽  
Crystallization Onset

Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a combination of spectroscopic ellipsometry and X-ray based techniques (diffraction, reflectivity, and fluorescence). Differently from the growth mode usually reported for thermal ALD ZnO (i.e., substrate-inhibited island growth), the effect of plasma surface activation resulted in a substrate-enhanced island growth. A transient region of accelerated island formation was found within the first 2 nm of deposition, resulting in the growth of amorphous ZnO as witnessed with grazing incidence X-ray diffraction. After the islands coalesced and a continuous layer formed, the first crystallites were found to grow, starting the layer-by-layer growth mode. High-temperature ALD ZnO layers were also investigated in terms of crystallization onset, showing that layers are amorphous up to a thickness of 3 nm, irrespective of the deposition temperature and growth orientation.

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

Effects of Stress on Step Energies and Surface Roughness

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 27-30 ◽  
Author(s):  
Christopher Roland
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Layer Growth ◽  
Growth Mode ◽  
Misfit Dislocations ◽  
Layer By Layer ◽  
Strained Layers ◽  
The Subject ◽  
Growth Changes

Strain relaxation in lattice-mismatched, heteroepitaxial systems is one of the classic problems in materials physics, which has gained new urgency with the increased applications of strained layers in microelectronic systems. In general both the structure and the integrity of the thin films are strongly influenced by strain. For instance it has long been known that under strain, the growth changes from an initial layer-by-layer growth mode to one with three-dimensional islanding. In the seminal works of van der Merwe, and Matthews and Blakeslee, this change in growth mode is explained in terms of the introduction of strain-relieving misfit dislocations, which appear when the film has reached some critical thickness. Recently it has become clear that this change in growth mode can take place even without the introduction of misfit dislocations. Such dislocation-free coherent islanding, or “roughening,” has been observed experimentally both in Ge/Si and in InGaAs/GaAs systems. Furthermore recent experiments show that in Ge/Si(100) systems, the thin films display a curious asymmetry with respect to the sign of the strain: Films under compression roughen by forming coherent islands while those under tension remain relatively smooth. A possible mechanism behind this strain-induced type of roughening is the subject of this article.

Oxygen Pressure Dependence of Morphology of Morphology of La2-xSrxCuO4 Ultra-Thin Films

1997 ◽  
Vol 11 (21n22) ◽  
pp. 981-987
Author(s):  
H. Q. Yin ◽  
T. Arakawa ◽  
Y. Kaneda ◽  
T. Yoshikawa ◽  
N. Haneji ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Dependence ◽  
Film Growth ◽  
Ambient Pressure ◽  
High Energy ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Island Growth ◽  
Experimental Conditions

La 2-x Sr x CuO 4 ultra-thin films with thickness 200 Å were fabricated by pulsed laser deposition method in oxygen ( O 2) atmosphere. The morphology of deposited films was investigated by reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The strong oxygen ambient pressure dependence of film morphology was observed. In high oxygen ambient pressure, the film growth is dominated by island growth mode. The results imply that the experimental conditions of oxygen ambient pressure and substrate temperature are critical for the layer-by-layer growth mode.

scholarly journals Controlling the growth mode of para-sexiphenyl (6P) on ZnO by partial fluorination

2014 ◽  
Vol 16 (47) ◽  
pp. 26084-26093 ◽  
Author(s):  
M. Sparenberg ◽  
A. Zykov ◽  
P. Beyer ◽  
L. Pithan ◽  
C. Weber ◽  
...  
Keyword(s):  
Growth Process ◽  
Layer Growth ◽  
Phase Coexistence ◽  
Growth Mode ◽  
Layer By Layer

Partial fluorination of para-sexiphenyl significantly alters the growth process on ZnO(101̄0) avoiding the phase coexistence of unsubstituted para-sexiphenyl and leading to smooth layer-by-layer growth.

LAYER GROWTH AND ALLOY FORMATION OF Ir ON Fe(100)

2001 ◽  
Vol 08 (01n02) ◽  
pp. 1-5 ◽  
Author(s):  
R. PFANDZELTER ◽  
H. WINTER
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Structure ◽  
Specular Reflection ◽  
Growth Front ◽  
Layer Growth ◽  
Growth Mode ◽  
Alloy Formation ◽  
Layer By Layer ◽  
Fast Ions

The growth mode and chemical structure of Ir deposited on Fe(100) are studied by specular reflection of fast ions and ion-induced Auger-electron spectroscopy. Temperatures below 500 K lead to a rough growth front, which is in agreement with a statistical growth of Ir atoms. For higher temperatures, we observe a layer-by-layer growth mode, where the Ir film is completely terminated by Fe atoms.

Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
S. Nishino ◽  
T. Nishiguchi ◽  
Y. Masuda ◽  
M. Sasaki ◽  
S. Ohshima
Keyword(s):  
Growth Temperature ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Bunching ◽  
Step Flow ◽  
Cvd Growth ◽  
The Difference ◽  
Step Flow Growth ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.

Sign in / Sign up

Export Citation Format

Share Document