scholarly journals Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 291
Author(s):  
Alberto Perrotta ◽  
Julian Pilz ◽  
Roland Resel ◽  
Oliver Werzer ◽  
Anna Maria Coclite
Keyword(s):  
Atomic Layer ◽  
Layer Growth ◽  
Growth Mode ◽  
Ex Situ ◽  
Native Oxide ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
X Ray ◽  
Crystallization Onset

Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a combination of spectroscopic ellipsometry and X-ray based techniques (diffraction, reflectivity, and fluorescence). Differently from the growth mode usually reported for thermal ALD ZnO (i.e., substrate-inhibited island growth), the effect of plasma surface activation resulted in a substrate-enhanced island growth. A transient region of accelerated island formation was found within the first 2 nm of deposition, resulting in the growth of amorphous ZnO as witnessed with grazing incidence X-ray diffraction. After the islands coalesced and a continuous layer formed, the first crystallites were found to grow, starting the layer-by-layer growth mode. High-temperature ALD ZnO layers were also investigated in terms of crystallization onset, showing that layers are amorphous up to a thickness of 3 nm, irrespective of the deposition temperature and growth orientation.

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

Oxygen Pressure Dependence of Morphology of Morphology of La2-xSrxCuO4 Ultra-Thin Films

1997 ◽  
Vol 11 (21n22) ◽  
pp. 981-987
Author(s):  
H. Q. Yin ◽  
T. Arakawa ◽  
Y. Kaneda ◽  
T. Yoshikawa ◽  
N. Haneji ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Dependence ◽  
Film Growth ◽  
Ambient Pressure ◽  
High Energy ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Island Growth ◽  
Experimental Conditions

La 2-x Sr x CuO 4 ultra-thin films with thickness 200 Å were fabricated by pulsed laser deposition method in oxygen ( O 2) atmosphere. The morphology of deposited films was investigated by reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The strong oxygen ambient pressure dependence of film morphology was observed. In high oxygen ambient pressure, the film growth is dominated by island growth mode. The results imply that the experimental conditions of oxygen ambient pressure and substrate temperature are critical for the layer-by-layer growth mode.

Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)

2006 ◽  
Vol 527-529 ◽  
pp. 1075-1078 ◽  
Author(s):  
Carey M. Tanner ◽  
Jun Lu ◽  
Hans Olof Blom ◽  
Jane P. Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect Transistors ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Ex Situ ◽  
Morphological Properties ◽  
Layer By Layer ◽  
Island Growth ◽  
X Ray

The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power metal-oxide-semiconductor field effect transistors. Stoichiometric HfO2 films were deposited on n-type 4H-SiC (0001) by atomic layer deposition (ALD) at substrate temperatures of 250-450°C. No significant interfacial layer formation was observed by in-situ X-ray photoelectron spectroscopy (XPS) and an abrupt interface was confirmed by high-resolution transmission electron microscopy (HRTEM). A temperature-dependent transition from amorphous layer-by-layer growth to crystalline three-dimensional island growth was identified by in-situ reflection high-energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). X-ray diffraction (XRD) confirmed the presence of monoclinic HfO2 domains in crystallized films.

scholarly journals Режимы роста пленок нитрида алюминия на гибридных подложках SiC/Si(111)

2022 ◽  
Vol 64 (1) ◽  
pp. 117
Author(s):  
А.А. Корякин ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Ш.Ш. Шарофидинов
Keyword(s):  
Aluminum Nitride ◽  
Growth Mechanism ◽  
Layer Growth ◽  
Nucleation Mechanism ◽  
Hydride Vapor Phase Epitaxy ◽  
Nitride Film ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
Hybrid Substrates

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

Initial Growth and morphology of Ultrathin Magnetic Films Studied Using Scanning Tunneling Microscopy.

1993 ◽  
Vol 313 ◽  
Author(s):  
David D. Chambliss ◽  
K.E. Johnson ◽  
K. Kalki ◽  
S. Chiang ◽  
R.J. Wilson
Keyword(s):  
Magnetic Films ◽  
Layer Growth ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
Tunneling Microscopy ◽  
High Coverage ◽  
Local Structures ◽  
Low Coverage

ABSTRACTThe room-temperature growth of Fe on Cu(100) has been studied using the scanning tunneling Microscope (STM) to determine low-coverage growth mode and local structures related to the FCC-BCC structural transformation. Results for submonolayer deposition demonstrate an initial interchange of deposited Fe atoms with substrate Cu. This leads to a highly rough Fe-Cu interface and growth characteristics that for different experimental techniques can resemble 3-D island growth or layer-by-layer growth. For a thickness ∼14 Monolayers, the FCC-BCC transition is observed to occur via the formation of fairly large martensitic grains, rather than by a change in atomic aggregation. The implications of the instability of FCC-Fe, as evident in both low- and high-coverage data, are considered.

Initial Growth Mode of GaN Film on Stepped Sapphire

2007 ◽  
Vol 124-126 ◽  
pp. 61-64
Author(s):  
Min Su Yi ◽  
Tae Sik Cho ◽  
Hyun Hwi Lee
Keyword(s):  
Sapphire Substrate ◽  
Early Stage ◽  
Growth Mode ◽  
Atomic Step ◽  
Layer By Layer ◽  
Initial Growth ◽  
Nucleation Layer ◽  
X Ray ◽  
Metal Organic ◽  
Gan Film

The initial GaN growth mode on stepped sapphires by plasma enhanced metal organic molecular beam epitaxy (PEMOMBE) has been analyzed using in-situ, real time synchrotron x-ray diffraction and x-ray absorption. The sapphire substrate annealed at high temperature had flat terraces and regular atomic steps. The crystal quality and the vicinal angle of sapphire substrate had an effect on the width of terraces and the step arrangement. The initial growth mode of the GaN film on the regular atomic step (AS) surface was the layer-by-layer mode and changed to the 3D growth mode within 2 bilayer thickness. In the meanwhile, the growth mode of the GaN film grown on the sapphire with random roughness (RR) surface made the flat surface in the early stage and changed the 3D growth mode. As increasing the film thickness, the nucleation layer grows strain-free hexagonal GaN on stepped sapphires

scholarly journals Growth mode study of MgCl2 on Au foil and Si (111) 7x7, under Ultra High Vacuum by XPS

2011 ◽  
Vol 1 (1) ◽  
pp. 13-16
Author(s):  
S. Karakalos
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Magnesium Chloride ◽  
High Vacuum ◽  
Layer Growth ◽  
Ultra High Vacuum ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray ◽  
Reconstructed Surface

The growth mode of MgCl2 on Au foil and Si (111) 7x7 reconstructed surface under UHV conditions, was investigated by X-ray Photoelectron Spectroscopy (XPS). Magnesium chloride grows with the Frank-van der Merve, (FM) growth mode on the Au foil. On Si surface there is evidence for the layer by layer growth of MgCl2 but leaving uncovered silicon areas at the first steps of deposition due to the Si (111)7x7 surface roughness.

Segregation and Interdiffusion of in Atoms in GaAs/InAs/GaAs Heterostructures

1993 ◽  
Vol 312 ◽  
Author(s):  
T. Kawai ◽  
H. Yonezu ◽  
Y. Ogasawara ◽  
D. Saito ◽  
K. Pak
Keyword(s):  
Growth Temperature ◽  
Three Dimensional ◽  
Film Surface ◽  
Growth Direction ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Island Growth ◽  
Alas Layer ◽  
Secondary Ion

AbstractThe segregation and interdiffusion of In atoms in the GaAs/InAs/GaAs heterostructures were investigated by secondary ion mass spectroscopy. When the 1 ML thick InAs layer was grown in a layer-by-layer growth mode with no dislocations, the segregation of In atoms became marked with the increase of the growth temperature. However, the segregation was observed even at relatively low growth temperature of 400°C in molecular beam epitaxy. It was found that the segregation was markedly enhanced by dislocations near the heterointerface when the thick InAs layers were grown in a three-dimensional island growth mode. The interdiffusion of In atoms toward the growth direction occurred after thermal annealing, which could be assisted by vacancies propagating from the film surface into epilayer. It became apparent that the interdiffusion was effectively suppressed by a thin AlAs layer inserted in the GaAs cap layer.

Atomic Layer Deposition of SrO: Substrate and Temperature Effects

2012 ◽  
Vol 1494 ◽  
pp. 179-183
Author(s):  
Han Wang ◽  
Xiaoqiang Jiang ◽  
Brian G. Willis
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Ex Situ ◽  
Hydroxyl Groups ◽  
Initial Growth ◽  
X Ray ◽  
Steady Growth ◽  
Layer Deposition

ABSTRACTThe atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

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