Polymer Pen Lithography with Lipids for Large-Area Gradient Patterns

Langmuir ◽  
2017 ◽  
Vol 33 (35) ◽  
pp. 8739-8748 ◽  
Author(s):  
Ravi Kumar ◽  
Ainhoa Urtizberea ◽  
Souvik Ghosh ◽  
Uwe Bog ◽  
Quinn Rainer ◽  
...  
Polymers ◽  
2019 ◽  
Vol 11 (5) ◽  
pp. 891 ◽  
Author(s):  
Alessandro Angelin ◽  
Uwe Bog ◽  
Ravi Kumar ◽  
Christof M. Niemeyer ◽  
Michael Hirtz

Lipid-based membranes play crucial roles in regulating the interface between cells and their external environment, the communication within cells, and cellular sensing. To study these important processes, various lipid-based artificial membrane models have been developed in recent years and, indeed, large-area arrays of supported lipid bilayers suit the needs of many of these studies remarkably well. Here, the direct-write scanning probe lithography technique called polymer pen lithography (PPL) was used as a tool for the creation of lipid micropatterns over large areas via polymer-stamp-mediated transfer of lipid-containing inks onto glass substrates. In order to better understand and control the lipid transfer in PPL, we conducted a systematic study of the influence of dwell time (i.e., duration of contact between tip and sample), humidity, and printing pressure on the outcome of PPL with phospholipids and discuss results in comparison to the more often studied dip-pen nanolithography with phospholipids. This is the first systematic study in phospholipid printing with PPL. Biocompatibility of the obtained substrates with up to two different ink compositions was demonstrated. The patterns are suitable to serve as a platform for mast cell activation experiments.


2015 ◽  
Vol 65 (6) ◽  
pp. 615-620
Author(s):  
Seung-Hoon LEE ◽  
Mi-Sun YANG ◽  
Jae-Won JANG* ◽  
Chihong MIN ◽  
Yongkyun KIM

2013 ◽  
Vol 8 (12) ◽  
pp. 2548-2560 ◽  
Author(s):  
Daniel J Eichelsdoerfer ◽  
Xing Liao ◽  
Maria D Cabezas ◽  
William Morris ◽  
Boya Radha ◽  
...  

2015 ◽  
Vol 2 (1) ◽  
Author(s):  
Soma Biswas ◽  
Falko Brinkmann ◽  
Michael Hirtz ◽  
Harald Fuchs

AbstractWe present a direct way of patterning CdSe/ ZnS quantum dots by dip-pen nanolithography and polymer pen lithography. Mixtures of cholesterol and phospholipid 1,2-dioleoyl-sn-glycero-3 phosphocholine serve as biocompatible carrier inks to facilitate the transfer of quantum dots from the tips to the surface during lithography. While dip-pen nanolithography of quantum dots can be used to achieve higher resolution and smaller pattern features (approximately 1 μm), polymer pen lithography is able to address intermediate pattern scales in the low micrometre range. This allows us to combine the advantages of micro contact printing in large area and massive parallel patterning, with the added flexibility in pattern design inherent in the DPN technique.


Nanoscale ◽  
2014 ◽  
Vol 6 (2) ◽  
pp. 749-752 ◽  
Author(s):  
Jin Wu ◽  
Xiaoli Zan ◽  
Shaozhou Li ◽  
Yayuan Liu ◽  
Chenlong Cui ◽  
...  

Author(s):  
G. Lehmpfuhl

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.


Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.


Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.


Author(s):  
W. Lo ◽  
J.C.H. Spence ◽  
M. Kuwabara

Work on the integration of STM with REM has demonstrated the usefulness of this combination. The STM has been designed to replace the side entry holder of a commercial Philips 400T TEM. It allows simultaneous REM imaging of the tip/sample region of the STM (see fig. 1). The REM technique offers nigh sensitivity to strain (<10−4) through diffraction contrast and high resolution (<lnm) along the unforeshortened direction. It is an ideal technique to use for studying tip/surface interactions in STM.The elastic strain associated with tunnelling was first imaged on cleaved, highly doped (S doped, 5 × 1018cm-3) InP(110). The tip and surface damage observed provided strong evidence that the strain was caused by tip/surface contact, most likely through an insulating adsorbate layer. This is consistent with the picture that tunnelling in air, liquid or ordinary vacuum (such as in a TEM) occurs through a layer of contamination. The tip, under servo control, must compress the insulating contamination layer in order to get close enough to the sample to tunnel. The contaminant thereby transmits the stress to the sample. Elastic strain while tunnelling from graphite has been detected by others, but never directly imaged before. Recent results using the STM/REM combination has yielded the first direct evidence of strain while tunnelling from graphite. Figure 2 shows a graphite surface elastically strained by the STM tip while tunnelling (It=3nA, Vtip=−20mV). Video images of other graphite surfaces show a reversible strain feature following the tip as it is scanned. The elastic strain field is sometimes seen to extend hundreds of nanometers from the tip. Also commonly observed while tunnelling from graphite is an increase in the RHEED intensity of the scanned region (see fig.3). Debris is seen on the tip and along the left edges of the brightened scan region of figure 4, suggesting that tip abrasion of the surface has occurred. High resolution TEM images of other tips show what appear to be attached graphite flakes. The removal of contamination, possibly along with the top few layers of graphite, seems a likely explanation for the observed increase in RHEED reflectivity. These results are not inconsistent with the “sliding planes” model of tunnelling on graphite“. Here, it was proposed that the force due to the tunnelling probe acts over a large area, causing shear of the graphite planes when the tip is scanned. The tunneling current is then modulated as the planes of graphite slide in and out of registry. The possiblity of true vacuum tunnelling from the cleaned graphite surface has not been ruled out. STM work function measurements are needed to test this.


1914 ◽  
Vol 77 (1988supp) ◽  
pp. 82-83
Author(s):  
Herbert E. Ives
Keyword(s):  

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