scholarly journals High-Performance Titanium Oxynitride Thin Films for Electrocatalytic Water Oxidation

2020 ◽  
Vol 3 (9) ◽  
pp. 8366-8374
Author(s):  
Nikhil Reddy Mucha ◽  
Jacob Som ◽  
Jonghyun Choi ◽  
Surabhi Shaji ◽  
Ram K. Gupta ◽  
...  
2019 ◽  
Vol 7 (19) ◽  
pp. 16651-16658 ◽  
Author(s):  
Suraj Gupta ◽  
Harshada Jadhav ◽  
Sucharita Sinha ◽  
Antonio Miotello ◽  
Maulik K. Patel ◽  
...  

2019 ◽  
Vol 55 (34) ◽  
pp. 5017-5020 ◽  
Author(s):  
Wai Ling Kwong ◽  
Cheng Choo Lee ◽  
Andrey Shchukarev ◽  
Johannes Messinger

Low-concentration cobalt doping improves the intrinsic activity and charge transport of hematite thin-film electrocatalyst for high-performance acidic water oxidation.


Author(s):  
Shuya Zhao ◽  
Yurui Xue ◽  
Zhongqiang Wang ◽  
Zhiqiang Zheng ◽  
Xiaoyu Luan ◽  
...  

Developing highly active, stable and low-cost electrocatalysts capable of an efficient oxygen evolution reaction (OER) is urgent and challenging.


2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).


Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


Sign in / Sign up

Export Citation Format

Share Document