Interface Study on the Effect of Carbon and Boron Carbide Diffusion Barriers in Sc/Si Multilayer System

2020 ◽  
Vol 12 (22) ◽  
pp. 25400-25408 ◽  
Author(s):  
Jingtao Zhu ◽  
Jiayi Zhang ◽  
Hui Jiang ◽  
Jie Zhu ◽  
Shengming Zhu ◽  
...  
Keyword(s):  
Boron Carbide ◽  
Diffusion Barriers ◽  
Multilayer System ◽  
Interface Study

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Dynamic X-ray imaging of the penetration of boron carbide

2000 ◽  
Vol 10 (PR9) ◽  
pp. Pr9-583-Pr9-588 ◽  
Author(s):  
W. A. Gooch ◽  
M. S. Burkins ◽  
G. Hauver ◽  
P. Netherwood ◽  
R. Benck
Keyword(s):  
Boron Carbide ◽  
X Ray ◽  
X Ray Imaging

Perancangan Website Sekolah Pada Subsystem User Interface (Study Kasus di Pesantren Persis 99 Rancabango)

2012 ◽  
Vol 9 (2) ◽  
pp. 338-348
Author(s):  
Muhammad Irsyad ◽  
Cepy Slamet ◽  
Ate Susanto ◽  
Keyword(s):  
User Interface ◽  
Interface Study

Credit Crime Detection By Using Multilayer System

2012 ◽  
Vol 2 (7) ◽  
pp. 177-180
Author(s):  
G ANIL KUMAR G ANIL KUMAR ◽  
◽  
D VENKATESH D VENKATESH ◽  
KANTE RAMESH
Keyword(s):  
Multilayer System ◽  
Crime Detection

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

PLASMA SPRAYING OF BORON CARBIDE USING TERNARY GAS MIXTURES

2010 ◽  
Vol 14 (4) ◽  
pp. 379-388
Author(s):  
S. Janisson ◽  
Armelle Vardelle ◽  
Michel Vardelle ◽  
Pierre Fauchais ◽  
E. Meillot
Keyword(s):  
Boron Carbide ◽  
Plasma Spraying ◽  
Gas Mixtures

Effect of High Temperature on Wear Behavior of Stir Cast Aluminium/Boron Carbide Composites

2020 ◽  
Vol 22 (4) ◽  
pp. 1031-1046
Author(s):  
X. Canute ◽  
M. C. Majumder
Keyword(s):  
High Temperature ◽  
Wear Rate ◽  
Boron Carbide ◽  
Wear Behavior ◽  
Base Alloy ◽  
Weight Fraction ◽  
Sliding Velocity ◽  
Wear Properties ◽  
High Temperature Wear ◽  
The Matrix

AbstractThe need for development of high temperature wear resistant composite materials with superior mechanical properties and tribological properties is increasing significantly. The high temperature wear properties of aluminium boron carbide composites was evaluated in this investigation. The effect of load, sliding velocity, temperature and reinforcement percentage on wear rate was determined by the pin heating method using pin heating arrangement. The size and structure of base alloy particles change considerably with an increase of boron carbide particles. The wettability and interface bonding between the matrix and reinforcement enhanced by the addition of potassium flurotitanate. ANOVA technique was used to study the effect of input parameters on wear rate. The investigation reveals that the load had higher significance than sliding velocity, temperature and weight fraction. The pin surface was studied with a high-resolution scanning electron microscope. Regression analysis revealed an extensive association between control parameters and response. The developed composites can be used in the production of automobile parts requiring high wear, frictional and thermal resistance.

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