Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors
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Flexible light weight In2O3-based source-gated transistors are achieved with high gain, fast saturation and low power consumption.
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2012 ◽
Vol 12
(7)
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pp. 5543-5546
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2008 ◽
Vol 51
(2)
◽
pp. 382-384
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