Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21610-21616
Author(s):  
Dingwei Li ◽  
Momo Zhao ◽  
Kun Liang ◽  
Huihui Ren ◽  
Quantan Wu ◽  
...  

Flexible light weight In2O3-based source-gated transistors are achieved with high gain, fast saturation and low power consumption.

1991 ◽  
Vol 69 (3-4) ◽  
pp. 177-179
Author(s):  
Langis Roy ◽  
Malcolm G. Stubbs ◽  
James S. Wight

The design and performance of a high-gain, monolithic, broadband amplifier with extremely low power consumption are described. The amplifier, fabricated using a 0.5 μm GaAs depletion-mode MESFET (metal semiconductor field effect transistor) process, utilizes very small gate width devices to achieve a measured gain of 19 dB and a 0.1 to 2.1 GHz bandwidth with only 63 mW dc power dissipation. This is the lowest power consumption broadband MMIC (monolithic microwave integrated circuit) reported to date and is intended for mobile radio applications.


2020 ◽  
Vol 12 (22) ◽  
pp. 25000-25010
Author(s):  
Jae Cheol Shin ◽  
Sung Min Kwon ◽  
Jingu Kang ◽  
Seong Pil Jeon ◽  
Jae-Sang Heo ◽  
...  

Chemosensors ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 41
Author(s):  
Hao Zeng ◽  
Guozhu Zhang ◽  
Kazuki Nagashima ◽  
Tsunaki Takahashi ◽  
Takuro Hosomi ◽  
...  

During the past two decades, one–dimensional (1D) metal–oxide nanowire (NW)-based molecular sensors have been witnessed as promising candidates to electrically detect volatile organic compounds (VOCs) due to their high surface to volume ratio, single crystallinity, and well-defined crystal orientations. Furthermore, these unique physical/chemical features allow the integrated sensor electronics to work with a long-term stability, ultra-low power consumption, and miniature device size, which promote the fast development of “trillion sensor electronics” for Internet of things (IoT) applications. This review gives a comprehensive overview of the recent studies and achievements in 1D metal–oxide nanowire synthesis, sensor device fabrication, sensing material functionalization, and sensing mechanisms. In addition, some critical issues that impede the practical application of the 1D metal–oxide nanowire-based sensor electronics, including selectivity, long-term stability, and low power consumption, will be highlighted. Finally, we give a prospective account of the remaining issues toward the laboratory-to-market transformation of the 1D nanostructure-based sensor electronics.


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