Thermoelectric Properties and Low-Energy Carrier Filtering by Mo Microparticle Dispersion in an n-Type (CuI)0.003Bi2(Te,Se)3 Bulk Matrix

2020 ◽  
Vol 12 (34) ◽  
pp. 38076-38084 ◽  
Author(s):  
Hyunyong Cho ◽  
Song Yi Back ◽  
Jae Hyun Yun ◽  
Seokyeong Byeon ◽  
Hyungyu Jin ◽  
...  
Author(s):  
S. Winnerl ◽  
J. C. Konig-Otto ◽  
M. Mittendorff ◽  
A. Pashkin ◽  
T. Venanzi ◽  
...  

2020 ◽  
Vol 49 (44) ◽  
pp. 15883-15894
Author(s):  
Sanyukta Ghosh ◽  
Gyan Shankar ◽  
Anirudha Karati ◽  
Gerda Rogl ◽  
Peter Rogl ◽  
...  

The dispersion of GaSb and InSb nanoinclusions in In-filled Co4Sb12 results in low lattice thermal conductivity and high thermoelectric performance.


2017 ◽  
Vol 19 (36) ◽  
pp. 24886-24895 ◽  
Author(s):  
Manju Bala ◽  
Srashti Gupta ◽  
Sanjeev K. Srivastava ◽  
Sankarakumar Amrithapandian ◽  
Tripurari S. Tripathi ◽  
...  

We report that a nanostructured CoSb3 thin film in a single phase can be synthesized by ion beam processing of Co/Sb bilayer thin films with better thermoelectric properties.


2015 ◽  
Vol 14 (4) ◽  
pp. 055-066
Author(s):  
Mirosława Górecka

In the introduction of the paper, the term of low energy consuming building construction and the essence of its realization on rural areas are explained. The basic reasons of building of low energy consuming houses were detailed, such as: the protection of natural environment of rural areas, among others through establishing ecological family farms, reduction of heating costs of rural buildings situated in an open area (belonging mainly to farmers’ families); the possibility of application of unconventional energy sources supporting systems which supply a conventional energy carrier, the systems being often unreliable, ineffective and expensive for the consumers.


MRS Bulletin ◽  
2006 ◽  
Vol 31 (3) ◽  
pp. 218-223 ◽  
Author(s):  
Apparao M. Rao ◽  
Xiaohua Ji ◽  
Terry M. Tritt

AbstractOver a decade ago, Dresselhaus predicted that low-dimensional systems would one day serve as a route to enhanced thermoelectric performance.In this article, recent results in the thermoelectric properties of nanowires and nanotubes are discussed. Various synthesis techniques will be presented, including chemical vapor deposition for the growth of thermoelectric nanostructures in templated alumina.Electrical transport measurements of carbon nanostructures, such as resistivity and thermopower, have revealed some very interesting thermoelectric properties.Challenges still remain concerning the measurement of individual nanostructures such as nanowires.Much work has been performed on the thermoelectric properties of carbon nanotubes, and these results will be highlighted.In addition, routes for enhanced thermoelectric materials have focused on incorporating nanostructures within the bulk materials.The role of these “hybrid composite structures” based on nanomaterials incorporated into the bulk matrix and the potential for enhanced performance are discussed.


2000 ◽  
Author(s):  
F. C. Wessling ◽  
L. S. Stodieck ◽  
A. Hoehn ◽  
S. Woodard ◽  
S. O’Brien ◽  
...  

Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.


Author(s):  
G. G. Hembree ◽  
Luo Chuan Hong ◽  
P.A. Bennett ◽  
J.A. Venables

A new field emission scanning transmission electron microscope has been constructed for the NSF HREM facility at Arizona State University. The microscope is to be used for studies of surfaces, and incorporates several surface-related features, including provision for analysis of secondary and Auger electrons; these electrons are collected through the objective lens from either side of the sample, using the parallelizing action of the magnetic field. This collimates all the low energy electrons, which spiral in the high magnetic field. Given an initial field Bi∼1T, and a final (parallelizing) field Bf∼0.01T, all electrons emerge into a cone of semi-angle θf≤6°. The main practical problem in the way of using this well collimated beam of low energy (0-2keV) electrons is that it is travelling along the path of the (100keV) probing electron beam. To collect and analyze them, they must be deflected off the beam path with minimal effect on the probe position.


Author(s):  
G.F. Bastin ◽  
H.J.M. Heijligers ◽  
J.M. Dijkstra

For the calculation of X-ray intensities emitted by elements present in multi-layer systems it is vital to have an accurate knowledge of the x-ray ionization vs. mass-depth (ϕ(ρz)) curves as a function of accelerating voltage and atomic number of films and substrate. Once this knowledge is available the way is open to the analysis of thin films in which both the thicknesses as well as the compositions can usually be determined simultaneously.Our bulk matrix correction “PROZA” with its proven excellent performance for a wide variety of applications (e.g., ultra-light element analysis, extremes in accelerating voltage) has been used as the basis for the development of the software package discussed here. The PROZA program is based on our own modifications of the surface-centred Gaussian ϕ(ρz) model, originally introduced by Packwood and Brown. For its extension towards thin film applications it is required to know how the 4 Gaussian parameters α, β, γ and ϕ(o) for each element in each of the films are affected by the film thickness and the presence of other layers and the substrate.


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