Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

ACS Nano ◽  
2021 ◽  
Author(s):  
Xia Liu ◽  
Arnob Islam ◽  
Ning Yang ◽  
Bradley Odhner ◽  
Mary Anne Tupta ◽  
...  
Keyword(s):  
Field Effect ◽  
Laser Annealing ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Logic Circuits ◽  
Scanning Laser

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Full Range ◽  
Logic Circuits ◽  
Double Gate

Vertically Stacked Complementary Organic Field-Effect Transistors and Logic Circuits Fabricated by Inkjet Printing

2016 ◽  
Vol 2 (7) ◽  
pp. 1600046 ◽  
Author(s):  
Jimin Kwon ◽  
Yasunori Takeda ◽  
Kenjiro Fukuda ◽  
Kilwon Cho ◽  
Shizuo Tokito ◽  
...  
Keyword(s):  
Inkjet Printing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuits ◽  
Organic Field Effect Transistors

Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors

2021 ◽  
Vol 32 (50) ◽  
pp. 505702
Author(s):  
Young Gyu You ◽  
Dong Ho Shin ◽  
Jong Hwa Ryu ◽  
E E B Campbell ◽  
Hyun-Jong Chung ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Passivation Layer

Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

2007 ◽  
Vol 544-545 ◽  
pp. 753-756
Author(s):  
In Jae Back ◽  
Su Cheol Gong ◽  
Hun Seoung Lim ◽  
Ik Sub Shin ◽  
Seoung Woo Kuk ◽  
...  
Keyword(s):  
Active Layer ◽  
Glass Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Semiconductor Films ◽  
Insulation Property ◽  
Ito Glass ◽  
Lower Mobility

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

Sign in / Sign up

Export Citation Format

Share Document