Ternary Alloys Enable Efficient Production of Methoxylated Chemicals via Selective Electrocatalytic Hydrogenation of Lignin Monomers

Author(s):  
Tao Peng ◽  
Taotao Zhuang ◽  
Yu Yan ◽  
Jin Qian ◽  
Graham R. Dick ◽  
...  
2019 ◽  
Vol 21 (22) ◽  
pp. 6210-6219 ◽  
Author(s):  
Xiaotong H. Chadderdon ◽  
David J. Chadderdon ◽  
Toni Pfennig ◽  
Brent H. Shanks ◽  
Wenzhen Li

Electrocatalytic hydrogenation and oxidation of 5-(hydroxymethyl)furfural in one paired electrolyzer produces two biorenewable monomers with a combined electron efficiency of 187%.


Author(s):  
T. S. Kuan

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.


Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.


Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.


2020 ◽  
Vol 12 (12) ◽  
pp. 4-9
Author(s):  
Pavel A. BUTYRIN ◽  

The historical context in which the State Plan for Electrification of Russia (GOELRO) was developed, establishment of the GOELRO Commission, the GOELRO Plan content, the specific features of its implementation, and the role of the plan in the soviet period of Russia’s history are considered. Attention is paid to the electrification plants of other countries and territories of all inhabited continents, and to the participation of states in the electrification of countries and regions with small-scale and agricultural production in the 1920 s. The specific features pertinent to the electrification of the Russian Socialist Federative Soviet Republic are pointed out, namely, low starting conditions (in 1923, the energy consumption per capita in Russia was 100 times lower than that in Norway), its being state-owned in nature and revolutionary in its purpose: to get done with the main upheavals in the country and to shift the national economy for fore efficient production. The role of V.I. Lenin and G.M. Krzhizhanovsky, who were the initiators of the electrification of Russia, is analyzed in detail. A conclusion is drawn about the need to study both the GOELRO Plan itself and the specific features and circumstances of its implementation within the framework of training modern specialists in electrical engineering.


2019 ◽  
Vol 73 (2) ◽  
pp. 120-122
Author(s):  
Naoki Negishi ◽  
Katsuhiko Nakahama ◽  
Nobuyuki Urata ◽  
Toshiaki Tanabe

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