Cu2I2Se6: A Metal–Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization

IEEE Electron Device Letters ◽

10.1109/led.2014.2331999 ◽

2014 ◽

Vol 35 (7) ◽

pp. 804-804

Keyword(s):

Energy Efficiency ◽

Renewable Energy ◽

Wide Bandgap ◽

Energy Utilization ◽

Special Issue ◽

Power Devices ◽

Wide Bandgap Semiconductor

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Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

Journal of Materials Chemistry C ◽

10.1039/d1tc02852a ◽

2021 ◽

Author(s):

Xiao Tang ◽

Kuanghui Li ◽

Che-Hao Liao ◽

Dongxing Zheng ◽

chen Liu ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Gas Sensors ◽

High Power ◽

Wide Bandgap ◽

Semiconductor Material ◽

Uv Detectors ◽

Wide Bandgap Semiconductor ◽

Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

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300°C Optical Communications

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2380-4491.2021.hitec.000013 ◽

2021 ◽

Vol 2021 (HiTEC) ◽

pp. 000013-000017

Author(s):

Emad Andarawis ◽

Cheng-Po (Paul) Chen ◽

Baokai Cheng

Keyword(s):

Optical Communications ◽

Dark Current ◽

Room Temperature ◽

Fiber Optic ◽

Extreme Temperature ◽

Wide Bandgap ◽

Fiber Optic Cable ◽

Optical Link ◽

Data Rates ◽

Light Coupling

Abstract A high temperature optical link capable of multi-megabits per second data rates at 300°C is presented. The system utilizes wide bandgap optical sources and detectors to achieve extreme temperature operation. Testing was conducted at multiple temperatures between room temperature and 325°C and at multiple light source currents. Light coupling into and out of a UV capable optical fiber was evaluated, and a model was created utilizing the test data of the photodiode dark current and the fiber optic cable insertion loss and attenuation and assess optical communications capability to 325°C and beyond.

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