Wafer-scale integration of stretchable semiconducting polymer microstructures via capillary gradient

AbstractOrganic semiconducting polymers have opened a new paradigm for soft electronics due to their intrinsic flexibility and solution processibility. However, the contradiction between the mechanical stretchability and electronic performances restricts the implementation of high-mobility polymers with rigid molecular backbone in deformable devices. Here, we report the realization of high mobility and stretchability on curvilinear polymer microstructures fabricated by capillary-gradient assembly method. Curvilinear polymer microstructure arrays are fabricated with highly ordered molecular packing, controllable pattern, and wafer-scale homogeneity, leading to hole mobilities of 4.3 and 2.6 cm2 V−1 s−1 under zero and 100% strain, respectively. Fully stretchable field-effect transistors and logic circuits can be integrated in solution process. Long-range homogeneity is demonstrated with the narrow distribution of height, width, mobility, on-off ratio and threshold voltage across a four-inch wafer. This solution-assembly method provides a platform for wafer-scale and reproducible integration of high-performance soft electronic devices and circuits based on organic semiconductors.

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Wafer-scale integration of stretchable semiconducting polymer microstructures via capillary gradient

10.21203/rs.3.rs-121537/v1 ◽

2020 ◽

Author(s):

Yuchen Qiu ◽

Bo Zhang ◽

Junchuan Yang ◽

Hanfei Gao ◽

Shuang Li ◽

...

Keyword(s):

Organic Semiconductors ◽

High Performance ◽

Field Effect Transistors ◽

Solution Process ◽

High Mobility ◽

New Paradigm ◽

Wafer Scale ◽

Assembly Method ◽

Polymer Microstructures ◽

Scale Integration

Abstract Organic semiconducting polymers have opened a new paradigm for soft electronics due to their intrinsic flexibility and solution processibility. However, the contradiction between the mechanical stretchability and electronic performances restricts the implementation of high-mobility polymers with rigid molecular backbone in highly deformable devices. Here, we report the realization of high electronic performance and high stretchability on curvilinear polymer microstructures fabricated by solution-processing capillary-gradient-mediated assembly method. Curvilinear polymer microstructure arrays are fabricated with highly ordered molecular packing, precisely controlled geometry and alignment, and wafer-scale homogeneity, leading to high hole mobilities of 4.3 and 2.6 cm2 V− 1 s− 1 under zero and 100% strain, respectively. Fully stretchable field-effect transistors and logic circuits can be integrated through all-solution process using assembled curvilinear microstructure semiconducting channels, organic dielectrics and carbon-nanotube electrodes. Based on these fully stretchable devices, 92% preservation of carrier mobility is realized after 1000 stretch-release cycle under 50% strain. Long-range homogeneity is demonstrated with the narrow distribution of height, width, mobility, on-off ratio and threshold voltage across a four-inch wafer. This solution-assembly method provides a platform for wafer-scale and reproducible integration of high-performance soft electronic devices and circuits based on conjugated organic semiconductors.

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Tailoring crystal polymorphs of organic semiconductors towards high-performance field-effect transistors

Chinese Chemical Letters ◽

10.1016/j.cclet.2016.06.023 ◽

2016 ◽

Vol 27 (8) ◽

pp. 1330-1338 ◽

Cited By ~ 16

Author(s):

Yong-Gang Zhen ◽

Huan-Li Dong ◽

Lang Jiang ◽

Wen-Ping Hu

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors

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2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

Materials Advances ◽

10.1039/d1ma00215e ◽

2021 ◽

Author(s):

Suman Yadav ◽

Shivani Sharma ◽

Satinder K Sharma ◽

Chullikkattil P. Pradeep

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Organic Thin Film ◽

Effect Transistor ◽

Solution Processable ◽

P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

npj 2D Materials and Applications ◽

10.1038/s41699-021-00280-7 ◽

2022 ◽

Vol 6 (1) ◽

Author(s):

Taikyu Kim ◽

Cheol Hee Choi ◽

Pilgyu Byeon ◽

Miso Lee ◽

Aeran Song ◽

...

Keyword(s):

Field Effect ◽

Physical Vapor Deposition ◽

High Performance ◽

Supply Voltage ◽

Field Effect Transistors ◽

Low Cost ◽

Three Dimensional ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

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Soft template assisted self-assembly: a general strategy toward two-dimensional molecular crystals for high-performance organic field-effect transistors

Journal of Materials Chemistry C ◽

10.1039/d1tc04307b ◽

2022 ◽

Author(s):

Xinzi Tian ◽

Jiarong Yao ◽

Siyu Guo ◽

Zhaofeng Wang ◽

Yanling Xiao ◽

...

Keyword(s):

Organic Semiconductors ◽

Self Assembly ◽

High Performance ◽

Field Effect Transistors ◽

Molecular Crystals ◽

Soft Template ◽

General Strategy ◽

Two Dimensional ◽

Organic Field Effect Transistors ◽

Intrinsic Properties

Two-dimensional molecular crystals (2DMCs) are highly desirable to probe the intrinsic properties in organic semiconductors and are promising candidates for constructing high-performance optoelectronic devices. Liquids such as water are favorable...

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Pyrene fused perylene diimides: synthesis, characterization and applications in organic field-effect transistors and optical limiting with high performance

Chemical Communications ◽

10.1039/c5cc00966a ◽

2015 ◽

Vol 51 (33) ◽

pp. 7156-7159 ◽

Cited By ~ 77

Author(s):

Xuejun Zhan ◽

Ji Zhang ◽

Sheng Tang ◽

Yuxuan Lin ◽

Min Zhao ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

High Mobility ◽

Optical Limiting ◽

Organic Field Effect Transistors ◽

Perylene Diimides

Pyrene fused PDI derivatives are unprecedentedly designed, with the bilateral one possessing a high mobility up to 1.13 cm2 V−1 s−1.

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Correction: Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors

New Journal of Chemistry ◽

10.1039/c8nj90083c ◽

2018 ◽

Vol 42 (19) ◽

pp. 16384-16384

Author(s):

Qian Liu ◽

Huabin Sun ◽

Chula Blaikie ◽

Chiara Caporale ◽

Sergei Manzhos ◽

...

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

Correction for ‘Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors’ by Qian Liu et al., New J. Chem., 2018, 42, 12374–12385.

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High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.1909932116 ◽

2019 ◽

Vol 117 (1) ◽

pp. 80-85 ◽

Cited By ~ 5

Author(s):

Tatsuyuki Makita ◽

Shohei Kumagai ◽

Akihito Kumamoto ◽

Masato Mitani ◽

Junto Tsurumi ◽

...

Keyword(s):

Single Crystal ◽

Organic Semiconductors ◽

High Performance ◽

Printed Electronics ◽

Electronic Device ◽

Molecular Layer ◽

High Mobility ◽

Building Blocks ◽

Solution Processed ◽

Transfer Method

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

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