scholarly journals H2O2Treatment of Electrochemically Deposited Cu2O Thin Films for Enhancing Optical Absorption

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Ying Song ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Fixed Temperature ◽  
Electrochemically Deposited ◽  
Oxygen Ratio ◽  
Copper Oxide Thin Film

Cu2O is considered to be promising as an absorber layer material of solar cells, but its band gap (about 2.1 eV) is larger than the optimum one (about 1.5 eV). CuO has a smaller band gap of about 1.35 eV. Therefore, we attempted to oxidize Cu2O using H2O2to increase oxygen ratio and decrease band gap. Cu2O thin films were deposited on indium-tin-oxide-coated glass from an aqueous solution containing CuSO4, lactic acid, and KOH by the galvanostatic electrochemical deposition at 40°C with current density of −1 mA/cm2. Then, the as-prepared copper oxide thin film was dipped in H2O2(30%) at fixed temperature to oxidize for some time. By the H2O2treatment at room temperature, the oxygen content was increased, and the band gap was decreased.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

2015 ◽  
Vol 344 ◽  
pp. 217-222 ◽  
Author(s):  
L. Álvarez-Fraga ◽  
F. Jiménez-Villacorta ◽  
J. Sánchez-Marcos ◽  
A. de Andrés ◽  
C. Prieto
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

A possible origin of room temperature ferromagnetism in Indium–Tin oxide thin film: Surface spin polarization and ferromagnetism

2011 ◽  
Vol 406 (17) ◽  
pp. 3166-3169 ◽  
Author(s):  
Bin Xia ◽  
Yu Wu ◽  
Hui Wen Ho ◽  
Chang Ke ◽  
Wen Dong Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Polarization ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Film Surface ◽  
Oxide Thin Film ◽  
Thin Film Surface ◽  
Surface Spin

Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer

2002 ◽  
Vol 415 (1-2) ◽  
pp. 272-275 ◽  
Author(s):  
J Tashiro ◽  
A Sasaki ◽  
S Akiba ◽  
S Satoh ◽  
T Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Si Substrates

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

scholarly journals Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films

2012 ◽  
Vol 22 (1) ◽  
pp. 1-6 ◽  
Author(s):  
D.B. Buchholz ◽  
D.E. Proffit ◽  
M.D. Wisser ◽  
T.O. Mason ◽  
R.P.H. Chang
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
Zinc Indium Tin Oxide

scholarly journals Growth of Copper Indium Telluride (Cuinte2) Thin Films Using Electrochemical Route for Photovoltaic Application

2012 ◽  
Vol 12 ◽  
pp. 318-323 ◽  
Author(s):  
Subash Adhikari ◽  
NB Chaure
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Elemental Composition ◽  
Indium Tin Oxide ◽  
Secondary Phase ◽  
Annealed Sample ◽  
X Ray ◽  
Copper Indium ◽  
Electrochemically Deposited ◽  
Indium Telluride

Copper indium di-telluride (CuInTe2; CIT) was electrochemically deposited onto indium tin oxide (ITO) substrate using aqueous medium at various electrodeposition conditions like temperature, pH, stirring rate and concentration of the samples. The resulting thin films were characterized using UV-Visible-NIR spectrophotometer, X-ray diffractometer, scanning electron microscopy and energy dispersive X-ray to find out energy band gap, structural properties, surface morphology and the elemental composition in the film respectively. The resulting films showed a polycrystalline nature with band gap varying from 1.27 to 1.89 eV. The elemental composition of the as deposited and annealed sample showed that the films were mostly copper and tellurium rich. The crystallinity of the films improved after annealing for 5 minutes at 350°C but the secondary phase like CuxTe and InxTe could not be recombined completely.DOI: http://dx.doi.org/10.3126/njst.v12i0.6519 Nepal Journal of Science and Technology 12 (2011) 318-323 

Preparation and Properties Indium Tin-Oxide Thin Films by RF Sputtered for Photodetectors

2008 ◽  
Vol 55-57 ◽  
pp. 769-772 ◽  
Author(s):  
I Srithanachai ◽  
K. Nutaman ◽  
A. Rerkratn ◽  
S. Niemcharoen ◽  
S. Supadech
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Electrical Characteristic ◽  
Rf Sputtering ◽  
Transparent Electrode ◽  
Glass Slide ◽  
X Ray ◽  
High Crystallization

This paper descript studying and preparation indium-tin oxide (ITO) thin film from method 90 wt.% In2O3 and 10 wt.% SnO2 formula target with 99.99% purity on glass slide by RF reactive sputtering method at room temperature. This paper, sputtering time 5, 15, 30 and 60 mins. Thin films ITO were measured crystallization, optical and electrical characteristic by an X-ray diffractometer (XRD), scan electron microscopy (SEM) , Four Point Probe and UV-VIS spectrophotometry. The results found that thin films which made from RF sputtering method had a high crystallization, order arrangement grain. Strong peak of XRD (400) and (441), low resistivity are 2.2 x 10-3, 4.4 x 10-3, 1 x 10-3 and 7 x 10-4 Ω-cm, transmittance are 82%, 84%, 87% and 89%, respectively. The overall experimental results identify that fabricated thin films ITO have good properties and is suitable for transparent electrode application. The ultimate goal is developing schottky photodetector.

Sign in / Sign up

Export Citation Format

Share Document