Formation of GaP nanocones and micro-mesas by metal-assisted chemical etching

Metal-assisted chemical etching (MaCE) of a (100) n-type GaP using patterned Pd catalysts in a mixed solution of HF and H2O2 at room temperature is reported for the first time.

Download Full-text

Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

Applied Physics Letters ◽

10.1063/1.5053219 ◽

2018 ◽

Vol 113 (22) ◽

pp. 222104 ◽

Cited By ~ 12

Author(s):

Munho Kim ◽

Hsien-Chih Huang ◽

Jeong Dong Kim ◽

Kelson D. Chabak ◽

Akhil Raj Kumar Kalapala ◽

...

Keyword(s):

Chemical Etching ◽

Room Temperature ◽

Metal Assisted Chemical Etching

Download Full-text

Photoluminescence and Structure of Chemically Etched Si

MRS Proceedings ◽

10.1557/proc-256-27 ◽

1991 ◽

Vol 256 ◽

Cited By ~ 3

Author(s):

S. Shih ◽

K. H. Jung ◽

T. Y. Hsieh ◽

J. Sarathy ◽

C. Tsai ◽

...

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Surface Morphology ◽

Chemical Etching ◽

Room Temperature ◽

Porous Si ◽

X Ray Diffraction ◽

X Ray ◽

First Time ◽

Scanning Electron

ABSTRACTWe demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.

Download Full-text

Influence of Fabrication Parameter on the Nanostructure of SiNWs under HF/AgNO3/Fe(NO3)3 Etching System

Materials Science Forum ◽

10.4028/www.scientific.net/msf.809-810.93 ◽

2014 ◽

Vol 809-810 ◽

pp. 93-98

Author(s):

Yong Yin Xiao ◽

Xiu Hua Chen ◽

Wen Hui Ma ◽

Shao Yuan Li ◽

Yu Ping Li ◽

...

Keyword(s):

Chemical Etching ◽

Room Temperature ◽

Etching Time ◽

Large Area ◽

One Step ◽

Fabrication Parameter ◽

Metal Assisted Chemical Etching ◽

Fabrication Parameters ◽

Oxidative Species ◽

Etching System

Large-area SiNWs has been successfully fabricated through one-step metal-assisted chemical etching process at room temperature. The effects of key fabrication parameters (AgNO3 concentration, Fe (NO3)3 concentration, and etching time) on the nanostructure SiNWs were carefully investigated by SEM, TEM, respectively. The results show that AgNO3 concentration and Fe (NO3)3 concentration play important roles to the lengths and arrangements of SiNWs arrays in one-step MACE. The morphological transition of Si surfaces from solid nanowires to porous nanowires can be found with increasing AgNO3 concentration and Fe (NO3)3 concentration, which indicates that the re-dissolved Ag+ would work as the main oxidative species for oxidizing the silicon substrate and forming SiNWs in the HF/ AgNO3/ Fe (NO3)3 etching system. The length of SiNWs is increased with increasing AgNO3 concentration from 0.005 mol/L to 0.02 mol/L and etching time, the chemical polish phoenomenon can be observed when the Fe (NO3)3 concentration increases to 0.5 mol/L. A novel mechanism is proposed to explain the formation of SiNWs in HF/ AgNO3/ Fe (NO3)3 solution.

Download Full-text

Metal-Assisted Plasma Etching of Silicon: A Liquid-Free Alternative to MACE

10.26434/chemrxiv.6128237 ◽

2018 ◽

Author(s):

Julia Sun ◽

Benjamin Almquist

Keyword(s):

Liquid Phase ◽

Plasma Etching ◽

Chemical Etching ◽

Gold Films ◽

Metallic Films ◽

Au Catalyst ◽

Feed Concentration ◽

Catalytic Activities ◽

Metal Assisted Chemical Etching ◽

Complex Nanostructures

For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. Of these, two of the most common are reactive ion etching in the gaseous phase and metal-assisted chemical etching (MACE) in the liquid phase. Though these two methods are highly established and characterized, there is a surprising scarcity of reports exploring the ability of metallic films to catalytically enhance the etching of silicon in dry plasmas via a MACE-like mechanism. Here, we discuss a metal-assisted plasma etch (MAPE) performed using patterned gold films to catalyze the etching of silicon in an SF6/O2 mixed plasma, selectively increasing the rate of etching by over 1000%. The degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration is characterized, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu. Finally, methods of controlling the etch process are briefly explored to demonstrate the potential for use as a liquid-free fabrication strategy.

Download Full-text

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.806.24 ◽

2019 ◽

Vol 806 ◽

pp. 24-29 ◽

Cited By ~ 1

Author(s):

Olga V. Volovlikova ◽

S.A. Gavrilov ◽

P.I. Lazarenko ◽

A.V. Kukin ◽

A.A. Dudin ◽

...

Keyword(s):

Refractive Index ◽

Treatment Duration ◽

Chemical Etching ◽

Visible Region ◽

High Light ◽

Silicon Films ◽

Black Silicon ◽

Metal Assisted Chemical Etching ◽

Light Absorptance

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

Download Full-text

Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

Nanoscale Research Letters ◽

10.1186/s11671-021-03524-z ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Yijie Li ◽

Nguyen Van Toan ◽

Zhuqing Wang ◽

Khairul Fadzli Bin Samat ◽

Takahito Ono

Keyword(s):

Electrical Conductivity ◽

Seebeck Coefficient ◽

Contact Resistance ◽

Power Factor ◽

Chemical Etching ◽

Porous Si ◽

Si Substrate ◽

Si Substrates ◽

Output Performance ◽

Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

Download Full-text

Room-temperature white and color-tunable afterglow by manipulating multi-mode triplet emissions

Journal of Materials Chemistry C ◽

10.1039/d0tc05816e ◽

2021 ◽

Vol 9 (9) ◽

pp. 3257-3263

Author(s):

Jianwei Liu ◽

Zhimin Ma ◽

Zewei Li ◽

Yan Liu ◽

Xiaohua Fu ◽

...

Keyword(s):

Room Temperature ◽

Single Component ◽

Color Tunable ◽

First Time ◽

Multi Mode

Two isomers pDCzPyCN and oDCzPyCN are designed and synthesized. Amazingly, oDCzPyCN manifest white afterglow at room temperature. This is the first time that single-component white afterglow has finally been realized.

Download Full-text

Dioxygen splitting at room temperature over distant binuclear transition metal centers in zeolites for direct oxidation of methane to methanol

Chemical Communications ◽

10.1039/d1cc00909e ◽

2021 ◽

Author(s):

Kinga Mlekodaj ◽

Mariia Lemishka ◽

Stepan Sklenak ◽

Jiri Dedecek ◽

Edyta Tabor

Keyword(s):

Transition Metal ◽

Room Temperature ◽

Direct Oxidation ◽

Metal Centers ◽

Oxidation Of Methane ◽

First Time

Here we demonstrate for the first time the splitting of dioxygen at RT over distant binuclear transition metal (M = Ni, Mn, and Co) centers stabilized in ferrierite zeolite. Cleaved...

Download Full-text