Cation exchange for thin film lead iodide perovskite interconversion

2016 ◽  
Vol 3 (1) ◽  
pp. 63-71 ◽  
Author(s):  
Giles E. Eperon ◽  
Clara E. Beck ◽  
Henry J. Snaith

We demonstrate that we can convert hybrid perovskites between methylammonium lead iodide (MAPbI3) and formamidinium lead iodide (FAPbI3) by immersion in solutions of MA or FA iodide at room temperature. The cations diffuse uniformly throughout the bulk films, forming an alloy rather than a bi-layer. Furthermore, this demonstrates good organic cation mobility in these materials.

2019 ◽  
Vol 7 (42) ◽  
pp. 13156-13160 ◽  
Author(s):  
Svetlana Sirotinskaya ◽  
Christian Fettkenhauer ◽  
Daichi Okada ◽  
Yohei Yamamoto ◽  
Doru C. Lupascu ◽  
...  

Introducing a modal system approach for the analytical perovskite thin-film trap physics evaluation. Our study confirms existing models for trap formation in MAPI, substantiating different defect states in the grain boundary and bulk regions.


Science ◽  
2021 ◽  
Vol 371 (6536) ◽  
pp. 1359-1364
Author(s):  
Wei Hui ◽  
Lingfeng Chao ◽  
Hui Lu ◽  
Fei Xia ◽  
Qi Wei ◽  
...  

The stabilization of black-phase formamidinium lead iodide (α-FAPbI3) perovskite under various environmental conditions is considered necessary for solar cells. However, challenges remain regarding the temperature sensitivity of α-FAPbI3 and the requirements for strict humidity control in its processing. Here we report the synthesis of stable α-FAPbI3, regardless of humidity and temperature, based on a vertically aligned lead iodide thin film grown from an ionic liquid, methylamine formate. The vertically grown structure has numerous nanometer-scale ion channels that facilitate the permeation of formamidinium iodide into the lead iodide thin films for fast and robust transformation to α-FAPbI3. A solar cell with a power-conversion efficiency of 24.1% was achieved. The unencapsulated cells retain 80 and 90% of their initial efficiencies for 500 hours at 85°C and continuous light stress, respectively.


2016 ◽  
Vol 1 (4) ◽  
pp. 880-887 ◽  
Author(s):  
Alexander N. Beecher ◽  
Octavi E. Semonin ◽  
Jonathan M. Skelton ◽  
Jarvist M. Frost ◽  
Maxwell W. Terban ◽  
...  

2019 ◽  
Vol 1 (8) ◽  
pp. 2999-3008 ◽  
Author(s):  
Rajan Kumar Singh ◽  
Sudipta Som ◽  
Somrita Dutta ◽  
Neha Jain ◽  
Mei-Tsun Kuo ◽  
...  

We present a facile room temperature synthesis of CH3NH3Pb1−xMnxI3 perovskite quantum dots (PQDs) substituting manganese (Mn2+) at the lead (Pb2+) sites to minimize environmental pollution and make it commercially feasible.


Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 162
Author(s):  
Ryan Taoran Wang ◽  
Elton Enchong Liu ◽  
Alex Fan Xu ◽  
Lory Wenjuan Yang ◽  
Jason Yuanzhe Chen ◽  
...  

Extra peaks have constantly been observed in the X-ray diffraction measurement for the CH3NH3PbI3 film. Such mysteries have now been uncovered in this paper, in which powder X-ray diffraction, in situ X-ray diffraction, and scanning electron microscopy measurements were conducted, and these peaks were attributed to the ethylammonium lead iodide (CH3CH2NH3PbI3/EAPbI3). It was found that the formation of EAPbI3 was triggered by the breakdown of N, N-dimethylformamide (DMF), which was adopted as the solvent in the preparation of the precursor solutions. EAPbI3 was generated by the organic cation exchange reaction in the subsequent annealing process. A simple solution for this problem is proposed in this paper as well, which would hopefully help the community to eradicate this impurity.


2020 ◽  
Vol 384 (14) ◽  
pp. 126278 ◽  
Author(s):  
Sayantan Sil ◽  
Homnath Luitel ◽  
Joydeep Dhar ◽  
Mahuya Chakrabarti ◽  
Partha Pratim Ray ◽  
...  

Crystals ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 539 ◽  
Author(s):  
Jeoungmin Ji ◽  
Farjana Haque ◽  
Nhu Thi To Hoang ◽  
Mallory Mativenga

We report clear room temperature ambipolar transport in ambient-air processed methylammonium lead iodide (MAPbI3) thin-film transistors (TFTs) with aluminum oxide gate-insulators and indium-zinc-oxide source/drain electrodes. The high ionicity of the MAPbI3 leads to p-type and n-type self-doping, and depending on the applied bias we show that simultaneous or selective transport of electrons and/or holes is possible in a single MAPbI3 TFT. The electron transport (n-type), however, is slightly more pronounced than the hole transport (p-type), and the respective channel resistances range from 5–11 and 44–55 MΩ/μm. Both p-type and n-type TFTs show good on-state characteristics for low driving voltages. It is also shown here that the on-state current of the n-type and p-type TFTs is highest in the slightly PbI2-rich and MAI-rich films, respectively, suggesting controllable n-type or p-type transport by varying precursor ratio.


Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1852
Author(s):  
Fatemeh Khorramshahi ◽  
Arash Takshi

Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI3) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm2 V−1 s−1. This study is expected to contribute to the development of MAPbI3 flexible phototransistors.


2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.


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