Leakage current characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-oxide-semiconductor capacitor

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83837-83842 ◽  
Author(s):  
Sk Masiul Islam ◽  
K. Sarkar ◽  
P. Banerji ◽  
Kalyan Jyoti Sarkar ◽  
Biswajit Pal
Keyword(s):  
Quantum Dot ◽  
Leakage Current ◽  
Carrier Transport ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Embedded Devices ◽  
Mos Capacitors ◽  
Current Characteristics ◽  
Inas Quantum Dot ◽  
Metal Oxide Semiconductor Capacitor

Carrier transport vis-a-vis leakage current in GaAs MOS capacitors with various structures; quantum dot embedded devices show the lowest leakage.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design

2021 ◽  
Vol 21 (8) ◽  
pp. 4230-4234
Author(s):  
Jun Hyeok Kim ◽  
Su Min Lee ◽  
Chan Ho Park
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Measurement Data ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling Methodology ◽  
Trap Assisted Tunneling ◽  
Protection Circuit ◽  
Current Characteristics ◽  
Static Discharge

A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.

scholarly journals Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 720
Author(s):  
He Guan ◽  
Shaoxi Wang
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Schottky Emission ◽  
Oxide Semiconductor ◽  
Optimized Design ◽  
Mos Capacitors ◽  
Leakage Mechanism ◽  
High K

Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler–Nordheim tunneling became the main leakage mechanism at high fields with reverse biased condition. The sample with HfO2 (4 m)/Al2O3 (8 nm) laminated dielectric shows a high barrier height ϕB of 1.66 eV at 30 °C which was extracted from the Schottky emission mechanism, and this can be explained by fewer In–O and As–O states on the interface, as detected by the X-ray photoelectron spectroscopy test. These effects result in HfO2 (4 m)/Al2O3 (8 nm)/n-InAlAs MOS-capacitors presenting a low leakage current density of below 1.8 × 10−7 A/cm2 from −3 to 0 V at 30 °C. It is demonstrated that the HfO2/Al2O3 laminated dielectric with a thicker Al2O3 film of 8 nm is an optimized design to be the high-k dielectric used in Au-Pt-Ti/HfO2-Al2O3/InAlAs MOS capacitor applications.

scholarly journals Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3443
Author(s):  
Jinyu Lu ◽  
Gang He ◽  
Jin Yan ◽  
Zhenxiang Dai ◽  
Ganhong Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Layer Deposition

In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

scholarly journals Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 130 ◽  
Author(s):  
Lu Zhou ◽  
Xuefeng Chu ◽  
Yaodan Chi ◽  
Xiaotian Yang
Keyword(s):  
Electron Microscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gaas Surface ◽  
Maximum Enhancement ◽  
Mos Capacitors ◽  
X Ray ◽  
Good Surface ◽  
Passivation Time ◽  
Metal Oxide Semiconductor Capacitor

In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.

Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

2007 ◽  
Vol 556-557 ◽  
pp. 643-646 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Kuan Yew Cheong ◽  
Da Il Eom ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors

We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

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