scholarly journals Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17832-17840 ◽  
Author(s):  
Amiya Banerjee ◽  
K. V. L. V. Narayanachari ◽  
Srinivasan Raghavan
Keyword(s):  
Compressive Stress ◽  
Grain Growth ◽  
Tensile Strain ◽  
Texture Evolution ◽  
In Situ Stress ◽  
Si Films

Annealing leads to grain growth and associated tensile strain in YSZ film, so initial compressive stress helps to grow larger grains.

Texture Evolution in Cu Films and Lines

2007 ◽  
Vol 990 ◽  
Author(s):  
Chia-Jeng Chung ◽  
David Field ◽  
No-Jin Park ◽  
Christy Woo
Keyword(s):  
Grain Growth ◽  
Strain Energy ◽  
Texture Evolution ◽  
Growth Conditions ◽  
Geometric Constraints ◽  
In Situ Observation ◽  
Processing Conditions ◽  
Cu Films ◽  
Unique Character

ABSTRACTGrain growth in polycrystalline films is controlled by the energetics of the surface, interface and grain boundaries as well as strain energy. The unique character of damascene lines fabricated from electroplated Cu films introduces the additional considerations of bath chemistry and geometric constraints. The moderate stacking fault energy of Cu allows for the development of a substantial twin fraction for certain growth conditions. This paper discusses in-situ observation of grain growth in Cu films and lines under various processing conditions. It is shown that for thicker films and for structures constrained within damascene trenches the energetics of twin boundary formation play a large role in texture development of these structures.

Lateral grain growth in poly-Si films by gas flame high temperature annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
W. F. Qu ◽  
A. Kitagawa ◽  
Y. Masaki ◽  
M. Suzuki
Keyword(s):  
High Temperature ◽  
Tensile Stress ◽  
Compressive Stress ◽  
Grain Growth ◽  
Strain Energy ◽  
Driving Forces ◽  
Stress Distributions ◽  
High Temperature Annealing ◽  
Gas Flame ◽  
Si Films

AbstractPoly-Si films with the preferential orientation to a random, a (100) and a (110) texture were annealed using a flat gas flame. Remarkable lateral grain growth of (111) grains was observed for poly-Si films with a random and a (110) texture, while in (100) texture films the growth of (100) grains predominated over other grains. There existed tensile stress in as-prepared films. Grains with different orientation were under a different tensile stresses, and such stress distributions on the orientation of grains were different for different textures. The tensile stress was found to become larger in grown grains after high temperature annealing, while the stress on shrunken grains decreased or turned to compressive stress after annealing. These results indicate that strain energy stored in grains is one of the important driving forces in secondary grain growth.

Observation of Grain Growth in Cu Films by In-Situ EBSD Analysis

2003 ◽  
Vol 766 ◽  
Author(s):  
D.P. Field ◽  
M.M. Nowell ◽  
O.V. Kononenko
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Crystallographic Texture ◽  
Texture Evolution ◽  
Tantalum Nitride ◽  
Cu Films ◽  
Orientation Imaging ◽  
Film Characteristics ◽  
Beam Deposition

AbstractRecrystallization, grain growth and crystallographic texture evolution in Cu films is an area of importance for IC interconnect fabrication as the film characteristics influence the resulting line microstructure. This study examines Cu films deposited by partially ionized beam deposition onto a sublayer of tantalum nitride and additionally onto alpha- C:H. The films were annealed in-situ in the SEM chamber and intermittent orientation imaging was used to characterize the grain growth and crystallographic texture evolution in the films. Both initial and final textures are weak in each of the films analyzed, but are a function of sublayer material and thickness. Grain size in the Cu films is significantly smaller for the tantalum nitride sublayer than for the á-C:H sublayer.

Real time in-situ stress evolution investigation of highly textured electrodeposited bismuth thin films

2003 ◽  
Vol 781 ◽  
Author(s):  
Donglei Fan ◽  
Frank Q. Zhu ◽  
Ingrid X. Shao ◽  
P. C. Searson ◽  
R. C. Cammarata
Keyword(s):  
Real Time ◽  
Compressive Stress ◽  
Film Growth ◽  
Stress Measurement ◽  
Mean Free Path ◽  
In Situ Stress ◽  
Stress Generation ◽  
In Situ Stress Measurement ◽  
Bismuth Films

AbstractBismuth, a semi-metal with very long mean free path and large magnetoresistance (MR) effect, is a novel candidate material for thin film spintronic devices. Electrochemical deposition followed by a post-deposition anneal has resulted in highly textured bismuth films as characterized by x-ray diffractometry and pole figure measurements. A highly sensitive, real time in-situ stress measurement system was designed and employed to study stress generation during bismuth film growth. Bismuth films displayed a monotonically increasing compressive stress during deposition. The magnitude of the compressive stress decreased with the deposition rate in the range 1.5 Å/sec to 50 Å/sec.

Texture Evolution of Magnesium Single Crystals Deformed by High-Pressure Torsion

2008 ◽  
Vol 584-586 ◽  
pp. 263-268 ◽  
Author(s):  
Bartlomiej J. Bonarski ◽  
Erhard Schafler ◽  
Borys Mikułowski ◽  
Michael Zehetbauer
Keyword(s):  
High Pressure ◽  
Single Crystals ◽  
Room Temperature ◽  
High Pressure Torsion ◽  
Texture Evolution ◽  
In Situ Stress ◽  
Higher Symmetry ◽  
Strain Measurements ◽  
X Ray

Single crystals of technical purity Magnesium (99.8 wt.%) of initial orientations [ ] 2 1 10 and [ ] 2 2 11 were subjected to HPT deformation at room temperature up to strains of 10. The microstructural evolution has been analyzed by X-ray microtexture investigations and by in-situ stress-strain measurements. The results can be described in terms of shear arising from HPT deformation and - with higher strains - in terms of recrystallization. In crystals with hard orientation[ ] 2 2 11 , these features occur at smaller strains than in crystals with soft orientation [ ] 2 1 10 , i.e. with higher symmetry. In general, the observed textures and strength variations are much stronger than those reported for fcc HPT deformed metals.

In Situ Observation on the Influence of ß Grain Growth on Texture Evolution during Phase Transformation in Ti-6A-4V

2011 ◽  
Vol 702-703 ◽  
pp. 854-857
Author(s):  
Gideon C. Obasi ◽  
R.J. Moat ◽  
D. G. Leo Prakash ◽  
W. Kockelmann ◽  
Joao Quinta da Fonseca ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Neutron Diffraction ◽  
Grain Boundary ◽  
Grain Growth ◽  
Texture Evolution ◽  
Α Phase ◽  
Texture Modification ◽  
The Common ◽  
Grain Boundary Pinning

In the present study, in situ phase transformation experiments have been carried out using neutron diffraction to monitor the texture evolution during the α→ß→α phase transformation in Ti-6Al-4V with and without 0.4% yttrium additions. The aim of adding yttrium was to control ß grain growth above the transus ß by grain boundary pinning. In the present case, strengthening of the ß texture, occurring during ß grain coarsening resulted in strengthening of particular ß texture components, which increases the likelihood of α texture modification by selective growth of α variants on the common (110) ß grain boundaries into unoccupied large β grains.

Grain Boundary Migration and Grain Growth Texture Evolution in Zn in a High Magnetic Field

2011 ◽  
Vol 702-703 ◽  
pp. 635-638
Author(s):  
Christoph Günster ◽  
Dmitri A. Molodov ◽  
Günter Gottstein
Keyword(s):  
Magnetic Field ◽  
Grain Boundary ◽  
Grain Growth ◽  
Texture Evolution ◽  
Boundary Migration ◽  
Activation Parameters ◽  
Boundary Plane ◽  
Grain Boundary Migration ◽  
Cold Rolled

The magnetically driven motion of planar symmetrical and asymmetrical <> tilt grain boundaries in high purity (99,995%) zinc bicrystals was measured in-situ by means of a po­la­rization microscopy probe in the temperature range between 330°C and 415°C and the corres­pon­ding migration activation parameters were obtained. The results revealed that grain boundary mobi­lity essentially depends on the misorientation angle and the inclination of the boundary plane. The magnetic annealing of the cold rolled (90%) Zn-1.1%Al sheet specimens resulted in an asymmetry of the two major texture components. This effect is attributed to a magnetic driving force for grain growth. The grain microstructure evolution was also essentially affected by a magnetic field.

Dopant Diffusion and Grain Growth in Arsenic-Implanted Poly-Si

1987 ◽  
Vol 106 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Amorphous Layer ◽  
Crystal Nucleation ◽  
Initial Size ◽  
Diffusion Behavior ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Si Films

ABSTRACTThe diffusion behavior of arsenic and the grain growth of Si in arsenic doped poly-Si were investigated by MeV4 He2+ backscattering techniques and transmission electron microscopy. By implanting arsenic ions into poly-Si films the surface portion was made amorphous and crystallized upon annealing. In-situ mssurements showed crystal nucleation and growth at temperatures of 650 – 700° C with a dimension comparable to the thickness of the amorphous layer. Annealing at temperatures up to 850°C increased the number of the large grains, but the average grain size did not change significantly. In the unimplanted region grains retained their initial size until 885°C, although implanted arsenic was found to diffuse into this region along grain boundaries. At 885°C penetration of arsenic into the interior of grains caused significant grain growth. We also found that single implants of boron somewhat increased grain size, whereas boron codoped with arsenic appeared to reduce the effect of arsenic doping. These observations support the hypothesis that the enhanced growth rate and the electrical activity of Si near the grain boundary are closely interrelated.

Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates

1993 ◽  
Vol 173 (1-2) ◽  
pp. 377-380 ◽  
Author(s):  
J.P Guillemet ◽  
B de Mauduit ◽  
B Pieraggi ◽  
D Bielle-Daspet ◽  
E Scheid
Keyword(s):  
Grain Growth ◽  
Growth Rates ◽  
In Situ Tem ◽  
Si Films
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