Surface species during ALD of platinum observed with in situ reflection IR spectroscopy

2018 ◽  
Vol 20 (39) ◽  
pp. 25343-25356 ◽  
Author(s):  
Michiel Van Daele ◽  
Christophe Detavernier ◽  
Jolien Dendooven
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Ir Spectroscopy ◽  
Atomic Layer Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Atomic Layer ◽  
Surface Species ◽  
Layer Deposition ◽  
Substrate Temperatures

Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the precursor and O2 gas or O2 plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

scholarly journals Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy

2020 ◽  
Vol 22 (17) ◽  
pp. 9262-9271
Author(s):  
Sofie S. T. Vandenbroucke ◽  
Elisabeth Levrau ◽  
Matthias M. Minjauw ◽  
Michiel Van Daele ◽  
Eduardo Solano ◽  
...  
Keyword(s):  
Ir Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Surface Species ◽  
X Ray ◽  
Layer Deposition ◽  
In Situ Ir ◽  
Titanium Oxide Films ◽  
In Situ Ir Spectroscopy

By the powerful combination of in situ FTIR and in vacuo XPS, the surface species during ALD of TDMAT with different reactants could be identified.

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