In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces
2017 ◽
Vol 422
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pp. 666-674
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2014 ◽
Vol 118
(11)
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pp. 5862-5871
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pp. 031513
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pp. 4943-4949
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2016 ◽
Vol 28
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pp. 5864-5871
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