In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces

2014 ◽  
Vol 105 (12) ◽  
pp. 121604 ◽  
Author(s):  
Liwang Ye ◽  
Theodosia Gougousi
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Spectroscopy Study ◽  
Layer Deposition ◽  
Self Cleaning ◽  
In Situ Infrared Spectroscopy

Atomic Layer Deposition of Ru/RuO2Thin Films Studied by In situ Infrared Spectroscopy

2010 ◽  
Vol 22 (17) ◽  
pp. 4867-4878 ◽  
Author(s):  
S. K. Park ◽  
R. Kanjolia ◽  
J. Anthis ◽  
R. Odedra ◽  
N. Boag ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
In Situ Infrared Spectroscopy

Atomic Layer Deposition of Cobalt Silicide Thin Films Studied by in Situ Infrared Spectroscopy

2015 ◽  
Vol 27 (14) ◽  
pp. 4943-4949 ◽  
Author(s):  
Karla Bernal-Ramos ◽  
Mark J. Saly ◽  
Ravindra K. Kanjolia ◽  
Yves J. Chabal
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Cobalt Silicide ◽  
Layer Deposition ◽  
In Situ Infrared Spectroscopy

Surface species during ALD of platinum observed with in situ reflection IR spectroscopy

2018 ◽  
Vol 20 (39) ◽  
pp. 25343-25356 ◽  
Author(s):  
Michiel Van Daele ◽  
Christophe Detavernier ◽  
Jolien Dendooven
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Ir Spectroscopy ◽  
Atomic Layer Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Atomic Layer ◽  
Surface Species ◽  
Layer Deposition ◽  
Substrate Temperatures

Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the precursor and O2 gas or O2 plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

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