Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors

2018 ◽  
Vol 6 (27) ◽  
pp. 7367-7376 ◽  
Author(s):  
Il-Kwon Oh ◽  
Bo-Eun Park ◽  
Seunggi Seo ◽  
Byung Chul Yeo ◽  
Jukka Tanskanen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Film Growth ◽  
Surface Reactions ◽  
Experimental Studies ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Metal Halide

Theoretical and experimental studies were performed on surface reactions during film growth and electrical properties of HfO2 using two different Hf precursors, HfCl4 and Hf(N(CH3)2)4.

Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene

2020 ◽  
Vol 8 (4) ◽  
pp. 1344-1352 ◽  
Author(s):  
Sungmin Park ◽  
Bo-Eun Park ◽  
Hwi Yoon ◽  
Sanghun Lee ◽  
Taewook Nam ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Experimental Studies ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Ligand Structure ◽  
Layer Deposition

Theoretical and experimental studies were investigated on the growth characteristics and electrical properties of HfO2 films using Hf(N(CH3)2)4 and CpHf(N(CH3)2)3.

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