Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor

2020 ◽  
Author(s):  
Yujin Lee ◽  
Seunggi Seo ◽  
Taewook Nam ◽  
Hyunho Lee ◽  
Hwi Yoon ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Atomic Layer ◽  
Growth Characteristics

Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors

2018 ◽  
Vol 6 (27) ◽  
pp. 7367-7376 ◽  
Author(s):  
Il-Kwon Oh ◽  
Bo-Eun Park ◽  
Seunggi Seo ◽  
Byung Chul Yeo ◽  
Jukka Tanskanen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Film Growth ◽  
Surface Reactions ◽  
Experimental Studies ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Metal Halide

Theoretical and experimental studies were performed on surface reactions during film growth and electrical properties of HfO2 using two different Hf precursors, HfCl4 and Hf(N(CH3)2)4.

Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene

2020 ◽  
Vol 8 (4) ◽  
pp. 1344-1352 ◽  
Author(s):  
Sungmin Park ◽  
Bo-Eun Park ◽  
Hwi Yoon ◽  
Sanghun Lee ◽  
Taewook Nam ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Experimental Studies ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Ligand Structure ◽  
Layer Deposition

Theoretical and experimental studies were investigated on the growth characteristics and electrical properties of HfO2 films using Hf(N(CH3)2)4 and CpHf(N(CH3)2)3.

Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

2005 ◽  
Vol 474 (1-2) ◽  
pp. 222-229 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. García ◽  
J. Barbolla ◽  
K. Kukli ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
High Permittivity

scholarly journals A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14733-14745 ◽  
Author(s):  
Juan Gao ◽  
Gang He ◽  
Lin Hao ◽  
Die Wang ◽  
Lin Zhao
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Interface Chemistry ◽  
Si Substrates ◽  
Layer Deposition ◽  
Stoichiometric Ratios

Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.

Sign in / Sign up

Export Citation Format

Share Document