Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene

2020 ◽  
Vol 8 (4) ◽  
pp. 1344-1352 ◽  
Author(s):  
Sungmin Park ◽  
Bo-Eun Park ◽  
Hwi Yoon ◽  
Sanghun Lee ◽  
Taewook Nam ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Experimental Studies ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Ligand Structure ◽  
Layer Deposition

Theoretical and experimental studies were investigated on the growth characteristics and electrical properties of HfO2 films using Hf(N(CH3)2)4 and CpHf(N(CH3)2)3.

Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors

2018 ◽  
Vol 6 (27) ◽  
pp. 7367-7376 ◽  
Author(s):  
Il-Kwon Oh ◽  
Bo-Eun Park ◽  
Seunggi Seo ◽  
Byung Chul Yeo ◽  
Jukka Tanskanen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Film Growth ◽  
Surface Reactions ◽  
Experimental Studies ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Metal Halide

Theoretical and experimental studies were performed on surface reactions during film growth and electrical properties of HfO2 using two different Hf precursors, HfCl4 and Hf(N(CH3)2)4.

scholarly journals A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14733-14745 ◽  
Author(s):  
Juan Gao ◽  
Gang He ◽  
Lin Hao ◽  
Die Wang ◽  
Lin Zhao
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Comparative Study ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Interface Chemistry ◽  
Si Substrates ◽  
Layer Deposition ◽  
Stoichiometric Ratios

Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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