Dependence of water adsorption on the surface structure of silicon wafers aged under different environmental conditions

2019 ◽  
Vol 21 (47) ◽  
pp. 26041-26048 ◽  
Author(s):  
Lei Chen ◽  
Dien Ngo ◽  
Jiawei Luo ◽  
Yunfei Gong ◽  
Chen Xiao ◽  
...  
Keyword(s):  
Surface Structure ◽  
Oxide Layer ◽  
Environmental Conditions ◽  
Water Adsorption ◽  
Physical Structure ◽  
Silicon Wafers ◽  
Surface Wettability ◽  
Physisorbed Water

The structure and isotherm thickness of physisorbed water on a Si/SiOx surface depend on surface wettability and the physical structure of the oxide layer.

scholarly journals Physical Structure Induced Hydrophobicity Analyzed from Electrospinning and Coating Polyvinyl Butyral Films

2019 ◽  
Vol 2019 ◽  
pp. 1-5 ◽  
Author(s):  
Shuo Chen ◽  
Guo-Sai Liu ◽  
Hong-Wei He ◽  
Cheng-Feng Zhou ◽  
Xu Yan ◽  
...  
Keyword(s):  
Surface Structure ◽  
Critical Role ◽  
Film Surface ◽  
Polyvinyl Butyral ◽  
Physical Structure ◽  
Surface Wettability ◽  
Practical Applications ◽  
Physical Surface ◽  
Film Forming ◽  
Surface Morphologies

Surface wettability of a film plays a critical role in its practical applications. To control the surface wettability, modification on the physical surface structures has been a useful method. In this paper, we reported the controlling physical surface structure of polyvinyl butyral (PVB) films by different film-forming methods, spin-coating, bar-coating, and electrospinning. The wettability of these PVB films was examined, and the surface morphologies and roughness were investigated. The results indicated that coating PVB films were hydrophilic, while electrospun films were hydrophobic. The physical surface structure was the key role on the interesting transition of their surface wettability. Theoretical analyses on these results found that the coating PVB films showed different mechanism with electrospun ones. These results may help to find the way to control the PVB film surface wettability and then guide for applications.

Surface structure and water adsorption behavior of waxy /amylose extender (wx/ae ) double-mutant rice starch

2017 ◽  
Vol 69 (11-12) ◽  
pp. 1600374 ◽  
Author(s):  
Hiroki Takagi ◽  
Shiho Suzuki ◽  
Guray Akdogan ◽  
Shinichi Kitamura
Keyword(s):  
Surface Structure ◽  
Double Mutant ◽  
Water Adsorption ◽  
Adsorption Behavior ◽  
Rice Starch

Water Adsorption in Interfacial Silane Layers by Neutron Reflection: 2. Epoxy + Silane Finish on Silicon Wafers

1999 ◽  
Vol 69 (1-2) ◽  
pp. 139-163 ◽  
Author(s):  
M. S. Kent ◽  
W. F. McNamara ◽  
P. M. Baca ◽  
W. Wright ◽  
L. A. Domeier ◽  
...  
Keyword(s):  
Water Adsorption ◽  
Silicon Wafers ◽  
Neutron Reflection

Design of Thin Films Removal on Solar-Cells Silicon-Wafers Surface

2011 ◽  
Vol 121-126 ◽  
pp. 805-809
Author(s):  
P.S Pa
Keyword(s):  
Solar Cells ◽  
Feed Rate ◽  
Removal Rate ◽  
Low Cost ◽  
Strong Acid ◽  
Physical Structure ◽  
Current Approach ◽  
Silicon Wafers ◽  
Machining Performance ◽  
Si3n4 Layer

In this study, the design of the mechanism of a recycling system using composite electrochemical and chemical machining for removing the surface layers from silicon wafers of solar cells is studied. The reason for constructing a new engineering technology and developing a clean production approach to perform the removal of surface thin film layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution. The goal of the development is to replace the current approach, which uses strong acid and grinding and may cause damage to the physical structure of silicon wafers and cause pollution to the environment, to efficiently meet the requirements of industry for low cost. It can not only perform highly efficient recycling of silicon wafers from discarded solar cells to facilitate the following remelting and crystal pulling process, but can also recycle defective silicon wafers during the fabrication process of solar cells for rework. A small gap width between cathode and workpiece, higher temperature, higher concentration, or higher flow rate of machining fluid corresponds to a higher removal rate for Si3N4 layer and epoxy film. Pulsed direct current can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of workpiece, but raises the current rating. A higher feed rate of silicon wafers of solar cells combine with enough electric power produces fast machining performance. The electrochemical and chemical machining just needs quite short time to make the Si3N4 layer and epoxy film remove easily and cleanly. An effective and low-cost recycle process for silicon wafers of solar cells is presented.

scholarly journals A Reuse Evaluation for Solar-Cell Silicon Wafers via Shift Revolution and Tool Rotation Using Magnetic Assistance in Ultrasonic Electrochemical Micromachining

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
P. S. Pa
Keyword(s):  
Solar Cells ◽  
Strong Acid ◽  
Physical Structure ◽  
Current Approach ◽  
Silicon Wafers ◽  
Electrochemical Micromachining ◽  
Revolution Speed ◽  
Short Period ◽  
High Feed ◽  
High Rotation Speed

A new reuse fabrication using a tool module with rotation and revolution through a process of magnetic assistance in ultrasonic electrochemical micromachining (UEMM) for removal of the surface layers from silicon wafers of solar cells is demonstrated. The target of the proposed reuse fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach to removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. The high revolution speed of the shift with the high rotation speed of the designed tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. High frequency and high power of ultrasonic with large electrolyte flow rate and high magnetic strengths with a small distance between the two magnets provide a large discharge effect and good removal; only a short period of time is required to remove the epoxy film and Si3N4layer easily and cleanly.

Assessing Quality of Life Across Mexico City Using Socio-Economic and Environmental Factors

2020 ◽  
Vol 11 (3) ◽  
pp. 68-86
Author(s):  
Gustavo Alberto Ovando Montejo ◽  
Amy E. Frazier
Keyword(s):  
Quality Of Life ◽  
Environmental Factors ◽  
Mexico City ◽  
Spatial Patterns ◽  
Environmental Conditions ◽  
Physical Structure ◽  
Urban Quality Of Life ◽  
Quality Of Life Index ◽  
The City

Urban quality of life studies increasingly incorporate both socio-economic and environmental factors into their analyses, yet few studies have explored how the socio-economic factors relate to the environmental conditions or how to statistically describe the spatial patterns of quality of life as they relate to the socio-economic and environmental structure of a city. This paper evaluates a quality of life index for Mexico City that takes into account both social and environmental factors through a factor analysis and explores the relationship between the contributing environmental and social factors through a regression analysis. The spatial patterns of quality of life across the city are then examined using a geographic clustering technique. Results indicate that both socio-economic and environmental segregation characterize the physical structure of Mexico City and suggest that the peripheral areas of the city suffer from poor socio-economic conditions even though they have positive environmental conditions.

Formation of SIMOX (separation by implantation of oxygen) layers by MeV implantation

1991 ◽  
Vol 69 (3-4) ◽  
pp. 307-310 ◽  
Author(s):  
K. Touhouche ◽  
Y. Tao ◽  
A. Yelon
Keyword(s):  
Oxide Layer ◽  
Silicon Film ◽  
Silicon Layer ◽  
Silicon Wafers ◽  
Crystal Quality ◽  
Oxide Growth ◽  
Oxygen Ions ◽  
Thermodynamic Aspect ◽  
Buried Layer

Silicon wafers were implanted with 6 MeV oxygen ions. A 0.8 μm amorphous buried layer was formed at ≈4.0 μm from the surface. The top silicon layer remained monocrystalline, but with some damage. Upon annealing at 1300 °C for 6 h, a 0.2 μm nearly stoichiometric oxide layer is formed for specimens implanted with 8 × 1017 O2+ cm−2, thus confirming the thermodynamic aspect of oxide growth in SIMOX (separation by implantation of oxygen) structures. The annealing restores the crystal quality of the top silicon film up to 3.5 μm, but on both sides of the buried oxide layer, bands with a high density of twins are formed.

A fog-collecting surface mimicking the Namib beetle: its water collection efficiency and influencing factors

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 6921-6936 ◽  
Author(s):  
Jun Lei ◽  
Zhiguang Guo
Keyword(s):  
Surface Structure ◽  
Influencing Factors ◽  
Collection Efficiency ◽  
Surface Wettability ◽  
Namib Desert ◽  
Surface Distribution ◽  
Collection Rate ◽  
Water Collection

In the Namib Desert, beetles can obtain water by fog-basking. In this review, we discussed the water collection rate of surfaces inspired by beetles from three aspects: surface wettability, surface structure and surface distribution.

Evolution of Buried Oxide “Pipe” Defects Upon Implantation Through Particles in Simox Material

1991 ◽  
Vol 235 ◽  
Author(s):  
M. K. El-Ghor ◽  
K. A. Joyner ◽  
H. H. Hosack
Keyword(s):  
Oxide Layer ◽  
High Energy ◽  
Silicon Wafers ◽  
High Dose ◽  
Buried Oxide ◽  
Oxide Particles ◽  
High Dose Implantation

ABSTRACTWe have investigated the effect of the presence of oxide particles on the surface of silicon wafers during high energy, high dose implantation of oxygen into silicon. It was found that for single implants with doses of 1.5 × 1018/cm2 or 1.8 × 1018/cm2, such particles produce a non-continuous buried oxide layer in the as-implanted condition as well as after annealing. Etching results showed that no defects, which formed etchable paths through the buried oxide, were produced for particles with diameters 0.43 um or below for the lower dose and 0.53 um for the higher dose.

scholarly journals The Fabrication and Preservation of Nanostructures on Silicon Wafers With a Native Oxide Layer

Scanning ◽  
2012 ◽  
Vol 34 (5) ◽  
pp. 347-356 ◽  
Author(s):  
Jen-Ching Huang ◽  
Jui-Yang Wang
Keyword(s):  
Oxide Layer ◽  
Silicon Wafers ◽  
Native Oxide ◽  
Native Oxide Layer
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