Evolution of Buried Oxide “Pipe” Defects Upon Implantation Through Particles in Simox Material

1991 ◽  
Vol 235 ◽  
Author(s):  
M. K. El-Ghor ◽  
K. A. Joyner ◽  
H. H. Hosack
Keyword(s):  
Oxide Layer ◽  
High Energy ◽  
Silicon Wafers ◽  
High Dose ◽  
Buried Oxide ◽  
Oxide Particles ◽  
High Dose Implantation

ABSTRACTWe have investigated the effect of the presence of oxide particles on the surface of silicon wafers during high energy, high dose implantation of oxygen into silicon. It was found that for single implants with doses of 1.5 × 1018/cm2 or 1.8 × 1018/cm2, such particles produce a non-continuous buried oxide layer in the as-implanted condition as well as after annealing. Etching results showed that no defects, which formed etchable paths through the buried oxide, were produced for particles with diameters 0.43 um or below for the lower dose and 0.53 um for the higher dose.

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation

1987 ◽  
Vol 30 (1-4) ◽  
pp. 390-396 ◽  
Author(s):  
R.J. Chater ◽  
J.A. Kilner ◽  
E. Scheid ◽  
S. Cristoloveneau ◽  
P.L.F. Hemment ◽  
...  
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Buried Oxide ◽  
High Dose Implantation

A New Application of Rbs-Pixe with High Energy Microbeam

1986 ◽  
Vol 69 ◽  
Author(s):  
B. Raicu ◽  
H. Bakhru ◽  
S. Fesseha ◽  
W. M. Gibson
Keyword(s):  
Ion Implantation ◽  
Transport System ◽  
High Energy ◽  
Silicon Wafers ◽  
High Dose ◽  
Furnace Annealing ◽  
Pixe Analysis ◽  
X Ray ◽  
Technological Factors ◽  
Beam Sputtering

AbstractA beam of 2 MeV He+ ions with a diameter of 2 microns was used to perform Rutherford backscattering (RBS) and particle induced x-ray emission (PIXE) analysis on large residual defects formed by high dose arsenic (As) ion implantation and furnace annealing. Research results concerning contamination in implanted silicon wafers generated by primary beam sputtering, inadequate wafer transport system, and other technological factors are presented.

Defect levels in n-silicon after high energy and high dose implantation of proton

1996 ◽  
Vol 36 (1-3) ◽  
pp. 81-84 ◽  
Author(s):  
J.F. Barbot ◽  
C. Blanchard ◽  
E. Ntsoenzok ◽  
J. Vernois
Keyword(s):  
High Energy ◽  
High Dose ◽  
Defect Levels ◽  
High Dose Implantation

High Resolution Electron Microscopy of Defects in High-Dose Oxygen Implanted Silicon-On-Insulator Material

1990 ◽  
Vol 183 ◽  
Author(s):  
S. Visitserngtrakul ◽  
C. O. Jung ◽  
B. F. Cordts ◽  
P. Roitman ◽  
S. J. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Wafer Temperature ◽  
Buried Oxide ◽  
Resolution Electron

AbstractHigh resolution electron microscopy (HREM) has been used to study the atomic arrangement of defects formed during high-dose oxygen implantation of silicon-on-insulator material. The effect of implantation parameters of wafer temperature, dose, and current density were investigated. Wafer temperature had the largest effect on the type and character of the defects. Above the buried oxide layer in the top silicon layer, HREM revealed that microtwins and stacking faults were created during implantation from 350–450°C. From 450–550°C, stacking faults were longer and microtwinning was reduced. From 550–700°C, a new type of defect was observed which had lengths of 40 to 140 nm and consisted of several discontinuous stacking faults which were randomly spaced and separated by two to eight atomic layers. We have referred to them as “multiply faulted defects” (MFDs). Beneath the buried oxide layer in the substrate region, the defects observed included stacking faults and ( 113 ) defects. The results indicated that some parts of the ( 1131 defects can assume a cubic diamond structure created through a twin operation across (115) planes. Details of the structure and formation mechanisms of MFDs and other defects will be discussed.

Buried oxide formation in Si by high-dose implantation of oxygen

1987 ◽  
Vol 30 (1-4) ◽  
pp. 383-389 ◽  
Author(s):  
A.H. van Ommen ◽  
M.P.A. Viegers
Keyword(s):  
High Dose ◽  
Oxide Formation ◽  
Buried Oxide ◽  
High Dose Implantation

SIMS, SAM and RBS Study of High Dose Oxygen Implantation into Silicon

1985 ◽  
Vol 48 ◽  
Author(s):  
W. M. Lau ◽  
P. Ratnam ◽  
C. A. T. Salama
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Analytical Techniques ◽  
High Dose ◽  
Oxygen Distribution ◽  
Oxide Structure ◽  
Buried Oxide ◽  
Auger Microscopy ◽  
Secondary Ion ◽  
High Dose Implantation

ABSTRACTSecondary Ion Mass Spectrometry, Scanning Auger Microscopy, and Rutherford Backscattering Spectroscopy have been used to study a buried oxide structure on silicon formed by high dose implantation. All these surface analytical techniques give useful information about the oxygen distribution in the buried oxide structure. The difficulties in these techniques have also been assessed.

scholarly journals New 4H-SiC Metal Semiconductor Field Effect Transistors with Double Symmetric Step Buried Oxide Layer for High Energy Efficiency Applications

2021 ◽  
Author(s):  
Shunwei Zhu ◽  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Yintang Yang
Keyword(s):  
Energy Efficiency ◽  
Electric Field ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Energy ◽  
Power Added Efficiency ◽  
Buried Oxide ◽  
High Energy Efficiency

Abstract A novel 4H-SiC metal semiconductor field effect transistor (MESFET) device with double symmetric step buried oxide layer is proposed and the mechanism is studied through TCAD simulation. The step buried oxide layer is mainly to reduce the current leakage to the substrate and improve drain current. At the same time, the presence of the oxide layer changes the electric field distribution, reduces the electric field concentration phenomenon, and the breakdown voltage is improved. Due to the presence of the step buried oxide layer, the charge distribution of the device is changed, and the frequency characteristics are improved. When the step buried oxide channel is under the optimized parameter condition, compared with the traditional double-recessed structure 4H-SiC MESFET (DR 4H-SiC MESFET), the direct current (DC) characteristics of the new structure are improved, and the breakdown voltage is increased by 14% to reach 183 V. In radio frequency (RF) characteristics, cut-off frequency is 24.4 GHz, an increase of 11.9 %; maximum operating frequency is 63.9 GHz, an increase of 20.3%; the maximum power added efficiency (PAE) in the L-band and S-band reaches 63.5 %, PAE is 23.7 % higher than the DR structure. At the end of this paper, the new structure is verified for high-energy-efficiency, and the results show that the new structure has great potential in high-frequency applications.

Sign in / Sign up

Export Citation Format

Share Document