Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

2019 ◽  
Vol 7 (20) ◽  
pp. 6059-6069 ◽  
Author(s):  
Seung-Bo Ko ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
So-Jung Yoon ◽  
Se-Na Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Bias Stress ◽  
Layer Deposition ◽  
Compositional Effects

Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications.

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

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