A chemisorbed interfacial layer for seeding atomic layer deposition on graphite

The integration of graphene, and more broadly two-dimensional materials, into devices and hybrid materials often requires the deposition of thin films on their usually inert surface. As a result, strategies...

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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Dalton Transactions ◽

10.1039/d1dt01232k ◽

2021 ◽

Author(s):

Yuanyuan Cao ◽

Sha Zhu ◽

Julien Bachmann

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Two Dimensional ◽

Molecular Precursors ◽

Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

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Guidance of growth mode and structural character in organic–inorganic hybrid materials – a comparative study

Dalton Transactions ◽

10.1039/c3dt52391h ◽

2014 ◽

Vol 43 (9) ◽

pp. 3492-3500 ◽

Cited By ~ 16

Author(s):

K. B. Klepper ◽

O. Nilsen ◽

S. Francis ◽

H. Fjellvåg

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Comparative Study ◽

Hybrid Materials ◽

Atomic Layer ◽

Organic Ligands ◽

Film Properties ◽

Inorganic Hybrid ◽

Layer Deposition ◽

Hybrid Thin Films

We investigated the influence of the functionality of organic ligands on film properties in organic–inorganic hybrid thin films deposited by atomic layer deposition.

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Deposition of thin films of organic–inorganic hybrid materials based on aromatic carboxylic acids by atomic layer deposition

Dalton Transactions ◽

10.1039/c0dt00817f ◽

2010 ◽

Vol 39 (48) ◽

pp. 11628 ◽

Cited By ~ 78

Author(s):

Karina Barnholt Klepper ◽

Ola Nilsen ◽

Helmer Fjellvåg

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Carboxylic Acids ◽

Hybrid Materials ◽

Atomic Layer ◽

Inorganic Hybrid ◽

Aromatic Carboxylic Acids ◽

Layer Deposition

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Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition

Applied Physics Letters ◽

10.1063/1.2743749 ◽

2007 ◽

Vol 90 (22) ◽

pp. 222101 ◽

Cited By ~ 6

Author(s):

Inhoe Kim ◽

Seoungwoo Kuk ◽

Seokhoon Kim ◽

Jinwoo Kim ◽

Hyeongtag Jeon ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Thermodynamic Properties ◽

Interfacial Layer ◽

Atomic Layer ◽

Layer Deposition

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Recent Progress in Atomic Layer Deposition of Multifunctional Oxides and Two-Dimensional Transition Metal Dichalcogenides

Journal of Molecular and Engineering Materials ◽

10.1142/s2251237316400104 ◽

2016 ◽

Vol 04 (04) ◽

pp. 1640010 ◽

Cited By ~ 14

Author(s):

Hongfei Liu

Keyword(s):

Thin Films ◽

Transition Metal ◽

Atomic Layer Deposition ◽

Recent Progress ◽

Transition Metal Dichalcogenides ◽

Atomic Layer ◽

Two Dimensional ◽

Layer Deposition ◽

Metal Dichalcogenides ◽

Multifunctional Oxides

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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