scholarly journals Ga2O3 polymorphs: tailoring the epitaxial growth conditions

2020 ◽  
Vol 8 (32) ◽  
pp. 10975-10992 ◽  
Author(s):  
M. Bosi ◽  
P. Mazzolini ◽  
L. Seravalli ◽  
R. Fornari
Keyword(s):  
Epitaxial Growth ◽  
Growth Conditions ◽  
Nucleation And Growth ◽  
Practical Guidelines

We review the nucleation and growth of different Ga2O3 polymorphs with several techniques, giving practical guidelines for their synthesis.

Chemical Vapor Deposition of Beta Silicon Carbide Epilayers Using the Single Source Precursor 1,2-Disilylethane

1992 ◽  
Vol 282 ◽  
Author(s):  
J. D. Parsons ◽  
D. A. Roberts ◽  
J. G. Wu ◽  
A. K. Chadda ◽  
H-S. Chen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Epitaxial Film ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Nucleation And Growth ◽  
Film Properties ◽  
Single Source Precursor ◽  
Cvd Growth

ABSTRACTA β-SiC epitaxial growth process, using 1,2-disilylethane (DES), was developed. DSE was selected because it contains an equal number of C and Si atoms and its reported decomposition characteristics suggest that C and Si could be obtained from it at approximately equal rates. Repeatable nucleation and epitaxial growth conditions, giving complete substrate coverage and controlled growth, were established by atmospheric pressure CVD, in an inverted-vertical reactor. A substrate temperature of 1290± 10°C was found to be optimum for β-SiC epilayer nucleation and growth. The maximum β-SiC epitaxial growth rate obtained was 10μms/hr. Undoped β-SiC epilayers were n-type (n≈1016 cm−3 ). DSE synthesis, CVD growth parameters, SiC deposition characteristics and β-SiC epitaxial film properties are described.

Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe

2002 ◽  
Vol 240 (1-2) ◽  
pp. 124-134 ◽  
Author(s):  
R. Tena-Zaera ◽  
I. Mora-Seró ◽  
C. Martı́nez-Tomás ◽  
V. Muñoz-Sanjosé
Keyword(s):  
Epitaxial Growth ◽  
Numerical Study ◽  
Growth Conditions ◽  
Mocvd Reactor ◽  
Reactor Application

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

scholarly journals Tailoring commensurability of hBN/graphene heterostructures using substrate morphology and epitaxial growth conditions

2019 ◽  
Vol 37 (5) ◽  
pp. 051503 ◽  
Author(s):  
Daniel J. Pennachio ◽  
Chance C. Ornelas-Skarin ◽  
Nathaniel S. Wilson ◽  
Samantha G. Rosenberg ◽  
Kevin M. Daniels ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Conditions

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

2001 ◽  
Vol 16 (3) ◽  
pp. 633-643 ◽  
Author(s):  
H. Högberg ◽  
J. Birch ◽  
M. P. Johansson ◽  
L. Hultman ◽  
U. Jansson
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Growth Conditions ◽  
Growth Behavior ◽  
Transition Metal Carbide ◽  
Structural Quality ◽  
Metal Carbide ◽  
General Observation ◽  
Better Than

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties

1995 ◽  
Vol 24 (11) ◽  
pp. 1525-1530 ◽  
Author(s):  
D. K. Gaskill ◽  
A. E. Wickenden ◽  
K. Doverspike ◽  
B. Tadayon ◽  
L. B. Rowland
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Electron Transport Properties

scholarly journals Recent Progress of Diamond Device toward Power Application

2009 ◽  
Vol 615-617 ◽  
pp. 999-1002 ◽  
Author(s):  
Shinichi Shikata ◽  
Kazuhiro Ikeda ◽  
Ramanujam Kumaresan ◽  
Hitoshi Umezawa ◽  
Natsuo Tatsumi
Keyword(s):  
Epitaxial Growth ◽  
Material Properties ◽  
Recent Progress ◽  
High Current Density ◽  
Short Review ◽  
Growth Conditions ◽  
High Current ◽  
Step Flow ◽  
Power Application ◽  
Very High

Diamond is nominated as a material candidate for future high power device due to its superior material properties and resulting very high FOM. In this paper, our recent progresses and the expected possibilities of diamond for power electronics applications are introduced as short review. Firstly for the epitaxial growth, by adopting step-flow epitaxial growth by off- angle substrate with optimized growth conditions, we have succeeded in reducing these killer defects almost six orders from 106cm-2 to almost 100cm-2 levels. For the substrate, our recently developed technology to fabricate diamond plates from bulk, 12x13mm2 size are available to use, that can avoid fabrication difficulties with small size substrate. Secondly for the device, primitive studies showed possibly for the advantage of diamond such as low reverse leakage current, high temperature and high current density operation.

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